TY - JOUR A1 - Pietsch, Ullrich T1 - Reversible negative thermal expansion of polymer films Y1 - 2002 ER - TY - JOUR A1 - Pietsch, Ullrich T1 - Investigations of semiconductor surfaces and interfaces by X-ray grazing incidence diffraction Y1 - 2000 SN - 0011-3891 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Barberka, Thomas Andreas A1 - Geue, Thomas A1 - Stömmer, Ralph T1 - X-ray scattering from thin organic films and multilayers Y1 - 1997 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Bhattacharya, M. K. A1 - Mukherjee, M. A1 - Sanyal, M. K. A1 - Geue, Thomas A1 - Grenzer, Jörg T1 - Energy dispersive x-ray reflectivity technique to study thermal properties of polymer films Y1 - 2003 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Bhattacharya, M. K. A1 - Sanyal, M. K. A1 - Geue, Thomas T1 - Glass transition in Ultrathin Polymer Films : a Thermal Expansion Study N2 - The glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of the glass transition temperature (T-g) as the thickness of an ultrathin polymer film reduces below the radius of gyration but the change in the average T-g was found to be very small. The existence of reversible negative and positive thermal expansion below and above T-g increased the sensitivity of our thickness measurements performed using energy-dispersive x-ray reflectivity. A simple model of the T-g variation as a function of depth expected from sliding motion could explain the results Y1 - 2005 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Bodenthin, Yves A1 - Grenzer, Jörg A1 - Geue, Thomas A1 - Möhwald, Helmuth A1 - Kurth, Dirk G. T1 - Structure and temperature behavior of metallo-supramolecular assemblies N2 - A detailed structural analysis of a Langmuir-Blodgett (LB) multilayer composed of a polyelectrolyte-amphiphile complex (PAC) is presented. The PAC is self-assembled from metal ions, ditopic bis-terpyridines, and amphiphiles. The vertical structure of the LB multilayer is investigated by X-ray reflectometry. The multilayer has a periodicity of 57 A, which corresponds to an architecture of flat lying metallo-supramolecular coordination polyelectrolyte (MEPE) rods and upright-standing amphiphiles (dihexadecyl phosphate, DHP). In-plane diffraction reveals hexagonal packing of the DHP molecules. Using extended X-ray absorption fine structure (EXAFS) experiments, we prove that the central metal ion is coordinated to the terpyridine moieties in a pseudo-octahedral coordination environment. The Fe-N bond distances are 1.82 and 2.0 angstrom, respectively. Temperature resolved measurements indicate a reversible phase transition in a temperature range up to 55 degrees C. EXAFS measurements indicate a lengthening of the average Fe-N bond distance from 1.91 to 1.95 angstrom. The widening of the coordination cage upon heating is expected to lower the ligand field stabilization, thus giving rise to spin transitions in these composite materials Y1 - 2005 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Bodenthin, Yves A1 - Möhwald, Helmuth A1 - Kurth, Dirk G. T1 - Inducing spin crossover in metallo-supramolecular polyelectrolytes through an amphiphilic phase transition N2 - A phase transition in an amphiphilic mesophase is explored to deliberately induce mechanical strain in an assembly of tightly coupled metal ion coordination centers. Melting of the alkyl chains in the amphiphilic mesophase causes distortion of the coordination geometry around the central transition metal ion. As a result, the crystal field splitting of the d-orbital subsets decreases resulting in a spin transition from a low-spin to a high-spin state. The diamagnetic-paramagnetic transition is reversible. This concept is demonstrated in a metallo-supramolecular coordination polyelectrolyte-amphiphile complex self-assembled from ditopic bis-terpyridines, Fe(II) as central transition metal, and dialkyl phosphates as amphiphiles. The magnetic properties are studied in a Langmuir-Blodgett multilayer. The modularity of this concept provides extensive control of structure and function from molecular to macroscopic length scales and gives access to a wide range of new molecular magnetic architectures such as nanostructures, thin films, and liquid crystals Y1 - 2005 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Darowski, Nora A1 - Ulyanenkov, A. A1 - Grenzer, Jörg A1 - Wang, K. H. A1 - Forchel, Alfred T1 - Analysis of the strain distribution in lateral nanostructures for interpreting photoluminescence data Y1 - 2000 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Davaasambuu, Jav A1 - Kochin, V. A1 - Schwarz, K. H. A1 - Blaha, Pawel T1 - The atomistic origin of the inverse piezoelectric effect in a-quartz N2 - Ab initio calculations have been carried out using the FP-APW+lo method in order to understand the atomic origin of the inverse piezoelectric effect in x-quartz. The external electric field was modelled by a saw-like potential V-ext in order to achieve translational symmetry within a supercell (SC) containing 72 atoms. The original trigonal quartz structure was repeated along the [110] direction, which corresponds to the direction of the external field. An electric field with 550 kV/mm was applied and the atomic positions of the SC were relaxed until the forces acting on the atoms vanished. In parts of the SC, V-ext changes almost linearly and thus the relaxed atomic positions can be used to determine the structural response due to the external electric field. The calculations provide the piezoelectric modulus of the correct order of magnitude. In contrast to previous models and in agreement with recent experimental results, the atomic origin of the piezoelectric effect can be described by a rotation of slightly deformed SiO4 tetrahedra against each other. The change of the Si-O bond lengths and the tetrahedral O-Si-O angles is one order of magnitude smaller than that of the Si-O-Si angles between neighbouring tetrahedra. The calculated changes of X-ray structure factors are in agreement with experiment when the theoretical data are extrapolated down to the much smaller field strength that is applied in the experiment (E < 10 kV/mm). (C) 2004 Elsevier Ltd. All rights reserved Y1 - 2004 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Davaasambuu, Jav A1 - Pucher, Andreas A1 - Kochin, V. T1 - Atomistic origin of the inverse piezoelectric effect in alpha-SiO2 and alpha-GaPO4 Y1 - 2003 UR - http://www.edpsciences.org/articles/epl/pdf/2003/12/7666.pdf?access=ok SN - 0295-5075 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Geue, Thomas A1 - Henneberg, Oliver A1 - Saphiannikova, Marina T1 - X-ray investigations of formation efficiency of buried azobenzene polymer density gratings Y1 - 2003 UR - http://scitation.aip.org/journals/doc/JAPIAU-ft/vol_93/iss_6/3161_1.html U6 - https://doi.org/10.1063/1.1554753 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Grenzer, Jörg A1 - Bischoff, Lothar T1 - Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and An ion beam implantation N2 - Strain analysis of a laterally patterned Si-wafer was carried out utilizing X-ray grazing-incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 x 10(14) cm(-2)) or 70 keV Ge++ ions (dose: 8 X 10(14) cm(-1)). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Y1 - 2005 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Grenzer, Jörg A1 - Geue, Thomas A1 - Neißendorfer, Frank A1 - Brezesinski, Gerald A1 - Symietz, Christian A1 - Möhwald, Helmuth A1 - Gudat, Wolfgang T1 - The energy dispersive reflectometer at BESSY II : a challenge for thin film analysis Y1 - 2001 SN - 0167- 5087 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Grenzer, Jörg A1 - Grigorian, Souren A. A1 - Weyers, Markus A1 - Zeimer, Ute A1 - Feranchuk, S. A1 - Fricke, J. A1 - Kissel, H. A1 - Knauer, A. A1 - Tränkle, G. T1 - Nanoengineering of lateral strain-modulation in quantum well heterostructures N2 - We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stressor layer grown on top of a single quantum well which itself is not patterned. The three-dimensional (3D) strain distribution within the lateral nanostructure is calculated using linear elasticity theory applying a finite element technique. Based on the deformation potential approach the calculated strain distribution is translated into a local variation of the band-gap energy. Using a given vertical layer structure we are able to optimize the geometrical parameters to provide a nanostructure with maximum lateral band-gap variation. Experimentally such a structure was realized by etching a surface grating into a tensile-strained InGaP stressor layer grown on top of a compressively strained InGaAs-single quantum well. The achieved 3D strain distribution and the induced band-gap variation are successfully probed by x-ray grazing incidence diffraction and low-temperature photoluminescence measurements, respectively Y1 - 2004 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Grigorian, Souren A. A1 - Grenzer, Jörg A1 - Feranchuk, S. A1 - Zeimer, Ute T1 - Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures Y1 - 2003 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Grigorian, Souren A. A1 - Grenzer, Jörg A1 - Vartanyants, Ivan A. T1 - Thermal diffuse scattering in grazing incidence diffraction Y1 - 2003 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Gupta, Ajay A1 - Gupta, Mukul A1 - Ayachit, S. A1 - Rajagopalan, S. A1 - Balamurgan, A. K. A1 - Tyagi, A. K. T1 - Iron self-diffusion in nanocrystalline FeCr thin films N2 - Thin films of amorphous Fe85Zr15 alloy were deposited by ion-beam sputtering of a composite target. Analogous to the melt-spun amorphous alloys of similar composition, the crystallization of the amorphous film occurs in two steps, however, with a substantially reduced thermal stability. After completion of the first crystallization step which starts at 473 K, the microstructure consists of 12 nm nanocrystals of bcc-Fe embedded in a grain boundary region of the remaining amorphous phase. At 673 K, the remaining amorphous phase transforms into the Fe2Zr alloy. The self-diffusion measurements of iron in the nanocrystalline state and in the parent amorphous state has been carried out using secondary ion mass spectroscopy (SIMS) depth profiling and neutron reflectivity techniques. In contrast to the case of finemet Fe73.5Si13.5B9Nb3Cu1 alloy, where a significant enhancement of diffusivity takes place in the nanocrystalline state, in the present case the diffusivity in the nanocrystalline state is similar to that in the parent amorphous state. It is suggested that in this system the atomic diffusion occurs mainly via the grain boundary regions. The calculated values of the pre-exponential factor and the activation energy for the diffusion are D-0 = 1 x 10(-14+/-1) m(2)/s and E = (0.7 +/- 0.1) eV respectively. (C) 2004 Published by Elsevier B.V. Y1 - 2004 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Gupta, Amod A1 - Paul, A. A1 - Meneghini, C. A1 - Mibu, K. A1 - Maddalena, S. A1 - Dal Toe, S. A1 - Principi, G. T1 - Structural characterization of epitaxial Fe/Cr multilayers using anomalous x-ray scattering and neutron reflectivity N2 - The interface structure of epitaxial Fe/Cr multilayers was studied using anomalous X-ray and neutron reflectivity. The analysis of X-ray reflectivity at three different energies provided a reliable information about the interface roughnesses. It is found that the Cr-on-Fc interface is more diffused as compared to the Fe-on-Cr interface and that the roughness exhibits a significant increase with increasing depth. The magnetic roughness, as determined from neutron reflectivity, is lower than the geometrical roughness, in conformity with the behavior of a number of magnetic thin films and multilayers. (C) 2004 Elsevier B.V. All rights reserved Y1 - 2004 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Hansen, N. K. T1 - A critical review of the valence charge density in GaAs Y1 - 1996 ER - TY - JOUR A1 - Pietsch, Ullrich A1 - Hazra, S. A1 - Chini, T. K. A1 - Sanyal, M. K. A1 - Grenzer, Jörg T1 - Ripple structure of crystalline layers in ion beam induced Si wafers N2 - Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved x-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses (similar to7x10(17) ions/cm(2)), starting from initiation at low doses (similar to1x10(17) ions/cm(2)) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID technique reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple Y1 - 2004 ER -