TY  - JOUR
A1  - Di Pietro, Riccardo
A1  - Venkateshvaran, Deepak
A1  - Klug, Andreas
A1  - List-Kratochvil, Emil J. W.
A1  - Facchetti, Antonio
A1  - Sirringhaus, Henning
A1  - Neher, Dieter
T1  - Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors
JF  - Applied physics letters
N2  - A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials. (C) 2014 AIP Publishing LLC.
Y1  - 2014
U6  - https://doi.org/10.1063/1.4876057
SN  - 0003-6951
SN  - 1077-3118
VL  - 104
IS  - 19
PB  - American Institute of Physics
CY  - Melville
ER  -