TY - JOUR A1 - Caprioglio, Pietro A1 - Zu, Fengshuo A1 - Wolff, Christian Michael A1 - Prieto, Jose A. Marquez A1 - Stolterfoht, Martin A1 - Becker, Pascal A1 - Koch, Norbert A1 - Unold, Thomas A1 - Rech, Bernd A1 - Albrecht, Steve A1 - Neher, Dieter T1 - High open circuit voltages in pin-type perovskite solar cells through strontium addition JF - Sustainable Energy & Fuels N2 - The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer. Y1 - 2019 U6 - https://doi.org/10.1039/c8se00509e SN - 2398-4902 VL - 3 IS - 2 SP - 550 EP - 563 PB - Royal Society of Chemistry CY - Cambridge ER - TY - JOUR A1 - Lai, Huagui A1 - Luo, Jincheng A1 - Zwirner, Yannick A1 - Olthof, Selina A1 - Wieczorek, Alexander A1 - Ye, Fangyuan A1 - Jeangros, Quentin A1 - Yin, Xinxing A1 - Akhundova, Fatima A1 - Ma, Tianshu A1 - He, Rui A1 - Kothandaraman, Radha K. A1 - Chin, Xinyu A1 - Gilshtein, Evgeniia A1 - Muller, Andre A1 - Wang, Changlei A1 - Thiesbrummel, Jarla A1 - Siol, Sebastian A1 - Prieto, Jose Marquez A1 - Unold, Thomas A1 - Stolterfoht, Martin A1 - Chen, Cong A1 - Tiwari, Ayodhya N. A1 - Zhao, Dewei A1 - Fu, Fan T1 - High-performance flexible all-Perovskite tandem solar cells with reduced V-OC-deficit in wide-bandgap subcell JF - Advanced energy materials N2 - Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as their low open-circuit voltage (V-OC). Here, it is reported that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, a postdeposition treatment with 2-thiopheneethylammonium chloride is employed to further suppress the bulk and interfacial recombination, boosting the V-OC of the WBG top cell to 1.29 V. Based on this, the first proof-of-concept four-terminal all-perovskite flexible TSC with a power conversion efficiency of 22.6% is presented. When integrating into two-terminal flexible tandems, 23.8% flexible all-perovskite TSCs with a superior V-OC of 2.1 V is achieved, which is on par with the V-OC reported on the 28% all-perovskite tandems grown on the rigid substrate. KW - all-perovskite tandems KW - flexible tandem solar cells KW - perovskite KW - V OC-deficit KW - wide-bandgap Y1 - 2022 U6 - https://doi.org/10.1002/aenm.202202438 SN - 1614-6832 SN - 1614-6840 VL - 12 IS - 45 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Kegelmann, Lukas A1 - Tockhorn, Philipp A1 - Wolff, Christian Michael A1 - Márquez, José A. A1 - Caicedo Dávila, Sebastián A1 - Korte, Lars A1 - Unold, Thomas A1 - Loevenich, Wilfried A1 - Neher, Dieter A1 - Rech, Bernd A1 - Albrecht, Steve T1 - Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells JF - ACS applied materials & interfaces N2 - Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM. KW - perovskite solar cell KW - selective contact KW - spiro-OMeTAD KW - PEDOT KW - recombination KW - passivation KW - quasi-Fermi level splitting Y1 - 2019 U6 - https://doi.org/10.1021/acsami.9b01332 SN - 1944-8244 SN - 1944-8252 VL - 11 IS - 9 SP - 9172 EP - 9181 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Caprioglio, Pietro A1 - Stolterfoht, Martin A1 - Wolff, Christian Michael A1 - Unold, Thomas A1 - Rech, Bernd A1 - Albrecht, Steve A1 - Neher, Dieter T1 - On the relation between the open-circuit voltage and quasi-fermi level splitting in efficient perovskite solar cells JF - advanced energy materials N2 - Today's perovskite solar cells (PSCs) are limited mainly by their open‐circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity‐dependent measurements of the quasi‐Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin‐type PSCs with efficiencies above 20%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley‐Queisser theory. This has far‐reaching implications for the applicability of some well‐established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift‐diffusion simulations, the intensity dependence of the QFLS, the QFLS‐VOC offset and the ideality factor are consistently explained by trap‐assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS‐VOC relation is of great importance. KW - electro-optical materials KW - perovskite solar cells KW - photovoltaic devices KW - thin films Y1 - 2019 U6 - https://doi.org/10.1002/aenm.201901631 SN - 1614-6832 SN - 1614-6840 VL - 9 IS - 33 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Kirchartz, Thomas A1 - Márquez, José A. A1 - Stolterfoht, Martin A1 - Unold, Thomas T1 - Photoluminescence-based characterization of halide perovskites for photovoltaics JF - Advanced Energy Materials N2 - Photoluminescence spectroscopy is a widely applied characterization technique for semiconductor materials in general and halide perovskite solar cell materials in particular. It can give direct information on the recombination kinetics and processes as well as the internal electrochemical potential of free charge carriers in single semiconductor layers, layer stacks with transport layers, and complete solar cells. The correct evaluation and interpretation of photoluminescence requires the consideration of proper excitation conditions, calibration and application of the appropriate approximations to the rather complex theory, which includes radiative recombination, non-radiative recombination, interface recombination, charge transfer, and photon recycling. In this article, an overview is given of the theory and application to specific halide perovskite compositions, illustrating the variables that should be considered when applying photoluminescence analysis in these materials. KW - metal halide perovskites KW - numerical simulations KW - photoluminescence KW - photon recycling Y1 - 2020 U6 - https://doi.org/10.1002/aenm.201904134 SN - 1614-6832 SN - 1614-6840 VL - 10 IS - 26 SP - 1 EP - 21 PB - Wiley CY - Weinheim ER - TY - JOUR A1 - Pena-Camargo, Francisco A1 - Thiesbrummel, Jarla A1 - Hempel, Hannes A1 - Musiienko, Artem A1 - Le Corre, Vincent M. A1 - Diekmann, Jonas A1 - Warby, Jonathan A1 - Unold, Thomas A1 - Lang, Felix A1 - Neher, Dieter A1 - Stolterfoht, Martin T1 - Revealing the doping density in perovskite solar cells and its impact on device performance JF - Applied physics reviews N2 - Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the electrode charge per cell volume under short-circuit conditions ( CUbi/eV), which amounts to roughly 10(16) cm(-3). This figure of merit represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results consistently demonstrate that the doping density is below this critical threshold 10(12) cm(-3), which means << CUbi / e V) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations, which confirm that the device performance is not affected by such low doping densities. Y1 - 2022 U6 - https://doi.org/10.1063/5.0085286 SN - 1931-9401 VL - 9 IS - 2 PB - AIP Publishing CY - Melville ER - TY - JOUR A1 - Stolterfoht, Martin A1 - Caprioglio, Pietro A1 - Wolff, Christian Michael A1 - Marquez, Jose A. A1 - Nordmann, Joleik A1 - Zhang, Shanshan A1 - Rothhardt, Daniel A1 - Hörmann, Ulrich A1 - Amir, Yohai A1 - Redinger, Alex A1 - Kegelmann, Lukas A1 - Zu, Fengshuo A1 - Albrecht, Steve A1 - Koch, Norbert A1 - Kirchartz, Thomas A1 - Saliba, Michael A1 - Unold, Thomas A1 - Neher, Dieter T1 - The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells JF - Energy & environmental science N2 - Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces. Y1 - 2019 U6 - https://doi.org/10.1039/c9ee02020a SN - 1754-5692 SN - 1754-5706 VL - 12 IS - 9 SP - 2778 EP - 2788 PB - Royal Society of Chemistry CY - Cambridge ER - TY - JOUR A1 - Lehmann, Frederike A1 - Franz, Alexandra A1 - Toebbens, Daniel M. A1 - Levcenco, Sergej A1 - Unold, Thomas A1 - Taubert, Andreas A1 - Schorr, Susan T1 - The phase diagram of a mixed halide (Br, I) hybrid perovskite obtained by synchrotron X-ray diffraction JF - RSC Advances N2 - By using synchrotron X-ray powder diffraction, the temperature dependent phase diagram of the hybrid perovskite tri-halide compounds, methyl ammonium lead iodide (MAPbI3, MA+ = CH3NH3+) and methyl ammonium lead bromide (MAPbBr3), as well as of their solid solutions, has been established. The existence of a large miscibility gap between 0.29 ≤ x ≤ 0.92 (±0.02) for the MAPb(I1−xBrx)3 solid solution has been proven. A systematic study of the lattice parameters for the solid solution series at room temperature revealed distinct deviations from Vegard's law. Furthermore, temperature dependent measurements showed that a strong temperature dependency of lattice parameters from the composition is present for iodine rich compositions. In contrast, the bromine rich compositions show an unusually low dependency of the phase transition temperature from the degree of substitution. Y1 - 2019 U6 - https://doi.org/10.1039/c8ra09398a SN - 2046-2069 VL - 9 IS - 20 SP - 11151 EP - 11159 PB - Royal Society of Chemistry CY - Cambridge ER - TY - JOUR A1 - Zhang, Shanshan A1 - Hosseini, Seyed Mehrdad A1 - Gunder, Rene A1 - Petsiuk, Andrei A1 - Caprioglio, Pietro A1 - Wolff, Christian Michael A1 - Shoaee, Safa A1 - Meredith, Paul A1 - Schorr, Susan A1 - Unold, Thomas A1 - Burn, Paul L. A1 - Neher, Dieter A1 - Stolterfoht, Martin T1 - The Role of Bulk and Interface Recombination in High-Efficiency Low-Dimensional Perovskite Solar Cells JF - Advanced materials N2 - 2D Ruddlesden-Popper perovskite (RPP) solar cells have excellent environmental stability. However, the power conversion efficiency (PCE) of RPP cells remains inferior to 3D perovskite-based cells. Herein, 2D (CH3(CH2)(3)NH3)(2)(CH3NH3)(n-1)PbnI3n+1 perovskite cells with different numbers of [PbI6](4-) sheets (n = 2-4) are analyzed. Photoluminescence quantum yield (PLQY) measurements show that nonradiative open-circuit voltage (V-OC) losses outweigh radiative losses in materials with n > 2. The n = 3 and n = 4 films exhibit a higher PLQY than the standard 3D methylammonium lead iodide perovskite although this is accompanied by increased interfacial recombination at the top perovskite/C-60 interface. This tradeoff results in a similar PLQY in all devices, including the n = 2 system where the perovskite bulk dominates the recombination properties of the cell. In most cases the quasi-Fermi level splitting matches the device V-OC within 20 meV, which indicates minimal recombination losses at the metal contacts. The results show that poor charge transport rather than exciton dissociation is the primary reason for the reduction in fill factor of the RPP devices. Optimized n = 4 RPP solar cells had PCEs of 13% with significant potential for further improvements. KW - 2D perovskites KW - interface recombination KW - perovskite solar cells KW - photoluminescence KW - V-OC loss Y1 - 2019 U6 - https://doi.org/10.1002/adma.201901090 SN - 0935-9648 SN - 1521-4095 VL - 31 IS - 30 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Stolterfoht, Martin A1 - Wolff, Christian Michael A1 - Marquez, Jose A. A1 - Zhang, Shanshan A1 - Hages, Charles J. A1 - Rothhardt, Daniel A1 - Albrecht, Steve A1 - Burn, Paul L. A1 - Meredith, Paul A1 - Unold, Thomas A1 - Neher, Dieter T1 - Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells JF - Nature Energy N2 - The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombination pathways in planar pintype perovskite solar cells with undoped organic charge transport layers. We find significant quasi-Fermi-level splitting losses (135 meV) in the perovskite bulk, whereas interfacial recombination results in an additional free energy loss of 80 meV at each individual interface, which limits the open-circuit voltage (V-oc) of the complete cell to similar to 1.12 V. Inserting ultrathin interlayers between the perovskite and transport layers leads to a substantial reduction of these interfacial losses at both the p and n contacts. Using this knowledge and approach, we demonstrate reproducible dopant-free 1 cm(2) perovskite solar cells surpassing 20% efficiency (19.83% certified) with stabilized power output, a high V-oc (1.17 V) and record fill factor (>81%). KW - Energy science and technology KW - Solar cells Y1 - 2018 U6 - https://doi.org/10.1038/s41560-018-0219-8 SN - 2058-7546 VL - 3 IS - 10 SP - 847 EP - 854 PB - Nature Publ. Group CY - London ER -