TY - JOUR A1 - Legall, Herbert A1 - Stiel, Holger A1 - Beck, Michael A1 - Leupold, Dieter A1 - Gruszecki, Wieslaw I. A1 - Lokstein, Heiko T1 - Near edge X-ray absorption fine structure spectroscopy (NEXAFS) of pigment-protein complexes : peridinin- chlorophyll a-protein (PCP) of Amphidinium carterae N2 - Peridinin-chlorophyll a protein (PCP) is a unique water soluble antenna complex that employs the carotenoid peridinin as the main light-harvesting pigment. In the present study the near edge X-ray absorption fine structure (NEXAFS) spectrum of PCP was recorded at the carbon Kedge. Additionally, the NEXAFS spectra of the constituent pigments, chlorophyll a and peridinin, were measured. The energies of the lowest unoccupied molecular levels of these pigments appearing in the carbon NEXAFS spectrum were resolved. Individual contributions of the pigments and the protein to the measured NEXAFS spectrum of PCP were determined using a "building block" approach combining NEXAFS spectra of the pigments and the amino acids constituting the PCP apoprotein. The results suggest that absorption changes of the pigments in the carbon near K-edge region can be resolved following excitation using a suitable visible pump laser pulse. Consequently, it may be possible to study excitation energy transfer processes involving "optically dark" states of carotenoids in pigment-protein complexes by soft X-ray probe optical pump double resonance spectroscopy (XODR). Y1 - 2007 UR - http://www.sciencedirect.com/science/journal/0165022X U6 - https://doi.org/10.1016/j.jbbm.2006.08.005 SN - 0165-022X ER - TY - THES A1 - Legall, Herbert T1 - Laserspektroskopische Untersuchungen zur kollektiven Anregung in J-Aggregaten und deren Einfluß auf die nichtlinearen optischen Eigenschaften Y1 - 2001 ER - TY - JOUR A1 - Leitner, M. A1 - Glas, P. A1 - Wrage, M. A1 - Sandrock, T. A1 - Legall, Herbert A1 - Heuer, Axel A1 - Agostolopoulos, G. A1 - Herford, J. A1 - Däweritz, L. T1 - Mode locked Nd:glass fiber laser using intensity dependent defocusing by low-temperature-grown GaAs Y1 - 2000 ER -