TY  - JOUR
A1  - Ghani, Fatemeh
A1  - Opitz, Andreas
A1  - Pingel, Patrick
A1  - Heimel, Georg
A1  - Salzmann, Ingo
A1  - Frisch, Johannes
A1  - Neher, Dieter
A1  - Tsami, Argiri
A1  - Scherf, Ullrich
A1  - Koch, Norbert
T1  - Charge Transfer in and Conductivity of Molecularly Doped Thiophene-Based Copolymers
JF  - Journal of polymer science : B, Polymer physics
N2  - The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.
KW  - charge transfer
KW  - conducting polymers
KW  - doping
KW  - thiophene
Y1  - 2015
U6  - https://doi.org/10.1002/polb.23631
SN  - 0887-6266
SN  - 1099-0488
VL  - 53
IS  - 1
SP  - 58
EP  - 63
PB  - Wiley-Blackwell
CY  - Hoboken
ER  - 
TY  - JOUR
A1  - Lu, Guanghao
A1  - Blakesley, James C.
A1  - Himmelberger, Scott
A1  - Pingel, Patrick
A1  - Frisch, Johannes
A1  - Lieberwirth, Ingo
A1  - Salzmann, Ingo
A1  - Oehzelt, Martin
A1  - Di Pietro, Riccardo
A1  - Salleo, Alberto
A1  - Koch, Norbert
A1  - Neher, Dieter
T1  - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
JF  - Nature Communications
N2  - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
Y1  - 2013
U6  - https://doi.org/10.1038/ncomms2587
SN  - 2041-1723
VL  - 4
IS  - 1-2
PB  - Nature Publ. Group
CY  - London
ER  -