TY  - JOUR
A1  - Salzmann, Ingo
A1  - Heimel, Georg
A1  - Duhm, Steffen
A1  - Oehzelt, Martin
A1  - Pingel, Patrick
A1  - George, Benjamin M.
A1  - Schnegg, Alexander
A1  - Lips, Klaus
A1  - Blum, Ralf-Peter
A1  - Vollmer, Antje
A1  - Koch, Norbert
T1  - Intermolecular hybridization governs molecular electrical doping
JF  - Physical review letters
N2  - Current models for molecular electrical doping of organic semiconductors are found to be at odds with other well-established concepts in that field, like polaron formation. Addressing these inconsistencies for prototypical systems, we present experimental and theoretical evidence for intermolecular hybridization of organic semiconductor and dopant frontier molecular orbitals. Common doping-related observations are attributed to this phenomenon, and controlling the degree of hybridization emerges as a strategy for overcoming the present limitations in the yield of doping-induced charge carriers.
Y1  - 2012
U6  - https://doi.org/10.1103/PhysRevLett.108.035502
SN  - 0031-9007
VL  - 108
IS  - 3
PB  - American Physical Society
CY  - College Park
ER  - 
TY  - JOUR
A1  - Lu, Guanghao
A1  - Blakesley, James C.
A1  - Himmelberger, Scott
A1  - Pingel, Patrick
A1  - Frisch, Johannes
A1  - Lieberwirth, Ingo
A1  - Salzmann, Ingo
A1  - Oehzelt, Martin
A1  - Di Pietro, Riccardo
A1  - Salleo, Alberto
A1  - Koch, Norbert
A1  - Neher, Dieter
T1  - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
JF  - Nature Communications
N2  - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
Y1  - 2013
U6  - https://doi.org/10.1038/ncomms2587
SN  - 2041-1723
VL  - 4
IS  - 1-2
PB  - Nature Publ. Group
CY  - London
ER  -