@article{KalbitzFruebingGerhardetal.2011,
  author    = {Kalbitz, Rene and Fr{\"u}bing, Peter and Gerhard, Reimund and Taylor, D. M.},
  title     = {Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures},
  series = {Applied physics letters},
  volume    = {98},
  journal   = {Applied physics letters},
  number    = {3},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.3543632},
  pages     = {3},
  year      = {2011},
  abstract  = {Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.},
  language  = {en}
}