TY - JOUR A1 - Stolterfoht, Martin A1 - Caprioglio, Pietro A1 - Wolff, Christian Michael A1 - Marquez, Jose A. A1 - Nordmann, Joleik A1 - Zhang, Shanshan A1 - Rothhardt, Daniel A1 - Hörmann, Ulrich A1 - Amir, Yohai A1 - Redinger, Alex A1 - Kegelmann, Lukas A1 - Zu, Fengshuo A1 - Albrecht, Steve A1 - Koch, Norbert A1 - Kirchartz, Thomas A1 - Saliba, Michael A1 - Unold, Thomas A1 - Neher, Dieter T1 - The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells JF - Energy & environmental science N2 - Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces. Y1 - 2019 U6 - https://doi.org/10.1039/c9ee02020a SN - 1754-5692 SN - 1754-5706 VL - 12 IS - 9 SP - 2778 EP - 2788 PB - Royal Society of Chemistry CY - Cambridge ER - TY - JOUR A1 - Nikolis, Vasileios C. A1 - Mischok, Andreas A1 - Siegmund, Bernhard A1 - Kublitski, Jonas A1 - Jia, Xiangkun A1 - Benduhn, Johannes A1 - Hörmann, Ulrich A1 - Neher, Dieter A1 - Gather, Malte C. A1 - Spoltore, Donato A1 - Vandewal, Koen T1 - Strong light-matter coupling for reduced photon energy losses in organic photovoltaics JF - Nature Communications N2 - Strong light-matter coupling can re-arrange the exciton energies in organic semiconductors. Here, we exploit strong coupling by embedding a fullerene-free organic solar cell (OSC) photo-active layer into an optical microcavity, leading to the formation of polariton peaks and a red-shift of the optical gap. At the same time, the open-circuit voltage of the device remains unaffected. This leads to reduced photon energy losses for the low-energy polaritons and a steepening of the absorption edge. While strong coupling reduces the optical gap, the energy of the charge-transfer state is not affected for large driving force donor-acceptor systems. Interestingly, this implies that strong coupling can be exploited in OSCs to reduce the driving force for electron transfer, without chemical or microstructural modifications of the photoactive layer. Our work demonstrates that the processes determining voltage losses in OSCs can now be tuned, and reduced to unprecedented values, simply by manipulating the device architecture. Y1 - 2019 U6 - https://doi.org/10.1038/s41467-019-11717-5 SN - 2041-1723 VL - 10 PB - Nature Publ. Group CY - London ER - TY - JOUR A1 - Hörmann, Ulrich A1 - Zeiske, Stefan A1 - Piersimoni, Fortunato A1 - Hoffmann, Lukas A1 - Schlesinger, Raphael A1 - Koch, Norbert A1 - Riedl, Thomas A1 - Andrienko, Denis A1 - Neher, Dieter T1 - Stark effect of hybrid charge transfer states at planar ZnO/organic interfaces JF - Physical review : B, Condensed matter and materials physics N2 - We investigate the bias dependence of the hybrid charge transfer state emission at planar heterojunctions between the metal oxide acceptor ZnO and three donor molecules. The electroluminescence peak energy linearly increases with the applied bias, saturating at high fields. Variation of the organic layer thickness and deliberate change of the ZnO conductivity through controlled photodoping allow us to confirm that this bias-induced spectral shift relates to the internal electric field in the organic layer rather than the filling of states at the hybrid interface. We show that existing continuum models overestimate the hole delocalization and propose a simple electrostatic model in which the linear and quadratic Stark effects are explained by the electrostatic interaction of a strongly polarizable molecular cation with its mirror image. Y1 - 2018 U6 - https://doi.org/10.1103/PhysRevB.98.155312 SN - 2469-9950 SN - 2469-9969 VL - 98 IS - 15 PB - American Physical Society CY - College Park ER - TY - JOUR A1 - Raoufi, Meysam A1 - Hörmann, Ulrich A1 - Ligorio, Giovanni A1 - Hildebrandt, Jana A1 - Pätzel, Michael A1 - Schultz, Thorsten A1 - Perdigon-Toro, Lorena A1 - Koch, Norbert A1 - List-Kratochvil, Emil A1 - Hecht, Stefan A1 - Neher, Dieter T1 - Simultaneous effect of ultraviolet radiation and surface modification on the work function and hole injection properties of ZnO thin films JF - Physica Status Solidi. A , Applications and materials science N2 - The combined effect of ultraviolet (UV) light soaking and self-assembled monolayer deposition on the work function (WF) of thin ZnO layers and on the efficiency of hole injection into the prototypical conjugated polymer poly(3-hexylthiophen-2,5-diyl) (P3HT) is systematically investigated. It is shown that the WF and injection efficiency depend strongly on the history of UV light exposure. Proper treatment of the ZnO layer enables ohmic hole injection into P3HT, demonstrating ZnO as a potential anode material for organic optoelectronic devices. The results also suggest that valid conclusions on the energy-level alignment at the ZnO/organic interfaces may only be drawn if the illumination history is precisely known and controlled. This is inherently problematic when comparing electronic data from ultraviolet photoelectron spectroscopy (UPS) measurements carried out under different or ill-defined illumination conditions. KW - charge injection across hybrid interfaces KW - energy-level alignments KW - hybrid metal oxides KW - organic interfaces Y1 - 2020 U6 - https://doi.org/10.1002/pssa.201900876 SN - 1862-6300 SN - 1862-6319 VL - 217 IS - 5 SP - 1 EP - 6 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Collado-Fregoso, Elisa A1 - Pugliese, Silvina N. A1 - Wojcik, Mariusz A1 - Benduhn, Johannes A1 - Bar-Or, Eyal A1 - Perdigon-Toro, Lorena A1 - Hörmann, Ulrich A1 - Spoltore, Donato A1 - Vandewal, Koen A1 - Hodgkiss, Justin M. A1 - Neher, Dieter T1 - Energy-gap law for photocurrent generation in fullerene-based organic solar cells BT - the case of low-donor-content blends JF - Journal of the American Chemical Society N2 - The involvement of charge-transfer (CT) states in the photogeneration and recombination of charge carriers has been an important focus of study within the organic photovoltaic community. In this work, we investigate the molecular factors determining the mechanism of photocurrent generation in low-donor-content organic solar cells, where the active layer is composed of vacuum-deposited C-60 and small amounts of organic donor molecules. We find a pronounced decline of all photovoltaic parameters with decreasing CT state energy. Using a combination of steady-state photocurrent measurements and time-delayed collection field experiments, we demonstrate that the power conversion efficiency, and more specifically, the fill factor of these devices, is mainly determined by the bias dependence of photocurrent generation. By combining these findings with the results from ultrafast transient absorption spectroscopy, we show that blends with small CT energies perform poorly because of an increased nonradiative CT state decay rate and that this decay obeys an energy-gap law. Our work challenges the common view that a large energy offset at the heterojunction and/or the presence of fullerene clusters guarantee efficient CT dissociation and rather indicates that charge generation benefits from high CT state energies through a slower decay to the ground state. Y1 - 2019 U6 - https://doi.org/10.1021/jacs.8b09820 SN - 0002-7863 VL - 141 IS - 6 SP - 2329 EP - 2341 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Hörmann, Ulrich A1 - Zeiske, Stefan A1 - Park, Soohyung A1 - Schultz, Thorsten A1 - Kickhoefel, Sebastian A1 - Scherf, Ullrich A1 - Blumstengel, Sylke A1 - Koch, Norbert A1 - Neher, Dieter T1 - Direct observation of state-filling at hybrid tin oxide/organic interfaces JF - Applied physics letters N2 - Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blue-shift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor. Published under license by AIP Publishing. Y1 - 2019 U6 - https://doi.org/10.1063/1.5082704 SN - 0003-6951 SN - 1077-3118 VL - 114 IS - 18 PB - American Institute of Physics CY - Melville ER -