TY - JOUR A1 - Hörmann, Ulrich A1 - Zeiske, Stefan A1 - Park, Soohyung A1 - Schultz, Thorsten A1 - Kickhoefel, Sebastian A1 - Scherf, Ullrich A1 - Blumstengel, Sylke A1 - Koch, Norbert A1 - Neher, Dieter T1 - Direct observation of state-filling at hybrid tin oxide/organic interfaces JF - Applied physics letters N2 - Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blue-shift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor. Published under license by AIP Publishing. Y1 - 2019 U6 - https://doi.org/10.1063/1.5082704 SN - 0003-6951 SN - 1077-3118 VL - 114 IS - 18 PB - American Institute of Physics CY - Melville ER - TY - JOUR A1 - Hofacker, Andreas A1 - Neher, Dieter T1 - Dispersive and steady-state recombination in organic disordered semiconductors JF - Physical review : B, Condensed matter and materials physics N2 - Charge carrier recombination in organic disordered semiconductors is strongly influenced by the thermalization of charge carriers in the density of states (DOS). Measurements of recombination dynamics, conducted under transient or steady-state conditions, can easily be misinterpreted when a detailed understanding of the interplay of thermalization and recombination is missing. To enable adequate measurement analysis, we solve the multiple-trapping problem for recombining charge carriers and analyze it in the transient and steady excitation paradigm for different DOS distributions. We show that recombination rates measured after pulsed excitation are inherently time dependent since recombination gradually slows down as carriers relax in the DOS. When measuring the recombination order after pulsed excitation, this leads to an apparent high-order recombination at short times. As times goes on, the recombination order approaches an asymptotic value. For the Gaussian and the exponential DOS distributions, this asymptotic value equals the recombination order of the equilibrated system under steady excitation. For a more general DOS distribution, the recombination order can also depend on the carrier density, under both transient and steady-state conditions. We conclude that transient experiments can provide rich information about recombination in and out of equilibrium and the underlying DOS occupation provided that consistent modeling of the system is performed. Y1 - 2017 U6 - https://doi.org/10.1103/PhysRevB.96.245204 SN - 2469-9950 SN - 2469-9969 VL - 96 PB - American Physical Society CY - College Park ER - TY - JOUR A1 - Hofacker, Andreas A1 - Neher, Dieter T1 - Dispersive and steady-state recombination in organic disordered semiconductors JF - Physical review : B, Condensed matter and materials physics N2 - Charge carrier recombination in organic disordered semiconductors is strongly influenced by the thermalization of charge carriers in the density of states (DOS). Measurements of recombination dynamics, conducted under transient or steady-state conditions, can easily be misinterpreted when a detailed understanding of the interplay of thermalization and recombination is missing. To enable adequate measurement analysis, we solve the multiple-trapping problem for recombining charge carriers and analyze it in the transient and steady excitation paradigm for different DOS distributions. We show that recombination rates measured after pulsed excitation are inherently time dependent since recombination gradually slows down as carriers relax in the DOS. When measuring the recombination order after pulsed excitation, this leads to an apparent high-order recombination at short times. As times goes on, the recombination order approaches an asymptotic value. For the Gaussian and the exponential DOS distributions, this asymptotic value equals the recombination order of the equilibrated system under steady excitation. For a more general DOS distribution, the recombination order can also depend on the carrier density, under both transient and steady-state conditions. We conclude that transient experiments can provide rich information about recombination in and out of equilibrium and the underlying DOS occupation provided that consistent modeling of the system is performed. Y1 - 2017 U6 - https://doi.org/10.1103/PhysRevB.96.245204 SN - 2469-9950 SN - 2469-9969 VL - 96 SP - 5640 EP - 5649 PB - American Physical Society CY - College Park ER - TY - JOUR A1 - Kurpiers, Jona A1 - Neher, Dieter T1 - Dispersive Non-Geminate Recombination in an Amorphous Polymer: Fullerene Blend JF - Scientific reports N2 - Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer: fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions. Y1 - 2016 U6 - https://doi.org/10.1038/srep26832 SN - 2045-2322 VL - 6 PB - Nature Publ. Group CY - London ER - TY - GEN A1 - Kurpiers, Jona A1 - Neher, Dieter T1 - Dispersive Non-Geminate Recombination in an Amorphous Polymer:Fullerene Blend N2 - Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer:fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions. T3 - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 228 Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-91541 ER - TY - JOUR A1 - Kurpiers, Jona A1 - Neher, Dieter T1 - Dispersive Non-Geminate Recombination in an Amorphous Polymer:Fullerene Blend JF - Scientific reports N2 - Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer:fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions. Y1 - 2016 U6 - https://doi.org/10.1038/srep26832 SN - 2045-2322 VL - 6 PB - Nature Publishing Group CY - London ER - TY - JOUR A1 - Egbe, D. A. M. A1 - Carbonnier, B. A1 - Paul, E. L. A1 - Muhlbacher, D. A1 - Kietzke, Thomas A1 - Birckner, Eckhard A1 - Neher, Dieter A1 - Grummt, U. W. A1 - Pakula, T. T1 - Diyne-containing PPVs : Solid-state properties and comparison of their photophysical and electrochemical properties with those of their Yne-containing counterparts N2 - Diyne-containing poly(p-phenylene-vinylene)s, 4a-d, of general chemical structure-(Ph-C&3bond; C-C&3bond; C-Ph- CH&3bond; CH-Ph-CH&3bond; CH-)(n), obtained through polycondensation reactions of 1,4-bis(4-formyl-2,5-dioctyloxyphenyl)- buta-1,3-diyne (2) with various 2,5-dialkoxy-p-xylylenebis(diethylphosphonates), 3a-d, are the subject of this report. The polymers exhibit great disparity in their degree of polymerization, n, which might be ascribed to side-chain-related differences in reactivity of the reactive species during the polycondensation process and which led to n-dependent absorption (solution and solid state) and emission (solution) behaviors of the polymers. Polarizing optical microscopy and differential scanning calorimetry are employed to probe their thermal behavior. The structure is investigated by means of wide-angle X-ray diffraction for both isotropic and macroscopically oriented samples. Comparison of photophysical (experimental and theoretical) and electrochemical properties of the polymers with those of their yne- containing counterparts 6a-d [-(Ph-C&3bond; C-Ph-CH&3bond; CH-Ph-CH&3bond; CH-)(n)] has been carried out. Similar photophysical behavior was observed for both types of polymers despite the difference in backbone conjugation pattern. The introduction of a second yne unit in 4 lowers the HOMO and LUMO levels, thereby enhancing the electron affinity of polymers 4 compared to polymers 6. The "wider opening" introduced by the second yne unit facilitates moreover the movement of charges during the electrochemical processes leading to minimal discrepancy, Delta E-g between the optical and electrochemical band gap energies. Polymers 6, in contrast, show significant side-chain-dependent Delta E-g values. Low turn-on voltages between 2 and 3 V and maximal luminous efficiencies between 0.32 and 1.25 cd/A were obtained from LED devices of configuration ITO/PEDOT:PSS/polymer 4/Ca/Al Y1 - 2005 SN - 0024-9297 ER - TY - JOUR A1 - Rivnay, Jonathan A1 - Steyrleuthner, Robert A1 - Jimison, Leslie H. A1 - Casadei, Alberto A1 - Chen, Zhihua A1 - Toney, Michael F. A1 - Facchetti, Antonio A1 - Neher, Dieter A1 - Salleo, Alberto T1 - Drastic control of texture in a high performance n-Type polymeric semiconductor and implications for charge transport JF - Macromolecules : a publication of the American Chemical Society N2 - Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer [N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material. Y1 - 2011 U6 - https://doi.org/10.1021/ma200864s SN - 0024-9297 VL - 44 IS - 13 SP - 5246 EP - 5255 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Lu, Guanghao A1 - Di Pietro, Riccardo A1 - Kölln, Lisa Sophie A1 - Nasrallah, Iyad A1 - Zhou, Ling A1 - Mollinger, Sonya A1 - Himmelberger, Scott A1 - Koch, Norbert A1 - Salleo, Alberto A1 - Neher, Dieter T1 - Dual-Characteristic Transistors Based on Semiconducting Polymer Blends JF - Advanced electronic materials N2 - A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec−1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances. KW - charge accumulation KW - crystalline ordering KW - field-effect-transistor KW - semiconducting polymers Y1 - 2016 U6 - https://doi.org/10.1002/aelm.201600267 SN - 2199-160X VL - 2 SP - 2344 EP - 2351 PB - Wiley-Blackwell CY - Hoboken ER - TY - JOUR A1 - Li, Tian-yi A1 - Benduhn, Johannes A1 - Qiao, Zhi A1 - Liu, Yuan A1 - Li, Yue A1 - Shivhare, Rishi A1 - Jaiser, Frank A1 - Wang, Pei A1 - Ma, Jie A1 - Zeika, Olaf A1 - Neher, Dieter A1 - Mannsfeld, Stefan C. B. A1 - Ma, Zaifei A1 - Vandewal, Koen A1 - Leo, Karl T1 - Effect of H- and J-Aggregation on the Photophysical and Voltage Loss of Boron Dipyrromethene Small Molecules in Vacuum-Deposited Organic Solar Cells JF - The journal of physical chemistry letters N2 - An understanding of the factors limiting the open-circuit voltage (V-oc) and related photon energy loss mechanisms is critical to increase the power conversion efficiency (PCE) of small-molecule organic solar cells (OSCs), especially those with near-infrared (NIR) absorbers. In this work, two NIR boron dipyrromethene (BODIPY) molecules are characterized for application in planar (PHJ) and bulk (BHJ) heterojunction OSCs. When two H atoms are substituted by F atoms on the peripheral phenyl rings of the molecules, the molecular aggregation type in the thin film changes from the H-type to J-type. For PHJ devices, the nonradiative voltage loss of 0.35 V in the J-aggregated BODIPY is lower than that of 0.49 V in the H-aggregated device. In BHJ devices with a nonradiative voltage loss of 0.35 V, a PCE of 5.5% is achieved with an external quantum efficiency (EQE) maximum of 68% at 700 nm. Y1 - 2019 U6 - https://doi.org/10.1021/acs.jpclett.9b01222 SN - 1948-7185 VL - 10 IS - 11 SP - 2684 EP - 2691 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Pingel, P. A1 - Schwarzl, R. A1 - Neher, Dieter T1 - Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene) JF - Applied physics letters N2 - Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F(4)TCNQ. We find that the hole density increases linearly with the F(4)TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bassler, Phys. Rev. B 72, 235202 (2005)]. We infer that the presence of ionized F(4)TCNQ molecules in the P3HT layer increases energetic disorder, which diminishes the carrier mobility. Y1 - 2012 U6 - https://doi.org/10.1063/1.3701729 SN - 0003-6951 VL - 100 IS - 14 PB - American Institute of Physics CY - Melville ER - TY - JOUR A1 - Zen, Achmad A1 - Pflaum, J. A1 - Hirschmann, S. A1 - Zhuang, W. A1 - Jaiser, Frank A1 - Asawapirom, Udom A1 - Rabe, J. P. A1 - Scherf, Ullrich A1 - Neher, Dieter T1 - Effect of molecular weight and annealing of poly (3-hexylthiophene)s on the performance of organic field-effect transistors N2 - The optical, structural, and electrical properties of thin layers made from poly(3-hexylthiophene) (P3HT) samples of different molecular weights are presented. As reported in a previous paper by Kline et al., Adv. Mater 2003, 15, 1519, the mobilities of these layers are a strong function of the molecular weight, with the largest mobility found for the largest molecular weight. Atomic force microscopy studies reveal a complex polycrystalline morphology which changes considerably upon annealing. X-ray studies show the occurrence of a layered phase for all P3HT fractions, especially after annealing at 1.50 degreesC . However, there is no clear correlation between the differences in the transport properties and the data from structural investigations. In order to reveal the processes limiting the mobility in these layers, the transistor properties were investigated as a function of temperature. The mobility decreases continuously with increasing temperatures; with the same trend pronounced thermochromic effects of the P3HT films occur. Apparently, the polymer chains adopt a more twisted, disordered conformation at higher temperatures, leading to interchain transport barriers. We conclude that the backbone conformation of the majority of the bulk material rather than the crystallinity of the layer is the most crucial parameter controlling the charge transport in these P3HT layers. This interpretation is supported by the significant blue-shift of the solid-state absorption spectra with decreasing molecular weight, which is indicative of a larger distortion of the P3HT backbone in the low-molecular weight P3HT layers Y1 - 2004 ER - TY - JOUR A1 - Kniepert, Juliane A1 - Lange, Ilja A1 - Heidbrink, Jan A1 - Kurpiers, Jona A1 - Brenner, Thomas J. K. A1 - Koster, L. Jan Anton A1 - Neher, Dieter T1 - Effect of Solvent Additive on Generation, Recombination, and Extraction in PTB7:PCBM Solar Cells: A Conclusive Experimental and Numerical Simulation Study JF - The journal of physical chemistry : C, Nanomaterials and interfaces N2 - Time-delayed collection field (TDCF), bias-assisted charge extraction (BACE), and space charge-limited current (SCLC) measurements are combined with complete numerical device simulations to unveil the effect of the solvent additive 1,8-diiodooctane (DIO) on the performance of PTB7:PCBM bulk heterojunction solar cells. DIO is shown to increase the charge generation rate, reduce geminate and bimolecular recombination, and increase the electron mobility. In total, the reduction of loss currents by processing with the additive raises the power conversion efficiency of the PTB7:PCBM blend by a factor of almost three. The lower generation rates and higher geminate recombination losses in devices without DIO are consistent with a blend morphology comprising large fullerene clusters embedded within a PTB7-rich matrix, while the low electron mobility suggests that these fullerene clusters are themselves composed of smaller pure fullerene aggregates separated by disordered areas. Our device simulations show unambiguously that the effect of the additive on the shape of the currentvoltage curve (J-V) cannot be ascribed to the variation of only the mobility, the recombination, or the field dependence of generation. It is only when the changes of all three parameters are taken into account that the simulation matches the experimental J-V characteristics under all illumination conditions and for a wide range of voltages. Y1 - 2015 U6 - https://doi.org/10.1021/jp512721e SN - 1932-7447 VL - 119 IS - 15 SP - 8310 EP - 8320 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Yuan, Jun A1 - Zhang, Chujun A1 - Qiu, Beibei A1 - Liu, Wei A1 - So, Shu Kong A1 - Mainville, Mathieu A1 - Leclerc, Mario A1 - Shoaee, Safa A1 - Neher, Dieter A1 - Zou, Yingping T1 - Effects of energetic disorder in bulk heterojunction organic solar cells JF - Energy & environmental science N2 - Organic solar cells (OSCs) have progressed rapidly in recent years through the development of novel organic photoactive materials, especially non-fullerene acceptors (NFAs). Consequently, OSCs based on state-of-the-art NFAs have reached significant milestones, such as similar to 19% power conversion efficiencies (PCEs) and small energy losses (less than 0.5 eV). Despite these significant advances, understanding of the interplay between molecular structure and optoelectronic properties lags significantly behind. For example, despite the theoretical framework for describing the energetic disorder being well developed for the case of inorganic semiconductors, the question of the applicability of classical semiconductor theories in analyzing organic semiconductors is still under debate. A general observation in the inorganic field is that inorganic photovoltaic materials possessing a polycrystalline microstructure exhibit suppressed disorder properties and better charge carrier transport compared to their amorphous analogs. Accordingly, this principle extends to the organic semiconductor field as many organic photovoltaic materials are synthesized to pursue polycrystalline-like features. Yet, there appears to be sporadic examples that exhibit an opposite trend. However, full studies decoupling energetic disorder from aggregation effects have largely been left out. Hence, the potential role of the energetic disorder in OSCs has received little attention. Interestingly, recently reported state-of-the-art NFA-based devices could achieve a small energetic disorder and high PCE at the same time; and interest in this investigation related to the disorder properties in OSCs was revived. In this contribution, progress in terms of the correlation between molecular design and energetic disorder is reviewed together with their effects on the optoelectronic mechanism and photovoltaic performance. Finally, the specific challenges and possible solutions in reducing the energetic disorder of OSCs from the viewpoint of materials and devices are proposed. Y1 - 2022 U6 - https://doi.org/10.1039/d2ee00271j SN - 1754-5692 SN - 1754-5706 VL - 15 IS - 7 SP - 2806 EP - 2818 PB - Royal Society of Chemistry CY - Cambridge ER - TY - JOUR A1 - Grischek, Max A1 - Caprioglio, Pietro A1 - Zhang, Jiahuan A1 - Pena-Camargo, Francisco A1 - Sveinbjornsson, Kari A1 - Zu, Fengshuo A1 - Menzel, Dorothee A1 - Warby, Jonathan A1 - Li, Jinzhao A1 - Koch, Norbert A1 - Unger, Eva A1 - Korte, Lars A1 - Neher, Dieter A1 - Stolterfoht, Martin A1 - Albrecht, Steve T1 - Efficiency Potential and Voltage Loss of Inorganic CsPbI2Br Perovskite Solar Cells JF - Solar RRL N2 - Inorganic perovskite solar cells show excellent thermal stability, but the reported power conversion efficiencies are still lower than for organic-inorganic perovskites. This is mainly caused by lower open-circuit voltages (V(OC)s). Herein, the reasons for the low V-OC in inorganic CsPbI2Br perovskite solar cells are investigated. Intensity-dependent photoluminescence measurements for different layer stacks reveal that n-i-p and p-i-n CsPbI2Br solar cells exhibit a strong mismatch between quasi-Fermi level splitting (QFLS) and V-OC. Specifically, the CsPbI2Br p-i-n perovskite solar cell has a QFLS-e center dot V-OC mismatch of 179 meV, compared with 11 meV for a reference cell with an organic-inorganic perovskite of similar bandgap. On the other hand, this study shows that the CsPbI2Br films with a bandgap of 1.9 eV have a very low defect density, resulting in an efficiency potential of 20.3% with a MeO-2PACz hole-transporting layer and 20.8% on compact TiO2. Using ultraviolet photoelectron spectroscopy measurements, energy level misalignment is identified as a possible reason for the QFLS-e center dot V-OC mismatch and strategies for overcoming this V-OC limitation are discussed. This work highlights the need to control the interfacial energetics in inorganic perovskite solar cells, but also gives promise for high efficiencies once this issue is resolved. KW - CsPbI2Br KW - efficiency potentials KW - inorganic perovskites KW - photoluminescence KW - solar cells KW - voltage losses Y1 - 2022 U6 - https://doi.org/10.1002/solr.202200690 SN - 2367-198X VL - 6 IS - 11 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Gehrig, Dominik W. A1 - Roland, Steffen A1 - Howard, Ian A. A1 - Kamm, Valentin A1 - Mangold, Hannah A1 - Neher, Dieter A1 - Laquai, Frederic T1 - Efficiency-limiting processes in low-bandgap polymer:Perylene diimide photovoltaic blends JF - The journal of physical chemistry : C, Nanomaterials and interfaces N2 - The charge generation and recombination processes following photo-excitation of a low-bandgap polymer:perylene diimide photovoltaic blend are investigated by transient absorption pump-probe spectroscopy covering a dynamic range from femto-to microseconds to get insight into the efficiency-limiting photophysical processes. The several tens of picoseconds, and its efficiency is only half of that in a polymer:fullerene photoinduced electron transfer from the polymer to the perylene acceptor takes up to blend. This reduces the short-circuit current. Time-delayed collection field experiments reveal that the subsequent charge separation is strongly field-dependent, limiting the fill factor and lowering the short-circuit current in polymer:PDI devices. Upon excitation of the acceptor in the low-bandgap polymer blend, the PDI exciton undergoes charge transfer on a time scale of several tens of picoseconds. However, a significant fraction of the charges generated at the interface are quickly lost because of fast geminate recombination. This reduces the short-circuit current even further, leading to a scenario in which only around 2596 of the initial photoexcitations generate free charges that can potentially contribute to the photocurrent. In summary, the key photophysical limitations of perylene diimide as an acceptor in low-bandgap polymer blends appear at the interface between the materials, with the kinetics of both charge generation and separation inhibited as compared to that of fullerenes. Y1 - 2014 U6 - https://doi.org/10.1021/jp503366m SN - 1932-7447 VL - 118 IS - 35 SP - 20077 EP - 20085 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Däubler, Thomas Karl A1 - Neher, Dieter A1 - Rost, H. A1 - Hörhold, Hans-Heinrich T1 - Efficient bulk photogeneration of charge carriers in arylamino-PPV polymer sandwich cells Y1 - 1999 ER - TY - JOUR A1 - Vandewal, Koen A1 - Albrecht, Steve A1 - Hoke, Eric T. A1 - Graham, Kenneth R. A1 - Widmer, Johannes A1 - Douglas, Jessica D. A1 - Schubert, Marcel A1 - Mateker, William R. A1 - Bloking, Jason T. A1 - Burkhard, George F. A1 - Sellinger, Alan A1 - Frechet, Jean M. J. A1 - Amassian, Aram A1 - Riede, Moritz K. A1 - McGehee, Michael D. A1 - Neher, Dieter A1 - Salleo, Alberto T1 - Efficient charge generation by relaxed charge-transfer states at organic interfaces JF - Nature materials N2 - carriers on illumination. Efficient organic solar cells require a high yield for this process, combined with a minimum of energy losses. Here, we investigate the role of the lowest energy emissive interfacial charge-transfer state (CT1) in the charge generation process. We measure the quantum yield and the electric field dependence of charge generation on excitation of the charge-transfer (CT) state manifold viaweakly allowed, low-energy optical transitions. For a wide range of photovoltaic devices based on polymer: fullerene, small-molecule:C-60 and polymer: polymer blends, our study reveals that the internal quantum efficiency (IQE) is essentially independent of whether or not D, A or CT states with an energy higher than that of CT1 are excited. The best materials systems show an IQE higher than 90% without the need for excess electronic or vibrational energy. Y1 - 2014 U6 - https://doi.org/10.1038/NMAT3807 SN - 1476-1122 SN - 1476-4660 VL - 13 IS - 1 SP - 63 EP - 68 PB - Nature Publ. Group CY - London ER - TY - JOUR A1 - Bagnich, Sergey A. A1 - Unger, Th. A1 - Jaiser, Frank A1 - Neher, Dieter A1 - Thesen, M. W. A1 - Krüger, H. T1 - Efficient green electrophosphorescence based on ambipolar nonconjugated polymers evaluation of transport and emission properties JF - Journal of applied physics N2 - New materials for polymer organic light-emitting diodes based on a polymer matrix doped with phosphorescent dyes are presented. The matrix system is based on a polystyrene backbone bearing either electron or hole transporting units at the 4-position of each repeat unit. Random copolymers and polymer blend systems of the homopolymers are prepared, both with 62 wt.% electron transporting and 38 wt.% hole transporting moieties. Adding a green electrophosphorescent dye to the polymer matrix leads to efficient electroluminescence with a maximum current efficiency of 35 cd/A and a maximum external quantum efficiency of up to 10%. The mobilities of electrons and holes in the dye-doped copolymer, as measured by transient electroluminescence, are around 5 x 10(-5) and 5 x 10(-6) cm(2)/Vs, respectively, while the blend of the two homopolymers exhibits slightly lower mobilities of both types of carriers. Despite the pronounced imbalance of charge transport, the device performance is almost entirely limited by the phosphorescence efficiency of the dye, implying balanced flow of holes and electrons into the active region. Also, devices made with either the copolymer or the blend yielded very similar device efficiencies, despite the noticeable difference in electron and hole mobility. It is proposed that electrons are efficiently blocked at the interlayer and that the so-formed space charge assists the balanced injection of holes. Y1 - 2011 U6 - https://doi.org/10.1063/1.3618681 SN - 0021-8979 SN - 1089-7550 VL - 110 IS - 3 PB - American Institute of Physics CY - Melville ER - TY - JOUR A1 - Albrecht, Steve A1 - Grootoonk, Bjorn A1 - Neubert, Sebastian A1 - Roland, Steffen A1 - Wordenweber, Jan A1 - Meier, Matthias A1 - Schlatmann, Rutger A1 - Gordijn, Aad A1 - Neher, Dieter T1 - Efficient hybrid inorganic/organic tandem solar cells with tailored recombination contacts JF - Solar energy materials & solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion N2 - In this work, the authors present a 7.5% efficient hybrid tandem solar cell with the bottom cell made of amorphous silicon and a Si-PCPDTBT:PC70BM bulk heterojunction top cell. Loss-free recombination contacts were realized by combing Al-doped ZnO with either the conducting polymer composite PEDOT:PSS or with a bilayer of ultrathin Al and MoO3. Optimization of these contacts results in tandem cells with high fill factors of 70% and an open circuit voltage close to the sum of those of the sub-cells. This is the best efficiency reported for this type of hybrid tandem cell so far. Optical and electrical device modeling suggests that the efficiency can be increased to similar to 12% on combining a donor polymer with suitable absorption onset with PCBM. We also describe proof-of-principle studies employing light trapping in hybrid tandem solar cells, suggesting that this device architecture has the potential to achieve efficiencies well above 12%. (C) 2014 Elsevier B.V. All rights reserved. KW - Hybrid solar cells KW - Tandem solar cells KW - Organic solar cells KW - Bulk heterojunction KW - Efficiency optimization Y1 - 2014 U6 - https://doi.org/10.1016/j.solmat.2014.04.020 SN - 0927-0248 SN - 1879-3398 VL - 127 SP - 157 EP - 162 PB - Elsevier CY - Amsterdam ER -