Dokument-ID Dokumenttyp Verfasser/Autoren Herausgeber Haupttitel Abstract Auflage Verlagsort Verlag Erscheinungsjahr Seitenzahl Schriftenreihe Titel Schriftenreihe Bandzahl ISBN Quelle der Hochschulschrift Konferenzname Quelle:Titel Quelle:Jahrgang Quelle:Heftnummer Quelle:Erste Seite Quelle:Letzte Seite URN DOI Abteilungen OPUS4-39289 Wissenschaftlicher Artikel Yin, Zhong; Rajkovic, Ivan; Veedu, Sreevidya Thekku; Deinert, Sascha; Raiser, Dirk; Jain, Rohit; Fukuzawa, Hironobu; Wada, Shin-ichi; Quevedo, Wilson; Kennedy, Brian; Schreck, Simon; Pietzsch, Annette; Wernet, Philippe; Ueda, Kyoshi; Föhlisch, Alexander; Techert, Simone Ionic solutions probed by resonant inelastic X-ray scattering X-ray spectroscopy is a powerful tool to study the local charge distribution of chemical systems. Together with the liquid jet it becomes possible to probe chemical systems in their natural environment, the liquid phase. In this work, we present X-ray absorption (XA), X-ray emission (XE) and resonant inelastic X-ray scattering (RIXS) data of pure water and various salt solutions and show the possibilities these methods offer to elucidate the nature of ion-water interaction. Berlin De Gruyter 2015 13 Zeitschrift für physikalische Chemie : international journal of research in physical chemistry and chemical physics 229 10-12 1855 1867 10.1515/zpch-2015-0610 Institut für Physik und Astronomie OPUS4-37321 Wissenschaftlicher Artikel Miedema, Piter Sybren; Beye, Martin; Koennecke, R.; Schiwietz, Gregor; Föhlisch, Alexander Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap The band gap of semiconductors like silicon and silicon carbide (SIC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 x 10(-4) eV/K and a conduction-band slope of -1.334 x 10(-4) eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and nonresonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range. (C) 2014 Elsevier B.V. All rights reserved. Amsterdam Elsevier 2014 6 Journal of electron spectroscopy and related phenomena : the international journal on theoretical and experimental aspects of electron spectroscopy 197 37 42 10.1016/j.elspec.2014.08.003 Institut für Physik und Astronomie