TY  - JOUR
A1  - Miedema, P. S.
A1  - Beye, Martin
A1  - Koennecke, R.
A1  - Schiwietz, G.
A1  - Föhlisch, Alexander
T1  - The angular- and crystal-momentum transfer through electron-phonon coupling in silicon and silicon-carbide: similarities and differences
JF  - New journal of physics : the open-access journal for physics
N2  - Electron-phonon scattering has been studied for silicon carbide (6H-SiC) with resonant inelastic x-ray scattering at the silicon 2p edge. The observed electron-phonon scattering yields a crystal momentum transfer rate per average phonon in 6H-SiC of 1.8 fs(-1) while it is 0.2 fs(-1) in crystalline silicon. The angular momentum transfer rate per average phonon for 6H-SiC is 0.1 fs(-1), which is much higher than 0.0035 fs(-1) obtained for crystalline silicon in a previous study. The higher electron-phonon scattering rates in 6H-SiC are a result of the larger electron localization at the silicon atoms in 6H-SiC as compared to crystalline silicon. While delocalized valence electrons can screen effectively (part of) the electron-phonon interaction, this effect is suppressed for 6H-SiC in comparison to crystalline silicon. Smaller contributions to the difference in electron-phonon scattering rates between 6H-SiC and silicon arise from the lower atomic mass of carbon versus silicon and the difference in local symmetry.
KW  - electron-phonon scattering
KW  - 6H-SiC
KW  - RIXS
Y1  - 2014
U6  - https://doi.org/10.1088/1367-2630/16/9/093056
SN  - 1367-2630
VL  - 16
PB  - IOP Publ. Ltd.
CY  - Bristol
ER  - 
TY  - JOUR
A1  - Schreck, Simon
A1  - Beye, Martin
A1  - Sellberg, Jonas A.
A1  - McQueen, Trevor
A1  - Laksmono, Hartawan
A1  - Kennedy, Brian
A1  - Eckert, Sebastian
A1  - Schlesinger, Daniel
A1  - Nordlund, Dennis
A1  - Ogasawara, Hirohito
A1  - Sierra, Raymond G.
A1  - Segtnan, Vegard H.
A1  - Kubicek, Katharina
A1  - Schlotter, William F.
A1  - Dakovski, Georgi L.
A1  - Moeller, Stefan P.
A1  - Bergmann, Uwe
A1  - Techert, Simone
A1  - Pettersson, Lars G. M.
A1  - Wernet, Philippe
A1  - Bogan, Michael J.
A1  - Harada, Yoshihisa
A1  - Nilsson, Anders
A1  - Föhlisch, Alexander
T1  - Reabsorption of soft x-ray emission at high x-ray free-electron laserfluences
JF  - Physical review letters
N2  - We report on oxygen K-edge soft x-ray emission spectroscopy from a liquid water jet at the Linac Coherent Light Source. We observe significant changes in the spectral content when tuning over a wide range of incident x-ray fluences. In addition the total emission yield decreases at high fluences. These modifications result from reabsorption of x-ray emission by valence-excited molecules generated by the Auger cascade. Our observations have major implications for future x-ray emission studies at intense x-ray sources. We highlight the importance of the x-ray pulse length with respect to the core-hole lifetime.
Y1  - 2014
U6  - https://doi.org/10.1103/PhysRevLett.113.153002
SN  - 0031-9007
SN  - 1079-7114
VL  - 113
IS  - 15
PB  - American Physical Society
CY  - College Park
ER  - 
TY  - JOUR
A1  - Miedema, Piter Sybren
A1  - Beye, Martin
A1  - Koennecke, R.
A1  - Schiwietz, Gregor
A1  - Föhlisch, Alexander
T1  - Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap
JF  - Journal of electron spectroscopy and related phenomena : the international journal on theoretical and experimental aspects of electron spectroscopy
N2  - The band gap of semiconductors like silicon and silicon carbide (SIC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 x 10(-4) eV/K and a conduction-band slope of -1.334 x 10(-4) eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and nonresonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range. (C) 2014 Elsevier B.V. All rights reserved.
KW  - RIXS
KW  - XAS
KW  - XES
KW  - Semiconductors
KW  - Silicon carbide
Y1  - 2014
U6  - https://doi.org/10.1016/j.elspec.2014.08.003
SN  - 0368-2048
SN  - 1873-2526
VL  - 197
SP  - 37
EP  - 42
PB  - Elsevier
CY  - Amsterdam
ER  -