TY  - JOUR
A1  - Rader, Oliver
A1  - Pampuch, Carsten
A1  - Shikin, A. M.
A1  - Gudat, Wolfgang
A1  - Okabayashi, J.
A1  - Mizokawa, T.
A1  - Fujimori, A.
A1  - Hayashi, T.
A1  - Tanaka, M.
A1  - Tanaka, A.
A1  - Kimura, A.
T1  - Resonant photoemission of Ga1-xMnxAs at the Mn L edge
N2  - Ga1-xMnxAs, x=0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1x1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L-3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L-3 on-resonance photoemission spectrum for model parameters Delta, U-dd, and (pdsigma) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L-3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory
Y1  - 2004
ER  -