@article{PoelkingBenduhnSpoltoreetal.2022, author = {Poelking, Carl and Benduhn, Johannes and Spoltore, Donato and Schwarze, Martin and Roland, Steffen and Piersimoni, Fortunato and Neher, Dieter and Leo, Karl and Vandewal, Koen and Andrienko, Denis}, title = {Open-circuit voltage of organic solar cells}, series = {Communications physics}, volume = {5}, journal = {Communications physics}, number = {1}, publisher = {Nature portfolio}, address = {Berlin}, issn = {2399-3650}, doi = {10.1038/s42005-022-01084-x}, pages = {7}, year = {2022}, abstract = {Organic photovoltaics (PV) is an energy-harvesting technology that offers many advantages, such as flexibility, low weight and cost, as well as environmentally benign materials and manufacturing techniques. Despite growth of power conversion efficiencies to around 19 \% in the last years, organic PVs still lag behind inorganic PV technologies, mainly due to high losses in open-circuit voltage. Understanding and improving open circuit voltage in organic solar cells is challenging, as it is controlled by the properties of a donor-acceptor interface where the optical excitations are separated into charge carriers. Here, we provide an electrostatic model of a rough donor-acceptor interface and test it experimentally on small molecule PV materials systems. The model provides concise relationships between the open-circuit voltage, photovoltaic gap, charge-transfer state energy, and interfacial morphology. In particular, we show that the electrostatic bias generated across the interface reduces the photovoltaic gap. This negative influence on open-circuit voltage can, however, be circumvented by adjusting the morphology of the donor-acceptor interface. Organic solar cells, despite their high power conversion efficiencies, suffer from open circuit voltage losses making them less appealing in terms of applications. Here, the authors, supported with experimental data on small molecule photovoltaic cells, relate open circuit voltage to photovoltaic gap, charge-transfer state energy, and donor-acceptor interfacial morphology.}, language = {en} } @article{FieselNeherScherf1999, author = {Fiesel, R. and Neher, Dieter and Scherf, Ullrich}, title = {On the solid state aggregation of chiral substituted poly(para-phenylene)s (PPPs)}, year = {1999}, language = {en} } @article{CaprioglioStolterfohtWolffetal.2019, author = {Caprioglio, Pietro and Stolterfoht, Martin and Wolff, Christian Michael and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter}, title = {On the relation between the open-circuit voltage and quasi-fermi level splitting in efficient perovskite solar cells}, series = {advanced energy materials}, volume = {9}, journal = {advanced energy materials}, number = {33}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.201901631}, pages = {10}, year = {2019}, abstract = {Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin-type PSCs with efficiencies above 20\%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-VOC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-VOC relation is of great importance.}, language = {en} } @article{SandbergKurpiersStolterfohtetal.2020, author = {Sandberg, Oskar J. and Kurpiers, Jona and Stolterfoht, Martin and Neher, Dieter and Meredith, Paul and Shoaee, Safa and Armin, Ardalan}, title = {On the question of the need for a built-in potential in Perovskite solar cells}, series = {Advanced materials interfaces}, volume = {7}, journal = {Advanced materials interfaces}, number = {10}, publisher = {Wiley}, address = {Hoboken}, issn = {2196-7350}, doi = {10.1002/admi.202000041}, pages = {8}, year = {2020}, abstract = {Perovskite semiconductors as the active materials in efficient solar cells exhibit free carrier diffusion lengths on the order of microns at low illumination fluxes and many hundreds of nanometers under 1 sun conditions. These lengthscales are significantly larger than typical junction thicknesses, and thus the carrier transport and charge collection should be expected to be diffusion controlled. A consensus along these lines is emerging in the field. However, the question as to whether the built-in potential plays any role is still of matter of some conjecture. This important question using phase-sensitive photocurrent measurements and theoretical device simulations based upon the drift-diffusion framework is addressed. In particular, the role of the built-in electric field and charge-selective transport layers in state-of-the-art p-i-n perovskite solar cells comparing experimental findings and simulation predictions is probed. It is found that while charge collection in the junction does not require a drift field per se, a built-in potential is still needed to avoid the formation of reverse electric fields inside the active layer, and to ensure efficient extraction through the charge transport layers.}, language = {en} } @misc{PisoniStolterfohtLockingeretal.2019, author = {Pisoni, Stefano and Stolterfoht, Martin and Lockinger, Johannes and Moser, Thierry and Jiang, Yan and Caprioglio, Pietro and Neher, Dieter and Buecheler, Stephan and Tiwari, Ayodhya N.}, title = {On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells}, series = {Postprints der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe}, journal = {Postprints der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe}, number = {1110}, issn = {1866-8372}, doi = {10.25932/publishup-45961}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-459617}, pages = {12}, year = {2019}, abstract = {The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C-60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from similar to 1.23 eV for the bare absorber, just similar to 90 meV below the radiative limit, to similar to 1.10 eV when C-60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of similar to 30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure. [GRAPHICS] .}, language = {en} } @article{PisoniStolterfohtLockingeretal.2019, author = {Pisoni, Stefano and Stolterfoht, Martin and Lockinger, Johannes and Moser, Thierry and Jiang, Yan and Caprioglio, Pietro and Neher, Dieter and Buecheler, Stephan and Tiwari, Ayodhya N.}, title = {On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells}, series = {Science and technology of advanced materials : STAM}, volume = {20}, journal = {Science and technology of advanced materials : STAM}, publisher = {Taylor \& Francis}, address = {Abingdon}, issn = {1468-6996}, doi = {10.1080/14686996.2019.1633952}, pages = {786 -- 795}, year = {2019}, abstract = {The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C-60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from similar to 1.23 eV for the bare absorber, just similar to 90 meV below the radiative limit, to similar to 1.10 eV when C-60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of similar to 30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure. [GRAPHICS] .}, language = {en} } @article{SiniSchubertRiskoetal.2018, author = {Sini, Gjergji and Schubert, Marcel and Risko, Chad and Roland, Steffen and Lee, Olivia P. and Chen, Zhihua and Richter, Thomas V. and Dolfen, Daniel and Coropceanu, Veaceslav and Ludwigs, Sabine and Scherf, Ullrich and Facchetti, Antonio and Frechet, Jean M. J. and Neher, Dieter}, title = {On the Molecular Origin of Charge Separation at the Donor-Acceptor Interface}, series = {Advanced energy materials}, volume = {8}, journal = {Advanced energy materials}, number = {12}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.201702232}, pages = {15}, year = {2018}, abstract = {Fullerene-based acceptors have dominated organic solar cells for almost two decades. It is only within the last few years that alternative acceptors rival their dominance, introducing much more flexibility in the optoelectronic properties of these material blends. However, a fundamental physical understanding of the processes that drive charge separation at organic heterojunctions is still missing, but urgently needed to direct further material improvements. Here a combined experimental and theoretical approach is used to understand the intimate mechanisms by which molecular structure contributes to exciton dissociation, charge separation, and charge recombination at the donor-acceptor (D-A) interface. Model systems comprised of polythiophene-based donor and rylene diimide-based acceptor polymers are used and a detailed density functional theory (DFT) investigation is performed. The results point to the roles that geometric deformations and direct-contact intermolecular polarization play in establishing a driving force ( energy gradient) for the optoelectronic processes taking place at the interface. A substantial impact for this driving force is found to stem from polymer deformations at the interface, a finding that can clearly lead to new design approaches in the development of the next generation of conjugated polymers and small molecules.}, language = {en} } @article{FritschKurpiersRolandetal.2022, author = {Fritsch, Tobias and Kurpiers, Jona and Roland, Steffen and Tokmoldin, Nurlan and Shoaee, Safa and Ferron, Thomas and Collins, Brian A. and Janietz, Silvia and Vandewal, Koen and Neher, Dieter}, title = {On the interplay between CT and singlet exciton emission in organic solar cells with small driving force and its impact on voltage loss}, series = {Advanced energy materials}, volume = {12}, journal = {Advanced energy materials}, number = {31}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.202200641}, pages = {11}, year = {2022}, abstract = {The interplay between free charge carriers, charge transfer (CT) states and singlet excitons (S-1) determines the recombination pathway and the resulting open circuit voltage (V-OC) of organic solar cells. By combining a well-aggregated low bandgap polymer with different blend ratios of the fullerenes PCBM and ICBA, the energy of the CT state (E-CT) is varied by 130 meV while leaving the S-1 energy of the polymer (ES1\[{E_{{{\rm{S}}_1}}}\]) unaffected. It is found that the polymer exciton dominates the radiative properties of the blend when ECT\[{E_{{\rm{CT}}}}\] approaches ES1\[{E_{{{\rm{S}}_1}}}\], while the V-OC remains limited by the non-radiative decay of the CT state. It is concluded that an increasing strength of the exciton in the optical spectra of organic solar cells will generally decrease the non-radiative voltage loss because it lowers the radiative V-OC limit (V-OC,V-rad), but not because it is more emissive. The analysis further suggests that electronic coupling between the CT state and the S-1 will not improve the V-OC, but rather reduce the V-OC,V-rad. It is anticipated that only at very low CT state absorption combined with a fairly high CT radiative efficiency the solar cell benefit from the radiative properties of the singlet excitons.}, language = {en} } @article{AlbrechtSchindlerKurpiersetal.2012, author = {Albrecht, Steve and Schindler, Wolfram and Kurpiers, Jona and Kniepert, Juliane and Blakesley, James C. and Dumsch, Ines and Allard, Sybille and Fostiropoulos, Konstantinos and Scherf, Ullrich and Neher, Dieter}, title = {On the field dependence of free charge carrier generation and recombination in blends of PCPDTBT/PC70BM influence of solvent additives}, series = {The journal of physical chemistry letters}, volume = {3}, journal = {The journal of physical chemistry letters}, number = {5}, publisher = {American Chemical Society}, address = {Washington}, issn = {1948-7185}, doi = {10.1021/jz3000849}, pages = {640 -- 645}, year = {2012}, abstract = {We have applied time-delayed collection field (TDCF) and charge extraction by linearly increasing voltage (CELIV) to investigate the photogeneration, transport, and recombination of charge carriers in blends composed of PCPDTBT/PC70BM processed with and without the solvent additive diiodooctane. The results suggest that the solvent additive has severe impacts on the elementary processes involved in the photon to collected electron conversion in these blends. First, a pronounced field dependence of the free carrier generation is found for both blends, where the field dependence is stronger without the additive. Second, the fate of charge carriers in both blends can be described with a rather high bimolecular recombination coefficients, which increase with decreasing internal field. Third, the mobility is three to four times higher with the additive. Both blends show a negative field dependence of mobility, which we suggest to cause bias-dependent recombination coefficients.}, language = {en} } @article{AlbrechtVandewalTumblestonetal.2014, author = {Albrecht, Steve and Vandewal, Koen and Tumbleston, John R. and Fischer, Florian S. U. and Douglas, Jessica D. and Frechet, Jean M. J. and Ludwigs, Sabine and Ade, Harald W. and Salleo, Alberto and Neher, Dieter}, title = {On the efficiency of charge transfer state splitting in polymer: Fullerene solar cells}, series = {Advanced materials}, volume = {26}, journal = {Advanced materials}, number = {16}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {0935-9648}, doi = {10.1002/adma.201305283}, pages = {2533 -- 2539}, year = {2014}, language = {en} }