TY  - GEN
A1  - Schulze, Patricia S. C.
A1  - Bett, Alexander J.
A1  - Bivour, Martin
A1  - Caprioglio, Pietro
A1  - Gerspacher, Fabian M.
A1  - Kabaklı, Özde Ş.
A1  - Richter, Armin
A1  - Stolterfoht, Martin
A1  - Zhang, Qinxin
A1  - Neher, Dieter
A1  - Hermle, Martin
A1  - Hillebrecht, Harald
A1  - Glunz, Stefan W.
A1  - Goldschmidt, Jan Christoph
T1  - 25.1% high-efficiency monolithic perovskite silicon tandem solar cell with a high bandgap perovskite absorber
T2  - Postprints der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe
N2  - Monolithic perovskite silicon tandem solar cells can overcome the theoretical efficiency limit of silicon solar cells. This requires an optimum bandgap, high quantum efficiency, and high stability of the perovskite. Herein, a silicon heterojunction bottom cell is combined with a perovskite top cell, with an optimum bandgap of 1.68 eV in planar p-i-n tandem configuration. A methylammonium-free FA(0.75)Cs(0.25)Pb(I0.8Br0.2)(3) perovskite with high Cs content is investigated for improved stability. A 10% molarity increase to 1.1 m of the perovskite precursor solution results in approximate to 75 nm thicker absorber layers and 0.7 mA cm(-2) higher short-circuit current density. With the optimized absorber, tandem devices reach a high fill factor of 80% and up to 25.1% certified efficiency. The unencapsulated tandem device shows an efficiency improvement of 2.3% (absolute) over 5 months, showing the robustness of the absorber against degradation. Moreover, a photoluminescence quantum yield analysis reveals that with adapted charge transport materials and surface passivation, along with improved antireflection measures, the high bandgap perovskite absorber has the potential for 30% tandem efficiency in the near future.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 1197 
KW  - heterojunction silicon solar cells
KW  - interfaces
KW  - perovskite solar cells
KW  - tandem solar cells
KW  - thin films
Y1  - 2020
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-525668
SN  - 1866-8372
IS  - 7
ER  - 
TY  - JOUR
A1  - Schulze, Patricia S. C.
A1  - Bett, Alexander J.
A1  - Bivour, Martin
A1  - Caprioglio, Pietro
A1  - Gerspacher, Fabian M.
A1  - Kabaklı, Özde Ş.
A1  - Richter, Armin
A1  - Stolterfoht, Martin
A1  - Zhang, Qinxin
A1  - Neher, Dieter
A1  - Hermle, Martin
A1  - Hillebrecht, Harald
A1  - Glunz, Stefan W.
A1  - Goldschmidt, Jan Christoph
T1  - 25.1% high-efficiency monolithic perovskite silicon tandem solar cell with a high bandgap perovskite absorber
JF  - Solar RRL
N2  - Monolithic perovskite silicon tandem solar cells can overcome the theoretical efficiency limit of silicon solar cells. This requires an optimum bandgap, high quantum efficiency, and high stability of the perovskite. Herein, a silicon heterojunction bottom cell is combined with a perovskite top cell, with an optimum bandgap of 1.68 eV in planar p-i-n tandem configuration. A methylammonium-free FA(0.75)Cs(0.25)Pb(I0.8Br0.2)(3) perovskite with high Cs content is investigated for improved stability. A 10% molarity increase to 1.1 m of the perovskite precursor solution results in approximate to 75 nm thicker absorber layers and 0.7 mA cm(-2) higher short-circuit current density. With the optimized absorber, tandem devices reach a high fill factor of 80% and up to 25.1% certified efficiency. The unencapsulated tandem device shows an efficiency improvement of 2.3% (absolute) over 5 months, showing the robustness of the absorber against degradation. Moreover, a photoluminescence quantum yield analysis reveals that with adapted charge transport materials and surface passivation, along with improved antireflection measures, the high bandgap perovskite absorber has the potential for 30% tandem efficiency in the near future.
KW  - heterojunction silicon solar cells
KW  - interfaces
KW  - perovskite solar cells
KW  - tandem solar cells
KW  - thin films
Y1  - 2020
VL  - 4
IS  - 7
PB  - John Wiley & Sons, Inc.
CY  - New Jersey
ER  - 
TY  - JOUR
A1  - Raoufi, Meysam
A1  - Hörmann, Ulrich
A1  - Ligorio, Giovanni
A1  - Hildebrandt, Jana
A1  - Pätzel, Michael
A1  - Schultz, Thorsten
A1  - Perdigón-Toro, Lorena
A1  - Koch, Norbert
A1  - List-Kratochvil, Emil
A1  - Hecht, Stefan
A1  - Neher, Dieter
T1  - Simultaneous effect of ultraviolet radiation and surface modification on the work function and hole injection properties of ZnO thin films
JF  - Physica Status Solidi.  A , Applications and materials science
N2  - The combined effect of ultraviolet (UV) light soaking and self-assembled monolayer deposition on the work function (WF) of thin ZnO layers and on the efficiency of hole injection into the prototypical conjugated polymer poly(3-hexylthiophen-2,5-diyl) (P3HT) is systematically investigated. It is shown that the WF and injection efficiency depend strongly on the history of UV light exposure. Proper treatment of the ZnO layer enables ohmic hole injection into P3HT, demonstrating ZnO as a potential anode material for organic optoelectronic devices. The results also suggest that valid conclusions on the energy-level alignment at the ZnO/organic interfaces may only be drawn if the illumination history is precisely known and controlled. This is inherently problematic when comparing electronic data from ultraviolet photoelectron spectroscopy (UPS) measurements carried out under different or ill-defined illumination conditions.
KW  - charge injection across hybrid interfaces
KW  - energy-level alignments
KW  - hybrid metal oxides
KW  - organic interfaces
Y1  - 2020
U6  - https://doi.org/10.1002/pssa.201900876
SN  - 1862-6300
SN  - 1862-6319
VL  - 217
IS  - 5
SP  - 1
EP  - 6
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - GEN
A1  - Stolterfoht, Martin
A1  - Grischek, Max
A1  - Caprioglio, Pietro
A1  - Wolff, Christian Michael
A1  - Gutierrez-Partida, Emilio
A1  - Peña-Camargo, Francisco
A1  - Rothhardt, Daniel
A1  - Zhang, Shanshan
A1  - Raoufi, Meysam
A1  - Wolansky, Jakob
A1  - Abdi-Jalebi, Mojtaba
A1  - Stranks, Samuel D.
A1  - Albrecht, Steve
A1  - Kirchartz, Thomas
A1  - Neher, Dieter
T1  - How to quantify the efficiency potential of neat perovskite films
BT  - Perovskite semiconductors with an implied efficiency exceeding 28%
T2  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe
N2  - Perovskite photovoltaic (PV) cells have demonstrated power conversion efficiencies (PCE) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombination under 1-sun illumination. Nevertheless, compared to GaAs and monocrystalline silicon PV, perovskite cells have significantly lower fill factors due to a combination of resistive and non-radiative recombination losses. This necessitates a deeper understanding of the underlying loss mechanisms and in particular the ideality factor of the cell. By measuring the intensity dependence of the external open-circuit voltage and the internal quasi-Fermi level splitting (QFLS), the transport resistance-free efficiency of the complete cell as well as the efficiency potential of any neat perovskite film with or without attached transport layers are quantified. Moreover, intensity-dependent QFLS measurements on different perovskite compositions allows for disentangling of the impact of the interfaces and the perovskite surface on the non-radiative fill factor and open-circuit voltage loss. It is found that potassium-passivated triple cation perovskite films stand out by their exceptionally high implied PCEs > 28%, which could be achieved with ideal transport layers. Finally, strategies are presented to reduce both the ideality factor and transport losses to push the efficiency to the thermodynamic limit.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 1434 
KW  - non-radiative interface recombination
KW  - perovskite solar cells
KW  - photoluminescence
Y1  - 2020
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-516622
SN  - 1866-8372
IS  - 17
ER  - 
TY  - JOUR
A1  - Stolterfoht, Martin
A1  - Grischek, Max
A1  - Caprioglio, Pietro
A1  - Wolff, Christian Michael
A1  - Gutierrez-Partida, Emilio
A1  - Peña-Camargo, Francisco
A1  - Rothhardt, Daniel
A1  - Zhang, Shanshan
A1  - Raoufi, Meysam
A1  - Wolansky, Jakob
A1  - Abdi-Jalebi, Mojtaba
A1  - Stranks, Samuel D.
A1  - Albrecht, Steve
A1  - Kirchartz, Thomas
A1  - Neher, Dieter
T1  - How to quantify the efficiency potential of neat perovskite films
BT  - Perovskite semiconductors with an implied efficiency exceeding 28%
JF  - Advanced Materials
N2  - Perovskite photovoltaic (PV) cells have demonstrated power conversion efficiencies (PCE) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombination under 1-sun illumination. Nevertheless, compared to GaAs and monocrystalline silicon PV, perovskite cells have significantly lower fill factors due to a combination of resistive and non-radiative recombination losses. This necessitates a deeper understanding of the underlying loss mechanisms and in particular the ideality factor of the cell. By measuring the intensity dependence of the external open-circuit voltage and the internal quasi-Fermi level splitting (QFLS), the transport resistance-free efficiency of the complete cell as well as the efficiency potential of any neat perovskite film with or without attached transport layers are quantified. Moreover, intensity-dependent QFLS measurements on different perovskite compositions allows for disentangling of the impact of the interfaces and the perovskite surface on the non-radiative fill factor and open-circuit voltage loss. It is found that potassium-passivated triple cation perovskite films stand out by their exceptionally high implied PCEs > 28%, which could be achieved with ideal transport layers. Finally, strategies are presented to reduce both the ideality factor and transport losses to push the efficiency to the thermodynamic limit.
KW  - non-radiative interface recombination
KW  - perovskite solar cells
KW  - photoluminescence
Y1  - 2020
U6  - https://doi.org/10.1002/adma.202000080
SN  - 0935-9648
SN  - 1521-4095
VL  - 32
IS  - 17
SP  - 1
EP  - 10
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - GEN
A1  - Wang, Qiong
A1  - Smith, Joel A.
A1  - Skroblin, Dieter
A1  - Steele, Julian A.
A1  - Wolff, Christian Michael
A1  - Caprioglio, Pietro
A1  - Stolterfoht, Martin
A1  - Köbler, Hans
A1  - Turren-Cruz, Silver-Hamill
A1  - Li, Meng
A1  - Gollwitzer, Christian
A1  - Neher, Dieter
A1  - Abate, Antonio
T1  - Managing phase purities and crystal orientation for high-performance and photostable cesium lead halide perovskite solar cells
T2  - Postprints der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe
N2  - Inorganic perovskites with cesium (Cs+) as the cation have great potential as photovoltaic materials if their phase purity and stability can be addressed. Herein, a series of inorganic perovskites is studied, and it is found that the power conversion efficiency of solar cells with compositions CsPbI1.8Br1.2, CsPbI2.0Br1.0, and CsPbI2.2Br0.8 exhibits a high dependence on the initial annealing step that is found to significantly affect the crystallization and texture behavior of the final perovskite film. At its optimized annealing temperature, CsPbI1.8Br1.2 exhibits a pure orthorhombic phase and only one crystal orientation of the (110) plane. Consequently, this allows for the best efficiency of up to 14.6% and the longest operational lifetime, T-S80, of approximate to 300 h, averaged of over six solar cells, during the maximum power point tracking measurement under continuous light illumination and nitrogen atmosphere. This work provides essential progress on the enhancement of photovoltaic performance and stability of CsPbI3 - xBrx perovskite solar cells.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 1210 
KW  - cesium lead halides
KW  - crystal orientation
KW  - inorganic perovskites
KW  - ISOS-L-1I protocol
KW  - phase purity
KW  - photostability
Y1  - 2020
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-525374
SN  - 1866-8372
IS  - 9
ER  -