TY  - JOUR
A1  - Yin, Zhong
A1  - Rajkovic, Ivan
A1  - Veedu, Sreevidya Thekku
A1  - Deinert, Sascha
A1  - Raiser, Dirk
A1  - Jain, Rohit
A1  - Fukuzawa, Hironobu
A1  - Wada, Shin-ichi
A1  - Quevedo, Wilson
A1  - Kennedy, Brian
A1  - Schreck, Simon
A1  - Pietzsch, Annette
A1  - Wernet, Philippe
A1  - Ueda, Kyoshi
A1  - Föhlisch, Alexander
A1  - Techert, Simone
T1  - Ionic solutions probed by resonant inelastic X-ray scattering
JF  - Zeitschrift für physikalische Chemie : international journal of research in physical chemistry and chemical physics
N2  - X-ray spectroscopy is a powerful tool to study the local charge distribution of chemical systems. Together with the liquid jet it becomes possible to probe chemical systems in their natural environment, the liquid phase. In this work, we present X-ray absorption (XA), X-ray emission (XE) and resonant inelastic X-ray scattering (RIXS) data of pure water and various salt solutions and show the possibilities these methods offer to elucidate the nature of ion-water interaction.
KW  - X-ray Spectroscopy
KW  - XAS
KW  - XES
KW  - RIXS
KW  - Anions
KW  - Cations
KW  - Liquid Jet
KW  - Synchrotron Radiation
Y1  - 2015
U6  - https://doi.org/10.1515/zpch-2015-0610
SN  - 0942-9352
VL  - 229
IS  - 10-12
SP  - 1855
EP  - 1867
PB  - De Gruyter
CY  - Berlin
ER  - 
TY  - JOUR
A1  - Miedema, Piter Sybren
A1  - Beye, Martin
A1  - Koennecke, R.
A1  - Schiwietz, Gregor
A1  - Föhlisch, Alexander
T1  - Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap
JF  - Journal of electron spectroscopy and related phenomena : the international journal on theoretical and experimental aspects of electron spectroscopy
N2  - The band gap of semiconductors like silicon and silicon carbide (SIC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 x 10(-4) eV/K and a conduction-band slope of -1.334 x 10(-4) eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and nonresonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range. (C) 2014 Elsevier B.V. All rights reserved.
KW  - RIXS
KW  - XAS
KW  - XES
KW  - Semiconductors
KW  - Silicon carbide
Y1  - 2014
U6  - https://doi.org/10.1016/j.elspec.2014.08.003
SN  - 0368-2048
SN  - 1873-2526
VL  - 197
SP  - 37
EP  - 42
PB  - Elsevier
CY  - Amsterdam
ER  -