TY - JOUR A1 - Raoufi, Meysam A1 - Hörmann, Ulrich A1 - Ligorio, Giovanni A1 - Hildebrandt, Jana A1 - Pätzel, Michael A1 - Schultz, Thorsten A1 - Perdigón-Toro, Lorena A1 - Koch, Norbert A1 - List-Kratochvil, Emil A1 - Hecht, Stefan A1 - Neher, Dieter T1 - Simultaneous effect of ultraviolet radiation and surface modification on the work function and hole injection properties of ZnO thin films JF - Physica Status Solidi. A , Applications and materials science N2 - The combined effect of ultraviolet (UV) light soaking and self-assembled monolayer deposition on the work function (WF) of thin ZnO layers and on the efficiency of hole injection into the prototypical conjugated polymer poly(3-hexylthiophen-2,5-diyl) (P3HT) is systematically investigated. It is shown that the WF and injection efficiency depend strongly on the history of UV light exposure. Proper treatment of the ZnO layer enables ohmic hole injection into P3HT, demonstrating ZnO as a potential anode material for organic optoelectronic devices. The results also suggest that valid conclusions on the energy-level alignment at the ZnO/organic interfaces may only be drawn if the illumination history is precisely known and controlled. This is inherently problematic when comparing electronic data from ultraviolet photoelectron spectroscopy (UPS) measurements carried out under different or ill-defined illumination conditions. KW - charge injection across hybrid interfaces KW - energy-level alignments KW - hybrid metal oxides KW - organic interfaces Y1 - 2020 U6 - https://doi.org/10.1002/pssa.201900876 SN - 1862-6300 SN - 1862-6319 VL - 217 IS - 5 SP - 1 EP - 6 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Grischek, Max A1 - Caprioglio, Pietro A1 - Zhang, Jiahuan A1 - Pena-Camargo, Francisco A1 - Sveinbjornsson, Kari A1 - Zu, Fengshuo A1 - Menzel, Dorothee A1 - Warby, Jonathan A1 - Li, Jinzhao A1 - Koch, Norbert A1 - Unger, Eva A1 - Korte, Lars A1 - Neher, Dieter A1 - Stolterfoht, Martin A1 - Albrecht, Steve T1 - Efficiency Potential and Voltage Loss of Inorganic CsPbI2Br Perovskite Solar Cells JF - Solar RRL N2 - Inorganic perovskite solar cells show excellent thermal stability, but the reported power conversion efficiencies are still lower than for organic-inorganic perovskites. This is mainly caused by lower open-circuit voltages (V(OC)s). Herein, the reasons for the low V-OC in inorganic CsPbI2Br perovskite solar cells are investigated. Intensity-dependent photoluminescence measurements for different layer stacks reveal that n-i-p and p-i-n CsPbI2Br solar cells exhibit a strong mismatch between quasi-Fermi level splitting (QFLS) and V-OC. Specifically, the CsPbI2Br p-i-n perovskite solar cell has a QFLS-e center dot V-OC mismatch of 179 meV, compared with 11 meV for a reference cell with an organic-inorganic perovskite of similar bandgap. On the other hand, this study shows that the CsPbI2Br films with a bandgap of 1.9 eV have a very low defect density, resulting in an efficiency potential of 20.3% with a MeO-2PACz hole-transporting layer and 20.8% on compact TiO2. Using ultraviolet photoelectron spectroscopy measurements, energy level misalignment is identified as a possible reason for the QFLS-e center dot V-OC mismatch and strategies for overcoming this V-OC limitation are discussed. This work highlights the need to control the interfacial energetics in inorganic perovskite solar cells, but also gives promise for high efficiencies once this issue is resolved. KW - CsPbI2Br KW - efficiency potentials KW - inorganic perovskites KW - photoluminescence KW - solar cells KW - voltage losses Y1 - 2022 U6 - https://doi.org/10.1002/solr.202200690 SN - 2367-198X VL - 6 IS - 11 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Warby, Jonathan A1 - Zu, Fengshuo A1 - Zeiske, Stefan A1 - Gutierrez-Partida, Emilio A1 - Frohloff, Lennart A1 - Kahmann, Simon A1 - Frohna, Kyle A1 - Mosconi, Edoardo A1 - Radicchi, Eros A1 - Lang, Felix A1 - Shah, Sahil A1 - Pena-Camargo, Francisco A1 - Hempel, Hannes A1 - Unold, Thomas A1 - Koch, Norbert A1 - Armin, Ardalan A1 - De Angelis, Filippo A1 - Stranks, Samuel D. A1 - Neher, Dieter A1 - Stolterfoht, Martin T1 - Understanding performance limiting interfacial recombination in pin Perovskite solar cells JF - Advanced energy materials N2 - Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto-electronic properties and their successful integration into multijunction cells. However, the performance of single- and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C-60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first-principle numerical simulations. It is found that the most significant contribution to the total C-60-induced recombination loss occurs within the first monolayer of C-60, rather than in the bulk of C-60 or at the perovskite surface. The experiments show that the C-60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C-60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells. KW - C60 KW - defects KW - interface recombination KW - loss mechanisms KW - perovskites KW - solar cells Y1 - 2022 U6 - https://doi.org/10.1002/aenm.202103567 SN - 1614-6832 SN - 1614-6840 VL - 12 IS - 12 PB - Wiley-VCH CY - Weinheim ER -