TY  - JOUR
A1  - Pingel, Patrick
A1  - Arvind, Malavika
A1  - Kölln, Lisa
A1  - Steyrleuthner, Robert
A1  - Kraffert, Felix
A1  - Behrends, Jan
A1  - Janietz, Silvia
A1  - Neher, Dieter
T1  - p-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane
JF  - Advanced electronic materials
N2  - State-of-the-art p-type doping of organic semiconductors is usually achieved by employing strong -electron acceptors, a prominent example being tetrafluorotetracyanoquinodimethane (F(4)TCNQ). Here, doping of the semiconducting model polymer poly(3-hexylthiophene), P3HT, using the strong Lewis acid tris(pentafluorophenyl)borane (BCF) as a dopant, is investigated by admittance, conductivity, and electron paramagnetic resonance measurements. The electrical characteristics of BCF- and F(4)TCNQ-doped P3HT layers are shown to be very similar in terms of the mobile hole density and the doping efficiency. Roughly 18% of the employed dopants create mobile holes in either F-4 TCNQ- or BCF-doped P3HT, while the majority of doping-induced holes remain strongly Coulomb-bound to the dopant anions. Despite similar hole densities, conductivity and hole mobility are higher in BCF-doped P3HT layers than in F(4)TCNQ-doped samples. This and the good solubility in many organic solvents render BCF very useful for p-type doping of organic semiconductors.
KW  - charge carrier transport
KW  - charge transfer
KW  - conductivity
KW  - molecular doping
KW  - organic semiconductors
Y1  - 2016
U6  - https://doi.org/10.1002/aelm.201600204
SN  - 2199-160X
VL  - 2
PB  - Wiley-Blackwell
CY  - Hoboken
ER  -