TY  - JOUR
A1  - Lu, Guanghao
A1  - Blakesley, James C.
A1  - Himmelberger, Scott
A1  - Pingel, Patrick
A1  - Frisch, Johannes
A1  - Lieberwirth, Ingo
A1  - Salzmann, Ingo
A1  - Oehzelt, Martin
A1  - Di Pietro, Riccardo
A1  - Salleo, Alberto
A1  - Koch, Norbert
A1  - Neher, Dieter
T1  - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
JF  - Nature Communications
N2  - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
Y1  - 2013
U6  - https://doi.org/10.1038/ncomms2587
SN  - 2041-1723
VL  - 4
IS  - 1-2
PB  - Nature Publ. Group
CY  - London
ER  - 
TY  - JOUR
A1  - Mueller, Lars
A1  - Nanova, Diana
A1  - Glaser, Tobias
A1  - Beck, Sebastian
A1  - Pucci, Annemarie
A1  - Kast, Anne K.
A1  - Schroeder, Rasmus R.
A1  - Mankel, Eric
A1  - Pingel, Patrick
A1  - Neher, Dieter
A1  - Kowalsky, Wolfgang
A1  - Lovrincic, Robert
T1  - Charge-Transfer-Solvent Interaction Predefines Doping Efficiency in p-Doped P3HT Films
JF  - Chemistry of materials : a publication of the American Chemical Society
N2  - Efficient electrical doping of organic semiconductors is a necessary prerequisite for the fabrication of high performance organic electronic devices. In this work, we study p-type doping of poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) spin-cast from two different solvents. Using electron diffraction, we find strong dopant-induced pi-pi-stacking for films from the solvent chloroform, but not from chlorobenzene. This image is confirmed and expanded by the analysis of vibrational features of P3HT and polaron absorptions using optical spectroscopy. Here, a red-shifted polaron absorption is found in doped films from chloroform, caused by a higher conjugation length of the polymer backbone. These differences result in a higher conductivity of films from chloroform. We use optical spectroscopy on the corresponding blend solutions to shed light on the origin of this effect and propose a model to explain why solutions of doped P3HT reveal more aggregation of charged molecules in chlorobenzene, whereas more order is finally observed in dried films from chloroform. Our study emphasizes the importance of solvent parameters exceeding the bare solubility of pure dopant and host material for the preparation of highly conductive doped films.
Y1  - 2016
U6  - https://doi.org/10.1021/acs.chemmater.6b01629
SN  - 0897-4756
SN  - 1520-5002
VL  - 28
SP  - 4432
EP  - 4439
PB  - American Chemical Society
CY  - Washington
ER  -