TY - JOUR A1 - Thielemann-Kühn, Nele A1 - Schick, Daniel A1 - Pontius, Niko A1 - Trabant, Christoph A1 - Mitzner, Rolf A1 - Holldack, Karsten A1 - Zabel, Hartmut A1 - Föhlisch, Alexander A1 - Schuessler-Langeheine, Christian T1 - Ultrafast and Energy-Efficient Quenching of Spin Order: Antiferromagnetism Beats Ferromagnetism JF - Physical review letters N2 - By comparing femtosecond laser pulse induced ferro- and antiferromagnetic dynamics in one and the same material-metallic dysprosium-we show both to behave fundamentally different. Antiferromagnetic order is considerably faster and much more efficiently reduced by optical excitation than its ferromagnetic counterpart. We assign the fast and extremely efficient process in the antiferromagnet to an interatomic transfer of angular momentum within the spin system. Our findings imply that this angular momentum transfer channel is effective in other magnetic metals with nonparallel spin alignment. They also point out a possible route towards energy-efficient spin manipulation for magnetic devices. Y1 - 2017 U6 - https://doi.org/10.1103/PhysRevLett.119.197202 SN - 0031-9007 SN - 1079-7114 VL - 119 PB - American Physical Society CY - College Park ER - TY - JOUR A1 - Thielemann-Kühn, Nele A1 - Hoffmann, P. A1 - Föhlisch, Alexander T1 - A versatile detector for total fluorescence and electron yield experiments JF - Review of scientific instruments : a monthly journal devoted to scientific instruments, apparatus, and techniques N2 - The combination of a non-coated silicon photodiode with electron repelling meshes makes a versatile detector for total fluorescence yield and electron yield techniques highly suitable for x-ray absorption spectroscopy. In particular, a copper mesh with a bias voltage allows to suppress or transmit the electron yield signal. The performance of this detection scheme has been characterized by near edge x-ray absorption fine structure studies of thermal oxidized silicon and sapphire. The results show that the new detector probes both electron yield and for a bias voltage exceeding the maximum photon energy the total fluorescence yield. Y1 - 2012 U6 - https://doi.org/10.1063/1.4754126 SN - 0034-6748 VL - 83 IS - 9 PB - American Institute of Physics CY - Melville ER - TY - JOUR A1 - Miedema, Piter S. A1 - Thielemann-Kühn, Nele A1 - Calafell, Irati Alonso A1 - Schüßler-Langeheine, Christian A1 - Beye, Martin T1 - Strain analysis from M-edge resonant inelastic X-ray scattering of nickel oxide films JF - Physical chemistry, chemical physics : a journal of European Chemical Societies N2 - Electronic structure modifications due to strain are an effective method for tailoring nano-scale functional materials. Demonstrated on nickel oxide (NiO) thin films, Resonant Inelastic X-ray Scattering (RIXS) at the transition-metal M-2,M-3-edge is shown to be a powerful tool for measuring the electronic structure modification due to strain in the near-surface region. Analyses from the M-2,M-3-edge RIXS in comparison with dedicated crystal field multiplet calculations show distortions in 40 nm NiO grown on a magnesium oxide (MgO) substrate (NiO/MgO) similar to those caused by surface relaxation of bulk NiO. The films of 20 and 10 nm NiO/MgO show slightly larger differences from bulk NiO. Quantitatively, the NiO/MgO samples all are distorted from perfect octahedral (O-h) symmetry with a tetragonal parameter Ds of about -0.1 eV, very close to the Ds distortion from octahedral (O-h) symmetry parameter of -0.11 eV obtained for the surface-near region from a bulk NiO crystal. Comparing the spectra of a 20 nm film of NiO grown on a 20 nm magnetite (Fe3O4) film on a MgO substrate (NiO/Fe3O4/MgO) with the calculated multiplet analyses, the distortion parameter Ds appears to be closer to zero, showing that the surface-near region of this templated film is less distorted from O-h symmetry than the surface-near region in bulk NiO. Finally, the potential of M-2,M-3-edge RIXS for other investigations of strain on electronic structure is discussed. Y1 - 2019 U6 - https://doi.org/10.1039/c9cp03593a SN - 1463-9076 SN - 1463-9084 VL - 21 IS - 38 SP - 21596 EP - 21602 PB - Royal Society of Chemistry CY - Cambridge ER -