TY  - JOUR
A1  - Blakesley, James C.
A1  - Schubert, Marcel
A1  - Steyrleuthner, Robert
A1  - Chen, Zhihua
A1  - Facchetti, Antonio
A1  - Neher, Dieter
T1  - Time-of-flight measurements and vertical transport in a high electron-mobility polymer
JF  - Applied physics letters
N2  - We investigate charge transport in a high-electron mobility polymer, poly(N, N-bis 2-octyldodecyl-naphthalene-1,4,5,8-bis dicarboximide-2,6-diyl-alt-5,5-2,2-bithiophene) [P(NDI2OD-T2), Polyera ActivInk (TM) N2200]. Time-of-flight measurements reveal electron mobilities approaching those measured in field-effect transistors, the highest ever recorded in a conjugated polymer using this technique. The modest temperature dependence and weak dispersion of the transients indicate low energetic disorder in this material. Steady-state electron-only current measurements reveal a barrier to injection of about 300 meV. We propose that this barrier is located within the P(NDI2OD-T2) film and arises from molecular orientation effects.
Y1  - 2011
U6  - https://doi.org/10.1063/1.3657827
SN  - 0003-6951
VL  - 99
IS  - 18
PB  - American Institute of Physics
CY  - Melville
ER  - 
TY  - JOUR
A1  - Rivnay, Jonathan
A1  - Steyrleuthner, Robert
A1  - Jimison, Leslie H.
A1  - Casadei, Alberto
A1  - Chen, Zhihua
A1  - Toney, Michael F.
A1  - Facchetti, Antonio
A1  - Neher, Dieter
A1  - Salleo, Alberto
T1  - Drastic control of texture in a high performance n-Type polymeric semiconductor and implications for charge transport
JF  - Macromolecules : a publication of the American Chemical Society
N2  - Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer [N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material.
Y1  - 2011
U6  - https://doi.org/10.1021/ma200864s
SN  - 0024-9297
VL  - 44
IS  - 13
SP  - 5246
EP  - 5255
PB  - American Chemical Society
CY  - Washington
ER  -