TY - JOUR A1 - Stömmer, Ralph A1 - Zeimer, Ute A1 - Pietsch, Ullrich T1 - Diffuse Röntgenstreuung an LB-Filmen Y1 - 1995 ER - TY - JOUR A1 - Darowski, Nora A1 - Paschke, K. A1 - Pietsch, Ullrich A1 - Wang, K. H. A1 - Forchel, Alfred A1 - Baumbach, Tilo A1 - Zeimer, Ute T1 - Identification of a buried single quantum well within surface structurized semiconductors using depth resolved x-ray grazing-incidence diffraction Y1 - 1997 ER - TY - JOUR A1 - Rose, Dirk A1 - Pietsch, Ullrich A1 - Zeimer, Ute T1 - Characterization of InGaAs single quantum wells buried in GaAs[001] by grazing incidence diffraction Y1 - 1997 ER - TY - JOUR A1 - Darowski, Nora A1 - Pietsch, Ullrich A1 - Zeimer, Ute A1 - Smirnitzki, V. A1 - Bugge, F. T1 - Nondestructive analysis of a lateral GaAs nanostructure buried under AlGaAs using conventional high resolution and grazing incidence X-ray diffraction Y1 - 1998 ER - TY - JOUR A1 - Grenzer, Jörg A1 - Schomburg, E. A1 - Lingott, I. A1 - Ignotov, A. a. A1 - Renk, K. F. A1 - Pietsch, Ullrich A1 - Rose, Dirk A1 - Zeimer, Ute A1 - Melzer, B. J. A1 - Ivanov, S. A1 - Schaposchnikov, S. A1 - Kop'ev, P. S. A1 - Pavel'ev, D. G. A1 - Koschurinov, Yu. T1 - X-ray and transport characterization of an Esaki-Tsu superlattice device Y1 - 1998 ER - TY - THES A1 - Zeimer, Ute T1 - Untersuchung des Einflusses der Wachstumsparameter der metallorganischen Gasphasenepitaxie auf das Relaxationsverhalten von GaAs/InxGa1-xAs/GaAs-Quantengräben Y1 - 1998 CY - Potsdam ER - TY - JOUR A1 - Zeimer, Ute A1 - Baumbach, Tilo A1 - Grenzer, Jörg A1 - Lübbert, Daniel A1 - Mazuelas, A. A1 - Pietsch, Ullrich A1 - Erbert, G. T1 - In-situ characterization of strain distribution in broad-area high-power lasers under operation by high- resolution x-ray diffrcation and topography using synchrotron radiation Y1 - 1999 ER - TY - JOUR A1 - Zeimer, Ute A1 - Bugge, F. A1 - Gramlich, S. A1 - Smirnitzki, V. A1 - Weyers, Markus A1 - Tränkle, G. A1 - Grenzer, Jörg A1 - Pietsch, Ullrich A1 - Cassabois, G. A1 - Emiliani, V. A1 - Lienau, C. T1 - Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy Y1 - 2000 ER - TY - JOUR A1 - Zeimer, Ute A1 - Grenzer, Jörg A1 - Pietsch, Ullrich A1 - Bugge, F. A1 - Smirnitzki, V. A1 - Weyers, Markus T1 - Investigation of strain-modulated InGaAs-nanostructures by grazing-incidence x-ray diffraction and photoluminescence Y1 - 2001 ER - TY - JOUR A1 - Zeimer, Ute A1 - Bugge, F. A1 - Gramlich, S. A1 - Smirnitzki, V. A1 - Weyers, Markus A1 - Tränkle, G. A1 - Grenzer, Jörg A1 - Pietsch, Ullrich A1 - Cassabois, G. A1 - Emiliani, V. A1 - Linau, Christoph T1 - Evidence of strain-induced lateral carrier confinement in InGaAs-quantum wells by low-temperature near-field spectroscopy Y1 - 2001 ER -