TY  - JOUR
A1  - Grenzer, Jörg
A1  - Darowski, Nora
A1  - Geue, Thomas
A1  - Pietsch, Ullrich
A1  - Daniel, A.
A1  - Rennon, Siegfried
A1  - Reithmaier, Johann-Peter
A1  - Forchel, Alfred
T1  - Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation
Y1  - 2001
ER  - 
TY  - JOUR
A1  - Zen, Achmad
A1  - Bilge, Askin
A1  - Galbrecht, Frank
A1  - Alle, Ronald
A1  - Meerholz, Klaus
A1  - Grenzer, Jörg
A1  - Neher, Dieter
A1  - Scherf, Ullrich
A1  - Farrell, Tony
T1  - Solution processable organic field-effect transistors utilizing an alpha,alpha '-dihexylpentathiophene- based swivel cruciform
Y1  - 2006
UR  - http://pubs.acs.org/doi/full/10.1021/ja0573357
U6  - https://doi.org/10.1021/Ja0573357
ER  - 
TY  - JOUR
A1  - Pietsch, Ullrich
A1  - Hazra, S.
A1  - Chini, T. K.
A1  - Sanyal, M. K.
A1  - Grenzer, Jörg
T1  - Ripple structure of crystalline layers in ion beam induced Si wafers
N2  - Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved x-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses (similar to7x10(17) ions/cm(2)), starting from initiation at low doses (similar to1x10(17) ions/cm(2)) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID technique reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple
Y1  - 2004
ER  - 
TY  - JOUR
A1  - Pietsch, Ullrich
A1  - Grenzer, Jörg
A1  - Grigorian, Souren A.
A1  - Weyers, Markus
A1  - Zeimer, Ute
A1  - Feranchuk, S.
A1  - Fricke, J.
A1  - Kissel, H.
A1  - Knauer, A.
A1  - Tränkle, G.
T1  - Nanoengineering of lateral strain-modulation in quantum well heterostructures
N2  - We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stressor layer grown on top of a single quantum well which itself is not patterned. The three-dimensional (3D) strain distribution within the lateral nanostructure is calculated using linear elasticity theory applying a finite element technique. Based on the deformation potential approach the calculated strain distribution is translated into a local variation of the band-gap energy. Using a given vertical layer structure we are able to optimize the geometrical parameters to provide a nanostructure with maximum lateral band-gap variation. Experimentally such a structure was realized by etching a surface grating into a tensile-strained InGaP stressor layer grown on top of a compressively strained InGaAs-single quantum well. The achieved 3D strain distribution and the induced band-gap variation are successfully probed by x-ray grazing incidence diffraction and low-temperature photoluminescence measurements, respectively
Y1  - 2004
ER  - 
TY  - JOUR
A1  - Zeimer, Ute
A1  - Grenzer, Jörg
A1  - Pietsch, Ullrich
A1  - Bugge, F.
A1  - Smirnitzki, V.
A1  - Weyers, Markus
T1  - Investigation of strain-modulated InGaAs-nanostructures by grazing-incidence x-ray diffraction and photoluminescence
Y1  - 2001
ER  - 
TY  - JOUR
A1  - Karcenko, Anatolij V.
A1  - Englisch, Uwe
A1  - Grenzer, Jörg
A1  - Geue, Thomas
A1  - Pietsch, Ullrich
A1  - Siebrecht, R.
T1  - Investigation of partially deuterated multilayers by means of X-ray and polarized neutron reflectometry
Y1  - 2000
SN  - 1044-8632
ER  - 
TY  - JOUR
A1  - Stahn, Jochen
A1  - Geue, Thomas
A1  - Grenzer, Jörg
A1  - Pietsch, Ullrich
T1  - Interaction of short-chain alkanes with surface and interfaces of multilayer films built from amphiphilic molecules: an in-situ X-ray and neutron scattering probe
Y1  - 2000
ER  - 
TY  - JOUR
A1  - Pietsch, Ullrich
A1  - Zeimer, Ute
A1  - Grenzer, Jörg
A1  - Grigorian, Souren A.
A1  - Fricke, J.
A1  - Gramlich, S.
A1  - Bugge, F.
A1  - Weyers, Markus
A1  - Trankle, G.
T1  - Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs- nanostructures
Y1  - 2003
ER  - 
TY  - JOUR
A1  - Zeimer, Ute
A1  - Baumbach, Tilo
A1  - Grenzer, Jörg
A1  - Lübbert, Daniel
A1  - Mazuelas, A.
A1  - Pietsch, Ullrich
A1  - Erbert, G.
T1  - In-situ characterization of strain distribution in broad-area high-power lasers under operation by high- resolution x-ray diffrcation and topography using synchrotron radiation
Y1  - 1999
ER  - 
TY  - JOUR
A1  - Zhuang, Y.
A1  - Pietsch, Ullrich
A1  - Stangl, Jochen
A1  - Holý, Vaclav
A1  - Darowski, Nora
A1  - Grenzer, Jörg
A1  - Zerlauth, S.
A1  - Schäffler, F.
A1  - Bauer, Günther
T1  - In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction
Y1  - 2000
ER  -