TY  - GEN
A1  - Caprioglio, Pietro
A1  - Stolterfoht, Martin
A1  - Wolff, Christian Michael
A1  - Unold, Thomas
A1  - Rech, Bernd
A1  - Albrecht, Steve
A1  - Neher, Dieter
T1  - On the relation between the open‐circuit voltage and quasi‐Fermi level splitting in efficient perovskite solar cells
T2  - Postprints der Universität Potsdam Mathematisch-Naturwissenschaftliche Reihe
N2  - Today's perovskite solar cells (PSCs) are limited mainly by their open‐circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity‐dependent measurements of the quasi‐Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin‐type PSCs with efficiencies above 20%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley‐Queisser theory. This has far‐reaching implications for the applicability of some well‐established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift‐diffusion simulations, the intensity dependence of the QFLS, the QFLS‐VOC offset and the ideality factor are consistently explained by trap‐assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS‐VOC relation is of great importance.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 774 
KW  - electro‐optical materials
KW  - perovskite solar cells
KW  - photovoltaic devices
KW  - thin films
Y1  - 2019
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-437595
SN  - 1866-8372
IS  - 774
ER  - 
TY  - JOUR
A1  - Caprioglio, Pietro
A1  - Stolterfoht, Martin
A1  - Wolff, Christian Michael
A1  - Unold, Thomas
A1  - Rech, Bernd
A1  - Albrecht, Steve
A1  - Neher, Dieter
T1  - On the relation between the open-circuit voltage and quasi-fermi level splitting in efficient perovskite solar cells
JF  - advanced energy materials
N2  - Today's perovskite solar cells (PSCs) are limited mainly by their open‐circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity‐dependent measurements of the quasi‐Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin‐type PSCs with efficiencies above 20%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley‐Queisser theory. This has far‐reaching implications for the applicability of some well‐established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift‐diffusion simulations, the intensity dependence of the QFLS, the QFLS‐VOC offset and the ideality factor are consistently explained by trap‐assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS‐VOC relation is of great importance.
KW  - electro-optical materials
KW  - perovskite solar cells
KW  - photovoltaic devices
KW  - thin films
Y1  - 2019
U6  - https://doi.org/10.1002/aenm.201901631
SN  - 1614-6832
SN  - 1614-6840
VL  - 9
IS  - 33
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - GEN
A1  - Schulze, Patricia S. C.
A1  - Bett, Alexander J.
A1  - Bivour, Martin
A1  - Caprioglio, Pietro
A1  - Gerspacher, Fabian M.
A1  - Kabaklı, Özde Ş.
A1  - Richter, Armin
A1  - Stolterfoht, Martin
A1  - Zhang, Qinxin
A1  - Neher, Dieter
A1  - Hermle, Martin
A1  - Hillebrecht, Harald
A1  - Glunz, Stefan W.
A1  - Goldschmidt, Jan Christoph
T1  - 25.1% high-efficiency monolithic perovskite silicon tandem solar cell with a high bandgap perovskite absorber
T2  - Postprints der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe
N2  - Monolithic perovskite silicon tandem solar cells can overcome the theoretical efficiency limit of silicon solar cells. This requires an optimum bandgap, high quantum efficiency, and high stability of the perovskite. Herein, a silicon heterojunction bottom cell is combined with a perovskite top cell, with an optimum bandgap of 1.68 eV in planar p-i-n tandem configuration. A methylammonium-free FA(0.75)Cs(0.25)Pb(I0.8Br0.2)(3) perovskite with high Cs content is investigated for improved stability. A 10% molarity increase to 1.1 m of the perovskite precursor solution results in approximate to 75 nm thicker absorber layers and 0.7 mA cm(-2) higher short-circuit current density. With the optimized absorber, tandem devices reach a high fill factor of 80% and up to 25.1% certified efficiency. The unencapsulated tandem device shows an efficiency improvement of 2.3% (absolute) over 5 months, showing the robustness of the absorber against degradation. Moreover, a photoluminescence quantum yield analysis reveals that with adapted charge transport materials and surface passivation, along with improved antireflection measures, the high bandgap perovskite absorber has the potential for 30% tandem efficiency in the near future.
T3  - Zweitveröffentlichungen der Universität Potsdam : Mathematisch-Naturwissenschaftliche Reihe - 1197 
KW  - heterojunction silicon solar cells
KW  - interfaces
KW  - perovskite solar cells
KW  - tandem solar cells
KW  - thin films
Y1  - 2020
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:517-opus4-525668
SN  - 1866-8372
IS  - 7
ER  - 
TY  - JOUR
A1  - Schulze, Patricia S. C.
A1  - Bett, Alexander J.
A1  - Bivour, Martin
A1  - Caprioglio, Pietro
A1  - Gerspacher, Fabian M.
A1  - Kabaklı, Özde Ş.
A1  - Richter, Armin
A1  - Stolterfoht, Martin
A1  - Zhang, Qinxin
A1  - Neher, Dieter
A1  - Hermle, Martin
A1  - Hillebrecht, Harald
A1  - Glunz, Stefan W.
A1  - Goldschmidt, Jan Christoph
T1  - 25.1% high-efficiency monolithic perovskite silicon tandem solar cell with a high bandgap perovskite absorber
JF  - Solar RRL
N2  - Monolithic perovskite silicon tandem solar cells can overcome the theoretical efficiency limit of silicon solar cells. This requires an optimum bandgap, high quantum efficiency, and high stability of the perovskite. Herein, a silicon heterojunction bottom cell is combined with a perovskite top cell, with an optimum bandgap of 1.68 eV in planar p-i-n tandem configuration. A methylammonium-free FA(0.75)Cs(0.25)Pb(I0.8Br0.2)(3) perovskite with high Cs content is investigated for improved stability. A 10% molarity increase to 1.1 m of the perovskite precursor solution results in approximate to 75 nm thicker absorber layers and 0.7 mA cm(-2) higher short-circuit current density. With the optimized absorber, tandem devices reach a high fill factor of 80% and up to 25.1% certified efficiency. The unencapsulated tandem device shows an efficiency improvement of 2.3% (absolute) over 5 months, showing the robustness of the absorber against degradation. Moreover, a photoluminescence quantum yield analysis reveals that with adapted charge transport materials and surface passivation, along with improved antireflection measures, the high bandgap perovskite absorber has the potential for 30% tandem efficiency in the near future.
KW  - heterojunction silicon solar cells
KW  - interfaces
KW  - perovskite solar cells
KW  - tandem solar cells
KW  - thin films
Y1  - 2020
VL  - 4
IS  - 7
PB  - John Wiley & Sons, Inc.
CY  - New Jersey
ER  -