@article{HoermannZeiskeParketal.2019, author = {H{\"o}rmann, Ulrich and Zeiske, Stefan and Park, Soohyung and Schultz, Thorsten and Kickhoefel, Sebastian and Scherf, Ullrich and Blumstengel, Sylke and Koch, Norbert and Neher, Dieter}, title = {Direct observation of state-filling at hybrid tin oxide/organic interfaces}, series = {Applied physics letters}, volume = {114}, journal = {Applied physics letters}, number = {18}, publisher = {American Institute of Physics}, address = {Melville}, issn = {0003-6951}, doi = {10.1063/1.5082704}, pages = {5}, year = {2019}, abstract = {Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blue-shift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor. Published under license by AIP Publishing.}, language = {en} } @article{HofackerNeher2017, author = {Hofacker, Andreas and Neher, Dieter}, title = {Dispersive and steady-state recombination in organic disordered semiconductors}, series = {Physical review : B, Condensed matter and materials physics}, volume = {96}, journal = {Physical review : B, Condensed matter and materials physics}, publisher = {American Physical Society}, address = {College Park}, issn = {2469-9950}, doi = {10.1103/PhysRevB.96.245204}, pages = {11}, year = {2017}, abstract = {Charge carrier recombination in organic disordered semiconductors is strongly influenced by the thermalization of charge carriers in the density of states (DOS). Measurements of recombination dynamics, conducted under transient or steady-state conditions, can easily be misinterpreted when a detailed understanding of the interplay of thermalization and recombination is missing. To enable adequate measurement analysis, we solve the multiple-trapping problem for recombining charge carriers and analyze it in the transient and steady excitation paradigm for different DOS distributions. We show that recombination rates measured after pulsed excitation are inherently time dependent since recombination gradually slows down as carriers relax in the DOS. When measuring the recombination order after pulsed excitation, this leads to an apparent high-order recombination at short times. As times goes on, the recombination order approaches an asymptotic value. For the Gaussian and the exponential DOS distributions, this asymptotic value equals the recombination order of the equilibrated system under steady excitation. For a more general DOS distribution, the recombination order can also depend on the carrier density, under both transient and steady-state conditions. We conclude that transient experiments can provide rich information about recombination in and out of equilibrium and the underlying DOS occupation provided that consistent modeling of the system is performed.}, language = {en} } @article{HofackerNeher2017, author = {Hofacker, Andreas and Neher, Dieter}, title = {Dispersive and steady-state recombination in organic disordered semiconductors}, series = {Physical review : B, Condensed matter and materials physics}, volume = {96}, journal = {Physical review : B, Condensed matter and materials physics}, publisher = {American Physical Society}, address = {College Park}, issn = {2469-9950}, doi = {10.1103/PhysRevB.96.245204}, pages = {5640 -- 5649}, year = {2017}, abstract = {Charge carrier recombination in organic disordered semiconductors is strongly influenced by the thermalization of charge carriers in the density of states (DOS). Measurements of recombination dynamics, conducted under transient or steady-state conditions, can easily be misinterpreted when a detailed understanding of the interplay of thermalization and recombination is missing. To enable adequate measurement analysis, we solve the multiple-trapping problem for recombining charge carriers and analyze it in the transient and steady excitation paradigm for different DOS distributions. We show that recombination rates measured after pulsed excitation are inherently time dependent since recombination gradually slows down as carriers relax in the DOS. When measuring the recombination order after pulsed excitation, this leads to an apparent high-order recombination at short times. As times goes on, the recombination order approaches an asymptotic value. For the Gaussian and the exponential DOS distributions, this asymptotic value equals the recombination order of the equilibrated system under steady excitation. For a more general DOS distribution, the recombination order can also depend on the carrier density, under both transient and steady-state conditions. We conclude that transient experiments can provide rich information about recombination in and out of equilibrium and the underlying DOS occupation provided that consistent modeling of the system is performed.}, language = {en} } @article{KurpiersNeher2016, author = {Kurpiers, Jona and Neher, Dieter}, title = {Dispersive Non-Geminate Recombination in an Amorphous Polymer: Fullerene Blend}, series = {Scientific reports}, volume = {6}, journal = {Scientific reports}, publisher = {Nature Publ. Group}, address = {London}, issn = {2045-2322}, doi = {10.1038/srep26832}, pages = {10}, year = {2016}, abstract = {Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer: fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions.}, language = {en} } @misc{KurpiersNeher2016, author = {Kurpiers, Jona and Neher, Dieter}, title = {Dispersive Non-Geminate Recombination in an Amorphous Polymer:Fullerene Blend}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-91541}, pages = {10}, year = {2016}, abstract = {Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer:fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions.}, language = {en} } @article{KurpiersNeher2016, author = {Kurpiers, Jona and Neher, Dieter}, title = {Dispersive Non-Geminate Recombination in an Amorphous Polymer:Fullerene Blend}, series = {Scientific reports}, volume = {6}, journal = {Scientific reports}, publisher = {Nature Publishing Group}, address = {London}, issn = {2045-2322}, doi = {10.1038/srep26832}, pages = {10}, year = {2016}, abstract = {Recombination of free charge is a key process limiting the performance of solar cells. For low mobility materials, such as organic semiconductors, the kinetics of non-geminate recombination (NGR) is strongly linked to the motion of charges. As these materials possess significant disorder, thermalization of photogenerated carriers in the inhomogeneously broadened density of state distribution is an unavoidable process. Despite its general importance, knowledge about the kinetics of NGR in complete organic solar cells is rather limited. We employ time delayed collection field (TDCF) experiments to study the recombination of photogenerated charge in the high-performance polymer:fullerene blend PCDTBT:PCBM. NGR in the bulk of this amorphous blend is shown to be highly dispersive, with a continuous reduction of the recombination coefficient throughout the entire time scale, until all charge carriers have either been extracted or recombined. Rapid, contact-mediated recombination is identified as an additional loss channel, which, if not properly taken into account, would erroneously suggest a pronounced field dependence of charge generation. These findings are in stark contrast to the results of TDCF experiments on photovoltaic devices made from ordered blends, such as P3HT:PCBM, where non-dispersive recombination was proven to dominate the charge carrier dynamics under application relevant conditions.}, language = {en} } @article{EgbeCarbonnierPauletal.2005, author = {Egbe, D. A. M. and Carbonnier, B. and Paul, E. L. and Muhlbacher, D. and Kietzke, Thomas and Birckner, Eckhard and Neher, Dieter and Grummt, U. W. and Pakula, T.}, title = {Diyne-containing PPVs : Solid-state properties and comparison of their photophysical and electrochemical properties with those of their Yne-containing counterparts}, issn = {0024-9297}, year = {2005}, abstract = {Diyne-containing poly(p-phenylene-vinylene)s, 4a-d, of general chemical structure-(Ph-C\&3bond; C-C\&3bond; C-Ph- CH\&3bond; CH-Ph-CH\&3bond; CH-)(n), obtained through polycondensation reactions of 1,4-bis(4-formyl-2,5-dioctyloxyphenyl)- buta-1,3-diyne (2) with various 2,5-dialkoxy-p-xylylenebis(diethylphosphonates), 3a-d, are the subject of this report. The polymers exhibit great disparity in their degree of polymerization, n, which might be ascribed to side-chain-related differences in reactivity of the reactive species during the polycondensation process and which led to n-dependent absorption (solution and solid state) and emission (solution) behaviors of the polymers. Polarizing optical microscopy and differential scanning calorimetry are employed to probe their thermal behavior. The structure is investigated by means of wide-angle X-ray diffraction for both isotropic and macroscopically oriented samples. Comparison of photophysical (experimental and theoretical) and electrochemical properties of the polymers with those of their yne- containing counterparts 6a-d [-(Ph-C\&3bond; C-Ph-CH\&3bond; CH-Ph-CH\&3bond; CH-)(n)] has been carried out. Similar photophysical behavior was observed for both types of polymers despite the difference in backbone conjugation pattern. The introduction of a second yne unit in 4 lowers the HOMO and LUMO levels, thereby enhancing the electron affinity of polymers 4 compared to polymers 6. The "wider opening" introduced by the second yne unit facilitates moreover the movement of charges during the electrochemical processes leading to minimal discrepancy, Delta E-g between the optical and electrochemical band gap energies. Polymers 6, in contrast, show significant side-chain-dependent Delta E-g values. Low turn-on voltages between 2 and 3 V and maximal luminous efficiencies between 0.32 and 1.25 cd/A were obtained from LED devices of configuration ITO/PEDOT:PSS/polymer 4/Ca/Al}, language = {en} } @article{RivnaySteyrleuthnerJimisonetal.2011, author = {Rivnay, Jonathan and Steyrleuthner, Robert and Jimison, Leslie H. and Casadei, Alberto and Chen, Zhihua and Toney, Michael F. and Facchetti, Antonio and Neher, Dieter and Salleo, Alberto}, title = {Drastic control of texture in a high performance n-Type polymeric semiconductor and implications for charge transport}, series = {Macromolecules : a publication of the American Chemical Society}, volume = {44}, journal = {Macromolecules : a publication of the American Chemical Society}, number = {13}, publisher = {American Chemical Society}, address = {Washington}, issn = {0024-9297}, doi = {10.1021/ma200864s}, pages = {5246 -- 5255}, year = {2011}, abstract = {Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer [N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5\% face-on to 94.6\% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40\% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material.}, language = {en} } @article{LuDiPietroKoellnetal.2016, author = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter}, title = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends}, series = {Advanced electronic materials}, volume = {2}, journal = {Advanced electronic materials}, publisher = {Wiley-Blackwell}, address = {Hoboken}, issn = {2199-160X}, doi = {10.1002/aelm.201600267}, pages = {2344 -- 2351}, year = {2016}, abstract = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.}, language = {en} } @article{LiBenduhnQiaoetal.2019, author = {Li, Tian-yi and Benduhn, Johannes and Qiao, Zhi and Liu, Yuan and Li, Yue and Shivhare, Rishi and Jaiser, Frank and Wang, Pei and Ma, Jie and Zeika, Olaf and Neher, Dieter and Mannsfeld, Stefan C. B. and Ma, Zaifei and Vandewal, Koen and Leo, Karl}, title = {Effect of H- and J-Aggregation on the Photophysical and Voltage Loss of Boron Dipyrromethene Small Molecules in Vacuum-Deposited Organic Solar Cells}, series = {The journal of physical chemistry letters}, volume = {10}, journal = {The journal of physical chemistry letters}, number = {11}, publisher = {American Chemical Society}, address = {Washington}, issn = {1948-7185}, doi = {10.1021/acs.jpclett.9b01222}, pages = {2684 -- 2691}, year = {2019}, abstract = {An understanding of the factors limiting the open-circuit voltage (V-oc) and related photon energy loss mechanisms is critical to increase the power conversion efficiency (PCE) of small-molecule organic solar cells (OSCs), especially those with near-infrared (NIR) absorbers. In this work, two NIR boron dipyrromethene (BODIPY) molecules are characterized for application in planar (PHJ) and bulk (BHJ) heterojunction OSCs. When two H atoms are substituted by F atoms on the peripheral phenyl rings of the molecules, the molecular aggregation type in the thin film changes from the H-type to J-type. For PHJ devices, the nonradiative voltage loss of 0.35 V in the J-aggregated BODIPY is lower than that of 0.49 V in the H-aggregated device. In BHJ devices with a nonradiative voltage loss of 0.35 V, a PCE of 5.5\% is achieved with an external quantum efficiency (EQE) maximum of 68\% at 700 nm.}, language = {en} } @article{PingelSchwarzlNeher2012, author = {Pingel, P. and Schwarzl, R. and Neher, Dieter}, title = {Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)}, series = {Applied physics letters}, volume = {100}, journal = {Applied physics letters}, number = {14}, publisher = {American Institute of Physics}, address = {Melville}, issn = {0003-6951}, doi = {10.1063/1.3701729}, pages = {3}, year = {2012}, abstract = {Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F(4)TCNQ. We find that the hole density increases linearly with the F(4)TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bassler, Phys. Rev. B 72, 235202 (2005)]. We infer that the presence of ionized F(4)TCNQ molecules in the P3HT layer increases energetic disorder, which diminishes the carrier mobility.}, language = {en} } @article{ZenPflaumHirschmannetal.2004, author = {Zen, Achmad and Pflaum, J. and Hirschmann, S. and Zhuang, W. and Jaiser, Frank and Asawapirom, Udom and Rabe, J. P. and Scherf, Ullrich and Neher, Dieter}, title = {Effect of molecular weight and annealing of poly (3-hexylthiophene)s on the performance of organic field-effect transistors}, year = {2004}, abstract = {The optical, structural, and electrical properties of thin layers made from poly(3-hexylthiophene) (P3HT) samples of different molecular weights are presented. As reported in a previous paper by Kline et al., Adv. Mater 2003, 15, 1519, the mobilities of these layers are a strong function of the molecular weight, with the largest mobility found for the largest molecular weight. Atomic force microscopy studies reveal a complex polycrystalline morphology which changes considerably upon annealing. X-ray studies show the occurrence of a layered phase for all P3HT fractions, especially after annealing at 1.50 degreesC . However, there is no clear correlation between the differences in the transport properties and the data from structural investigations. In order to reveal the processes limiting the mobility in these layers, the transistor properties were investigated as a function of temperature. The mobility decreases continuously with increasing temperatures; with the same trend pronounced thermochromic effects of the P3HT films occur. Apparently, the polymer chains adopt a more twisted, disordered conformation at higher temperatures, leading to interchain transport barriers. We conclude that the backbone conformation of the majority of the bulk material rather than the crystallinity of the layer is the most crucial parameter controlling the charge transport in these P3HT layers. This interpretation is supported by the significant blue-shift of the solid-state absorption spectra with decreasing molecular weight, which is indicative of a larger distortion of the P3HT backbone in the low-molecular weight P3HT layers}, language = {en} } @article{KniepertLangeHeidbrinketal.2015, author = {Kniepert, Juliane and Lange, Ilja and Heidbrink, Jan and Kurpiers, Jona and Brenner, Thomas J. K. and Koster, L. Jan Anton and Neher, Dieter}, title = {Effect of Solvent Additive on Generation, Recombination, and Extraction in PTB7:PCBM Solar Cells: A Conclusive Experimental and Numerical Simulation Study}, series = {The journal of physical chemistry : C, Nanomaterials and interfaces}, volume = {119}, journal = {The journal of physical chemistry : C, Nanomaterials and interfaces}, number = {15}, publisher = {American Chemical Society}, address = {Washington}, issn = {1932-7447}, doi = {10.1021/jp512721e}, pages = {8310 -- 8320}, year = {2015}, abstract = {Time-delayed collection field (TDCF), bias-assisted charge extraction (BACE), and space charge-limited current (SCLC) measurements are combined with complete numerical device simulations to unveil the effect of the solvent additive 1,8-diiodooctane (DIO) on the performance of PTB7:PCBM bulk heterojunction solar cells. DIO is shown to increase the charge generation rate, reduce geminate and bimolecular recombination, and increase the electron mobility. In total, the reduction of loss currents by processing with the additive raises the power conversion efficiency of the PTB7:PCBM blend by a factor of almost three. The lower generation rates and higher geminate recombination losses in devices without DIO are consistent with a blend morphology comprising large fullerene clusters embedded within a PTB7-rich matrix, while the low electron mobility suggests that these fullerene clusters are themselves composed of smaller pure fullerene aggregates separated by disordered areas. Our device simulations show unambiguously that the effect of the additive on the shape of the currentvoltage curve (J-V) cannot be ascribed to the variation of only the mobility, the recombination, or the field dependence of generation. It is only when the changes of all three parameters are taken into account that the simulation matches the experimental J-V characteristics under all illumination conditions and for a wide range of voltages.}, language = {en} } @article{YuanZhangQiuetal.2022, author = {Yuan, Jun and Zhang, Chujun and Qiu, Beibei and Liu, Wei and So, Shu Kong and Mainville, Mathieu and Leclerc, Mario and Shoaee, Safa and Neher, Dieter and Zou, Yingping}, title = {Effects of energetic disorder in bulk heterojunction organic solar cells}, series = {Energy \& environmental science}, volume = {15}, journal = {Energy \& environmental science}, number = {7}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {1754-5692}, doi = {10.1039/d2ee00271j}, pages = {2806 -- 2818}, year = {2022}, abstract = {Organic solar cells (OSCs) have progressed rapidly in recent years through the development of novel organic photoactive materials, especially non-fullerene acceptors (NFAs). Consequently, OSCs based on state-of-the-art NFAs have reached significant milestones, such as similar to 19\% power conversion efficiencies (PCEs) and small energy losses (less than 0.5 eV). Despite these significant advances, understanding of the interplay between molecular structure and optoelectronic properties lags significantly behind. For example, despite the theoretical framework for describing the energetic disorder being well developed for the case of inorganic semiconductors, the question of the applicability of classical semiconductor theories in analyzing organic semiconductors is still under debate. A general observation in the inorganic field is that inorganic photovoltaic materials possessing a polycrystalline microstructure exhibit suppressed disorder properties and better charge carrier transport compared to their amorphous analogs. Accordingly, this principle extends to the organic semiconductor field as many organic photovoltaic materials are synthesized to pursue polycrystalline-like features. Yet, there appears to be sporadic examples that exhibit an opposite trend. However, full studies decoupling energetic disorder from aggregation effects have largely been left out. Hence, the potential role of the energetic disorder in OSCs has received little attention. Interestingly, recently reported state-of-the-art NFA-based devices could achieve a small energetic disorder and high PCE at the same time; and interest in this investigation related to the disorder properties in OSCs was revived. In this contribution, progress in terms of the correlation between molecular design and energetic disorder is reviewed together with their effects on the optoelectronic mechanism and photovoltaic performance. Finally, the specific challenges and possible solutions in reducing the energetic disorder of OSCs from the viewpoint of materials and devices are proposed.}, language = {en} } @article{GrischekCaprioglioZhangetal.2022, author = {Grischek, Max and Caprioglio, Pietro and Zhang, Jiahuan and Pena-Camargo, Francisco and Sveinbjornsson, Kari and Zu, Fengshuo and Menzel, Dorothee and Warby, Jonathan and Li, Jinzhao and Koch, Norbert and Unger, Eva and Korte, Lars and Neher, Dieter and Stolterfoht, Martin and Albrecht, Steve}, title = {Efficiency Potential and Voltage Loss of Inorganic CsPbI2Br Perovskite Solar Cells}, series = {Solar RRL}, volume = {6}, journal = {Solar RRL}, number = {11}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {2367-198X}, doi = {10.1002/solr.202200690}, pages = {12}, year = {2022}, abstract = {Inorganic perovskite solar cells show excellent thermal stability, but the reported power conversion efficiencies are still lower than for organic-inorganic perovskites. This is mainly caused by lower open-circuit voltages (V(OC)s). Herein, the reasons for the low V-OC in inorganic CsPbI2Br perovskite solar cells are investigated. Intensity-dependent photoluminescence measurements for different layer stacks reveal that n-i-p and p-i-n CsPbI2Br solar cells exhibit a strong mismatch between quasi-Fermi level splitting (QFLS) and V-OC. Specifically, the CsPbI2Br p-i-n perovskite solar cell has a QFLS-e center dot V-OC mismatch of 179 meV, compared with 11 meV for a reference cell with an organic-inorganic perovskite of similar bandgap. On the other hand, this study shows that the CsPbI2Br films with a bandgap of 1.9 eV have a very low defect density, resulting in an efficiency potential of 20.3\% with a MeO-2PACz hole-transporting layer and 20.8\% on compact TiO2. Using ultraviolet photoelectron spectroscopy measurements, energy level misalignment is identified as a possible reason for the QFLS-e center dot V-OC mismatch and strategies for overcoming this V-OC limitation are discussed. This work highlights the need to control the interfacial energetics in inorganic perovskite solar cells, but also gives promise for high efficiencies once this issue is resolved.}, language = {en} } @article{GehrigRolandHowardetal.2014, author = {Gehrig, Dominik W. and Roland, Steffen and Howard, Ian A. and Kamm, Valentin and Mangold, Hannah and Neher, Dieter and Laquai, Frederic}, title = {Efficiency-limiting processes in low-bandgap polymer:Perylene diimide photovoltaic blends}, series = {The journal of physical chemistry : C, Nanomaterials and interfaces}, volume = {118}, journal = {The journal of physical chemistry : C, Nanomaterials and interfaces}, number = {35}, publisher = {American Chemical Society}, address = {Washington}, issn = {1932-7447}, doi = {10.1021/jp503366m}, pages = {20077 -- 20085}, year = {2014}, abstract = {The charge generation and recombination processes following photo-excitation of a low-bandgap polymer:perylene diimide photovoltaic blend are investigated by transient absorption pump-probe spectroscopy covering a dynamic range from femto-to microseconds to get insight into the efficiency-limiting photophysical processes. The several tens of picoseconds, and its efficiency is only half of that in a polymer:fullerene photoinduced electron transfer from the polymer to the perylene acceptor takes up to blend. This reduces the short-circuit current. Time-delayed collection field experiments reveal that the subsequent charge separation is strongly field-dependent, limiting the fill factor and lowering the short-circuit current in polymer:PDI devices. Upon excitation of the acceptor in the low-bandgap polymer blend, the PDI exciton undergoes charge transfer on a time scale of several tens of picoseconds. However, a significant fraction of the charges generated at the interface are quickly lost because of fast geminate recombination. This reduces the short-circuit current even further, leading to a scenario in which only around 2596 of the initial photoexcitations generate free charges that can potentially contribute to the photocurrent. In summary, the key photophysical limitations of perylene diimide as an acceptor in low-bandgap polymer blends appear at the interface between the materials, with the kinetics of both charge generation and separation inhibited as compared to that of fullerenes.}, language = {en} } @article{DaeublerNeherRostetal.1999, author = {D{\"a}ubler, Thomas Karl and Neher, Dieter and Rost, H. and H{\"o}rhold, Hans-Heinrich}, title = {Efficient bulk photogeneration of charge carriers in arylamino-PPV polymer sandwich cells}, year = {1999}, language = {en} } @article{VandewalAlbrechtHokeetal.2014, author = {Vandewal, Koen and Albrecht, Steve and Hoke, Eric T. and Graham, Kenneth R. and Widmer, Johannes and Douglas, Jessica D. and Schubert, Marcel and Mateker, William R. and Bloking, Jason T. and Burkhard, George F. and Sellinger, Alan and Frechet, Jean M. J. and Amassian, Aram and Riede, Moritz K. and McGehee, Michael D. and Neher, Dieter and Salleo, Alberto}, title = {Efficient charge generation by relaxed charge-transfer states at organic interfaces}, series = {Nature materials}, volume = {13}, journal = {Nature materials}, number = {1}, publisher = {Nature Publ. Group}, address = {London}, issn = {1476-1122}, doi = {10.1038/NMAT3807}, pages = {63 -- 68}, year = {2014}, abstract = {carriers on illumination. Efficient organic solar cells require a high yield for this process, combined with a minimum of energy losses. Here, we investigate the role of the lowest energy emissive interfacial charge-transfer state (CT1) in the charge generation process. We measure the quantum yield and the electric field dependence of charge generation on excitation of the charge-transfer (CT) state manifold viaweakly allowed, low-energy optical transitions. For a wide range of photovoltaic devices based on polymer: fullerene, small-molecule:C-60 and polymer: polymer blends, our study reveals that the internal quantum efficiency (IQE) is essentially independent of whether or not D, A or CT states with an energy higher than that of CT1 are excited. The best materials systems show an IQE higher than 90\% without the need for excess electronic or vibrational energy.}, language = {en} } @article{BagnichUngerJaiseretal.2011, author = {Bagnich, Sergey A. and Unger, Th. and Jaiser, Frank and Neher, Dieter and Thesen, M. W. and Kr{\"u}ger, H.}, title = {Efficient green electrophosphorescence based on ambipolar nonconjugated polymers evaluation of transport and emission properties}, series = {Journal of applied physics}, volume = {110}, journal = {Journal of applied physics}, number = {3}, publisher = {American Institute of Physics}, address = {Melville}, issn = {0021-8979}, doi = {10.1063/1.3618681}, pages = {9}, year = {2011}, abstract = {New materials for polymer organic light-emitting diodes based on a polymer matrix doped with phosphorescent dyes are presented. The matrix system is based on a polystyrene backbone bearing either electron or hole transporting units at the 4-position of each repeat unit. Random copolymers and polymer blend systems of the homopolymers are prepared, both with 62 wt.\% electron transporting and 38 wt.\% hole transporting moieties. Adding a green electrophosphorescent dye to the polymer matrix leads to efficient electroluminescence with a maximum current efficiency of 35 cd/A and a maximum external quantum efficiency of up to 10\%. The mobilities of electrons and holes in the dye-doped copolymer, as measured by transient electroluminescence, are around 5 x 10(-5) and 5 x 10(-6) cm(2)/Vs, respectively, while the blend of the two homopolymers exhibits slightly lower mobilities of both types of carriers. Despite the pronounced imbalance of charge transport, the device performance is almost entirely limited by the phosphorescence efficiency of the dye, implying balanced flow of holes and electrons into the active region. Also, devices made with either the copolymer or the blend yielded very similar device efficiencies, despite the noticeable difference in electron and hole mobility. It is proposed that electrons are efficiently blocked at the interlayer and that the so-formed space charge assists the balanced injection of holes.}, language = {en} } @article{AlbrechtGrootoonkNeubertetal.2014, author = {Albrecht, Steve and Grootoonk, Bjorn and Neubert, Sebastian and Roland, Steffen and Wordenweber, Jan and Meier, Matthias and Schlatmann, Rutger and Gordijn, Aad and Neher, Dieter}, title = {Efficient hybrid inorganic/organic tandem solar cells with tailored recombination contacts}, series = {Solar energy materials \& solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion}, volume = {127}, journal = {Solar energy materials \& solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0927-0248}, doi = {10.1016/j.solmat.2014.04.020}, pages = {157 -- 162}, year = {2014}, abstract = {In this work, the authors present a 7.5\% efficient hybrid tandem solar cell with the bottom cell made of amorphous silicon and a Si-PCPDTBT:PC70BM bulk heterojunction top cell. Loss-free recombination contacts were realized by combing Al-doped ZnO with either the conducting polymer composite PEDOT:PSS or with a bilayer of ultrathin Al and MoO3. Optimization of these contacts results in tandem cells with high fill factors of 70\% and an open circuit voltage close to the sum of those of the sub-cells. This is the best efficiency reported for this type of hybrid tandem cell so far. Optical and electrical device modeling suggests that the efficiency can be increased to similar to 12\% on combining a donor polymer with suitable absorption onset with PCBM. We also describe proof-of-principle studies employing light trapping in hybrid tandem solar cells, suggesting that this device architecture has the potential to achieve efficiencies well above 12\%. (C) 2014 Elsevier B.V. All rights reserved.}, language = {en} }