TY - JOUR A1 - Steigert, Alexander A1 - Kojda, Sandrino Danny A1 - Ibaceta-Jaña, Josefa Fernanda A1 - Abou-Ras, Daniel A1 - Gunder, René A1 - Alktash, Nivin A1 - Habicht, Klaus A1 - Wagner, Markus Raphael A1 - Klenk, Reiner A1 - Raoux, Simone A1 - Szyszka, Bernd A1 - Lauermann, Iver A1 - Muydinov, Ruslan T1 - Water-assisted crystallization of amorphous indium zinc oxide films JF - Materials today. Communications N2 - Transparent conductive materials based on indium oxide remain yet irreplaceable in various optoelectronic applications. Amorphous oxides appear especially attractive for technology as they are isotropic, demonstrate relatively high electron mobility and can be processed at low temperatures. Among them is indium zinc oxide (IZO) with a large zinc content that is crucial for keeping the amorphous state but redundant for the doping. In this work we investigated water-free and water containing IZO films obtained by radio frequency sputtering. The correlation between temperature driven changes of the chemical state, the optical and electrical properties as well as the progression of crystallization was in focus. Such characterization methods as: scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, temperature dependent Hall-effect measurements and others were applied. Temperature dependent electrical properties of amorphous IZO and IZO:H2O films were found to evolve similarly. Based on our experience in In2O3:H2O (In2O3:H or IOH) we proposed an explanation for the changes observed. Water admixture was found to decrease crystallization temperature of IZO significantly from similar to 550 degrees C to similar to 280 degrees C. Herewith, the presence and concentration of water and/or hydroxyls was found to determine Zn distribution in the film. In particular, Zn enrichment was detected at the film's surface respective to the high water and/or hydroxyl amount. Raman spectra revealed a two-dimensional crystallization of w-ZnO which precedes regardless water presence an extensive In2O3 crystallization. An abrupt loss of electron mobility as a result of crystallization was attributed to the formation of ZnO interlayer on grain boundaries. KW - IZO KW - Thin films KW - TCOs KW - Crystallization KW - Water-assisted crystallization Y1 - 2022 U6 - https://doi.org/10.1016/j.mtcomm.2022.103213 SN - 2352-4928 VL - 31 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Balderas-Valadez, Ruth Fabiola A1 - Antunez, E. E. A1 - Olive-Mendez, Sion Federico A1 - Pacholski, Claudia A1 - Campos-Alvarez, Jose A1 - Bokhimi, Xim A1 - Agarwal, V. T1 - Porous silicon pillar and bilayer structure as a nucleation center for the formation of aligned vanadium pentoxide nanorods JF - Ceramics International N2 - Porous silicon single layer (PSM), bilayer (PSB) and pillar (PSP) structures have been evaluated as nucleation centers for vanadium pentoxide (V2O5) crystals. Deposition of vanadium precursor over different substrates (drop casting technique), followed by annealing treatment under Ar-H-2 (5% H-2) atmosphere, induced crystallization of vanadium oxide. With respect to c-Si/SiO2 substrate, V2O5 nanorods with relatively large aspect ratio were formed over and within PSP structures. On the other hand, pores in PSM and PSB were found to be filled with relatively smaller crystals. Additionally, PSB provided a nucleation substrate capable to align the nanocrystals in a preferential orientation, while V2O5 crystals grown on PSP were found to be randomly aligned around the nanoporous pillar microstructure. Nanorods and nanocrystals were identified as V2O5 by temperature-controlled XRD measurements and evidence of their crystalline nature was observed via transmission electron microscopy. A careful analysis of electronic microscopy images allows the identification of the facets composing the ends of the crystals and its corresponding surface free energy has been evaluated employing the Wulff theorem. Such high surface area composite structures have potential applications as cathode material in Lithium-ion batteries. KW - Porous silicon KW - Vanadium pentoxide KW - Nanorods KW - Crystallization KW - Nanostructures Y1 - 2017 U6 - https://doi.org/10.1016/j.ceramint.2017.03.114 SN - 0272-8842 SN - 1873-3956 VL - 43 SP - 8023 EP - 8030 PB - Elsevier CY - Oxford ER - TY - JOUR A1 - Emmerling, Franziska A1 - Orgzall, Ingo A1 - Dietzel, Birgit A1 - Schulz, Burkhard A1 - Larrucea, Julen T1 - Ordering the amorphous - Structures in PBD LED materials JF - Journal of molecular structure N2 - The class of 2,5 disubstituted-1,3,4-oxadiazoles containing a biphenyl unit on one side is intensively used as electron transport materials to enhance the performance of organic light emitting diodes (OLEDs). In contrast to the ongoing research on these materials insights in their structure-property relationships are still incomplete. To overcome the structural tentativeness and ambiguities the crystal structures of 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, that of the related compound 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole and of 2-(4-biphenylyl)-5-(2,6-dimethylphenyl)-1,3,4-oxadiazole are determined. A comparison with the results of GAUSSIAN03 calculations and similar compounds in the Cambridge Structural Database leads to a profound characterization. KW - OLED KW - PBD KW - Diphenyl-1,3,4-oxadiazole KW - Crystallization Y1 - 2012 U6 - https://doi.org/10.1016/j.molstruc.2012.04.040 SN - 0022-2860 VL - 1030 IS - 23 SP - 209 EP - 215 PB - Elsevier CY - Amsterdam ER -