TY  - JOUR
A1  - Lu, Guanghao
A1  - Di Pietro, Riccardo
A1  - Kölln, Lisa Sophie
A1  - Nasrallah, Iyad
A1  - Zhou, Ling
A1  - Mollinger, Sonya
A1  - Himmelberger, Scott
A1  - Koch, Norbert
A1  - Salleo, Alberto
A1  - Neher, Dieter
T1  - Dual-Characteristic Transistors Based on Semiconducting Polymer Blends
JF  - Advanced electronic materials
N2  - A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec&#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.
KW  - charge accumulation
KW  - crystalline ordering
KW  - field-effect-transistor
KW  - semiconducting polymers
Y1  - 2016
U6  - https://doi.org/10.1002/aelm.201600267
SN  - 2199-160X
VL  - 2
SP  - 2344
EP  - 2351
PB  - Wiley-Blackwell
CY  - Hoboken
ER  - 
TY  - JOUR
A1  - Steyrleuthner, Robert
A1  - Di Pietro, Riccardo
A1  - Collins, Brian A.
A1  - Polzer, Frank
A1  - Himmelberger, Scott
A1  - Schubert, Marcel
A1  - Chen, Zhihua
A1  - Zhang, Shiming
A1  - Salleo, Alberto
A1  - Ade, Harald W.
A1  - Facchetti, Antonio
A1  - Neher, Dieter
T1  - The Role of Regioregularity, Crystallinity, and Chain Orientation on Electron Transport in a High-Mobility n-Type Copolymer
JF  - Journal of the American Chemical Society
Y1  - 2014
U6  - https://doi.org/10.1021/ja4118736
SN  - 0002-7863
VL  - 136
IS  - 11
SP  - 4245
EP  - 4256
PB  - American Chemical Society
CY  - Washington
ER  - 
TY  - JOUR
A1  - Lu, Guanghao
A1  - Blakesley, James C.
A1  - Himmelberger, Scott
A1  - Pingel, Patrick
A1  - Frisch, Johannes
A1  - Lieberwirth, Ingo
A1  - Salzmann, Ingo
A1  - Oehzelt, Martin
A1  - Di Pietro, Riccardo
A1  - Salleo, Alberto
A1  - Koch, Norbert
A1  - Neher, Dieter
T1  - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
JF  - Nature Communications
N2  - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
Y1  - 2013
U6  - https://doi.org/10.1038/ncomms2587
SN  - 2041-1723
VL  - 4
IS  - 1-2
PB  - Nature Publ. Group
CY  - London
ER  -