TY - JOUR A1 - Lu, Guanghao A1 - Blakesley, James C. A1 - Himmelberger, Scott A1 - Pingel, Patrick A1 - Frisch, Johannes A1 - Lieberwirth, Ingo A1 - Salzmann, Ingo A1 - Oehzelt, Martin A1 - Di Pietro, Riccardo A1 - Salleo, Alberto A1 - Koch, Norbert A1 - Neher, Dieter T1 - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors JF - Nature Communications N2 - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60. Y1 - 2013 U6 - https://doi.org/10.1038/ncomms2587 SN - 2041-1723 VL - 4 IS - 1-2 PB - Nature Publ. Group CY - London ER - TY - JOUR A1 - Lu, Guanghao A1 - Di Pietro, Riccardo A1 - Kölln, Lisa Sophie A1 - Nasrallah, Iyad A1 - Zhou, Ling A1 - Mollinger, Sonya A1 - Himmelberger, Scott A1 - Koch, Norbert A1 - Salleo, Alberto A1 - Neher, Dieter T1 - Dual-Characteristic Transistors Based on Semiconducting Polymer Blends JF - Advanced electronic materials N2 - A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec−1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances. KW - charge accumulation KW - crystalline ordering KW - field-effect-transistor KW - semiconducting polymers Y1 - 2016 U6 - https://doi.org/10.1002/aelm.201600267 SN - 2199-160X VL - 2 SP - 2344 EP - 2351 PB - Wiley-Blackwell CY - Hoboken ER - TY - JOUR A1 - Lu, Guanghao A1 - Koch, Norbert A1 - Neher, Dieter T1 - In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret JF - Applied physics letters N2 - Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage V-t of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 degrees C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired V-t can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters. (C) 2015 AIP Publishing LLC. Y1 - 2015 U6 - https://doi.org/10.1063/1.4928554 SN - 0003-6951 SN - 1077-3118 VL - 107 IS - 6 PB - American Institute of Physics CY - Melville ER -