TY  - JOUR
A1  - Neher, Dieter
A1  - Kniepert, Juliane
A1  - Elimelech, Arik
A1  - Koster, L. Jan Anton
T1  - A New Figure of Merit for Organic Solar Cells with Transport-limited Photocurrents
JF  - Scientific reports
N2  - Compared to their inorganic counterparts, organic semiconductors suffer from relatively low charge carrier mobilities. Therefore, expressions derived for inorganic solar cells to correlate characteristic performance parameters to material properties are prone to fail when applied to organic devices. This is especially true for the classical Shockley-equation commonly used to describe current-voltage (JV)-curves, as it assumes a high electrical conductivity of the charge transporting material. Here, an analytical expression for the JV-curves of organic solar cells is derived based on a previously published analytical model. This expression, bearing a similar functional dependence as the Shockley-equation, delivers a new figure of merit α to express the balance between free charge recombination and extraction in low mobility photoactive materials. This figure of merit is shown to determine critical device parameters such as the apparent series resistance and the fill factor.
KW  - Electronic and spintronic devices
KW  - Semiconductors
Y1  - 2016
U6  - https://doi.org/10.1038/srep24861
SN  - 2045-2322
VL  - 6
PB  - Nature Publishing Group
CY  - London
ER  - 
TY  - GEN
A1  - Neher, Dieter
A1  - Kniepert, Juliane
A1  - Elimelech, Arik
A1  - Koster, L. Jan Anton
T1  - A New Figure of Merit for Organic Solar Cells with Transport-limited Photocurrents
N2  - Compared to their inorganic counterparts, organic semiconductors suffer from relatively low charge carrier mobilities. Therefore, expressions derived for inorganic solar cells to correlate characteristic performance parameters to material properties are prone to fail when applied to organic devices. This is especially true for the classical Shockley-equation commonly used to describe current-voltage (JV)-curves, as it assumes a high electrical conductivity of the charge transporting material. Here, an analytical expression for the JV-curves of organic solar cells is derived based on a previously published analytical model. This expression, bearing a similar functional dependence as the Shockley-equation, delivers a new figure of merit α to express the balance between free charge recombination and extraction in low mobility photoactive materials. This figure of merit is shown to determine critical device parameters such as the apparent series resistance and the fill factor.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 225 
KW  - Electronic and spintronic devices
KW  - Semiconductors
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-91414
ER  - 
TY  - JOUR
A1  - Miedema, Piter Sybren
A1  - Beye, Martin
A1  - Koennecke, R.
A1  - Schiwietz, Gregor
A1  - Föhlisch, Alexander
T1  - Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap
JF  - Journal of electron spectroscopy and related phenomena : the international journal on theoretical and experimental aspects of electron spectroscopy
N2  - The band gap of semiconductors like silicon and silicon carbide (SIC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 x 10(-4) eV/K and a conduction-band slope of -1.334 x 10(-4) eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and nonresonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range. (C) 2014 Elsevier B.V. All rights reserved.
KW  - RIXS
KW  - XAS
KW  - XES
KW  - Semiconductors
KW  - Silicon carbide
Y1  - 2014
U6  - https://doi.org/10.1016/j.elspec.2014.08.003
SN  - 0368-2048
SN  - 1873-2526
VL  - 197
SP  - 37
EP  - 42
PB  - Elsevier
CY  - Amsterdam
ER  -