@article{MalyarSanterStetsyura2013,
  author    = {Malyar, Ivan V. and Santer, Svetlana and Stetsyura, Svetlana V.},
  title     = {The effect of illumination on the parameters of the polymer layer deposited from solution onto a semiconductor substrate},
  series = {Technical physics letters : letters to the Russian journal of applied physics},
  volume    = {39},
  journal   = {Technical physics letters : letters to the Russian journal of applied physics},
  number    = {7},
  publisher = {Pleiades Publ.},
  address   = {New York},
  issn      = {1063-7850},
  doi       = {10.1134/S1063785013070183},
  pages     = {656 -- 659},
  year      = {2013},
  abstract  = {The effect of illumination on the thickness and roughness of monolayers of polycationic molecules of polyethyleneimine deposited from solution onto a silicon substrate was discovered and investigated. The super-bandgap illumination of the substrate during polyethyleneimine adsorption causes a decrease in both the roughness and integral thickness of the organic layer on n- and p-Si substrates.},
  language  = {en}
}
@article{MalyarGorinSanteretal.2017,
  author    = {Malyar, Ivan V. and Gorin, Dmitry A. and Santer, Svetlana and Stetsyura, Svetlana V.},
  title     = {Photo-assisted adsorption of gold nanoparticles onto a silicon substrate},
  series = {Applied physics letters},
  volume    = {110},
  journal   = {Applied physics letters},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.4979082},
  pages     = {4},
  year      = {2017},
  abstract  = {We report on a photo-assisted adsorption of gold nanoparticles on a silicon substrate studied using atomic-force microscopy and secondary ion mass-spectrometry. Depending on a silicon conductivity type (n-Si or p-Si), the amount of photo-assisted adsorbed gold nanoparticles either increases (n-Si) or decreases (p-Si) on irradiation. In addition, the impacts of a cationic polyelectrolyte monolayer and adsorption time were also revealed. The polyelectrolyte layer enhances the adsorption of the gold nanoparticles but decreases the influence of light. The results of the photo-assisted adsorption on two types of silicon wafer were explained by electron processes at the substrate/solution interface. This work was supported by the German-Russian Interdisciplinary Science Center (G-RISC) funded by the German Federal Foreign Office via the German Academic Exchange Service (DAAD), Project No. P-2014b-1, and Russian foundation for basic research, Project No. 16-08-00524_a.},
  language  = {en}
}
@article{MalyarGorinSanteretal.2013,
  author    = {Malyar, Ivan V. and Gorin, Dmitry A. and Santer, Svetlana and Stetsyura, Svetlana V.},
  title     = {Photocontrolled Adsorption of Polyelectrolyte Molecules on a Silicon Substrate},
  series = {Langmuir},
  volume    = {29},
  journal   = {Langmuir},
  number    = {32},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0743-7463},
  doi       = {10.1021/1a403838n},
  pages     = {16058 -- 16065},
  year      = {2013},
  abstract  = {We report on a change in the properties of monomolecular films of polyelectrolyte molecules, induced by illuminating the silicon substrate on which they adsorb. It was found that under illumination the thickness of the adsorbed layer decreases by at least 27\% and at the same time the roughness is significantly reduced in comparison to a layer adsorbed without irradiation. Furthermore, the homogeneity of the film topography and the surface potential is shown to be improved by illumination. The effect is explained by a change in surface charge density under irradiation of n- and p-type silicon wafers. The altered charge density in turn induces conformational changes of the adsorbing polyelectrolyte molecules. Their photocontrolled adsorption opens new possibilities for selective manipulation of adsorbed films. This possibility is of potential importance for many applications such as the production of well-defined coatings in biosensors or microelectronics.},
  language  = {en}
}
@article{MalyarGorinStetsyuraetal.2012,
  author    = {Malyar, I. V. and Gorin, D. A. and Stetsyura, S. V. and Santer, Svetlana},
  title     = {Effect of a nanodimensional polyethylenimine layer on current-voltage characteristics of hybrid structures based on single-crystal silicon},
  series = {Journal of electronic materials},
  volume    = {41},
  journal   = {Journal of electronic materials},
  number    = {12},
  publisher = {Springer},
  address   = {New York},
  issn      = {0361-5235},
  doi       = {10.1007/s11664-012-2266-4},
  pages     = {3427 -- 3435},
  year      = {2012},
  abstract  = {In this paper the study of the tunneling current-voltage (I-V) characteristics of silicon surfaces with n- and p-type conductivity as a function of roughness in the presence of an adsorbed insulating layer of polyethylenimine (PEI) is presented. A new approach is proposed for analysis of the tunnel current-voltage characteristics of a metal-insulator-semiconductor structure based on the combination of two models (Simmons and Schottky). Such joint analysis demonstrates the effect of surface states and evaluates changes in the band bending and electron affinity after the deposition of the polyelectrolyte layer on the semiconductor surface. As a result, we are able to differentiate between the equilibrium tunnel barrier (q phi (0)) and the barrier height (q phi (B)). It is shown that the deposition of the polymer leads to an increase of the equilibrium tunnel barrier by more than 250 meV, irrespective of the roughness and the conductivity type of the silicon substrate. The PEI deposition also leads to changes in the barrier height (less than 25 meV) that are smaller than the equilibrium tunnel barrier changes, indicating pinning of the Fermi level by the electron surface states that are energetically close to it. These surface states can trap charge carriers, a process leading to the formation of a depletion region and band bending on the semiconductor surface. Moreover, the change in the barrier height q Delta phi (B) depends on the conductivity type of the semiconductor, being positive for n-type and negative for p-type, in contrast to q Delta phi (0), which is positive for all substrates. The change is explained by capture of electrons preferably from the semiconductor space-charge region in the presence of a cationic polyelectrolyte, e.g., PEI.},
  language  = {en}
}