@article{AndjelkovicSimevskiChenetal.2022, author = {Andjelkovic, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenkovic, Zoran and Krstić, Miloš and Ilic, Stefan and Ristic, Goran and Jaksic, Aleksandar and Vasovic, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.}, title = {A design concept for radiation hardened RADFET readout system for space applications}, series = {Microprocessors and microsystems}, volume = {90}, journal = {Microprocessors and microsystems}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0141-9331}, doi = {10.1016/j.micpro.2022.104486}, pages = {18}, year = {2022}, abstract = {Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.}, language = {en} } @article{RisticIlicAndjelkovicetal.2022, author = {Ristic, Goran S. and Ilic, Stefan D. and Andjelkovic, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksic, Aleksandar B.}, title = {Sensitivity and fading of irradiated RADFETs with different gate voltages}, series = {Nuclear Instruments and Methods in Physics Research Section A}, volume = {1029}, journal = {Nuclear Instruments and Methods in Physics Research Section A}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0168-9002}, doi = {10.1016/j.nima.2022.166473}, pages = {7}, year = {2022}, abstract = {The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.}, language = {en} } @book{RanaMohapatraSidorovaetal.2022, author = {Rana, Kaushik and Mohapatra, Durga Prasad and Sidorova, Julia and Lundberg, Lars and Sk{\"o}ld, Lars and Lopes Grim, Lu{\´i}s Fernando and Sampaio Gradvohl, Andr{\´e} Leon and Cremerius, Jonas and Siegert, Simon and Weltzien, Anton von and Baldi, Annika and Klessascheck, Finn and Kalancha, Svitlana and Lichtenstein, Tom and Shaabani, Nuhad and Meinel, Christoph and Friedrich, Tobias and Lenzner, Pascal and Schumann, David and Wiese, Ingmar and Sarna, Nicole and Wiese, Lena and Tashkandi, Araek Sami and van der Walt, Est{\´e}e and Eloff, Jan H. P. and Schmidt, Christopher and H{\"u}gle, Johannes and Horschig, Siegfried and Uflacker, Matthias and Najafi, Pejman and Sapegin, Andrey and Cheng, Feng and Stojanovic, Dragan and Stojnev Ilić, Aleksandra and Djordjevic, Igor and Stojanovic, Natalija and Predic, Bratislav and Gonz{\´a}lez-Jim{\´e}nez, Mario and de Lara, Juan and Mischkewitz, Sven and Kainz, Bernhard and van Hoorn, Andr{\´e} and Ferme, Vincenzo and Schulz, Henning and Knigge, Marlene and Hecht, Sonja and Prifti, Loina and Krcmar, Helmut and Fabian, Benjamin and Ermakova, Tatiana and Kelkel, Stefan and Baumann, Annika and Morgenstern, Laura and Plauth, Max and Eberhard, Felix and Wolff, Felix and Polze, Andreas and Cech, Tim and Danz, Noel and Noack, Nele Sina and Pirl, Lukas and Beilharz, Jossekin Jakob and De Oliveira, Roberto C. L. and Soares, F{\´a}bio Mendes and Juiz, Carlos and Bermejo, Belen and M{\"u}hle, Alexander and Gr{\"u}ner, Andreas and Saxena, Vageesh and Gayvoronskaya, Tatiana and Weyand, Christopher and Krause, Mirko and Frank, Markus and Bischoff, Sebastian and Behrens, Freya and R{\"u}ckin, Julius and Ziegler, Adrian and Vogel, Thomas and Tran, Chinh and Moser, Irene and Grunske, Lars and Sz{\´a}rnyas, G{\´a}bor and Marton, J{\´o}zsef and Maginecz, J{\´a}nos and Varr{\´o}, D{\´a}niel and Antal, J{\´a}nos Benjamin}, title = {HPI Future SOC Lab - Proceedings 2018}, number = {151}, editor = {Meinel, Christoph and Polze, Andreas and Beins, Karsten and Strotmann, Rolf and Seibold, Ulrich and R{\"o}dszus, Kurt and M{\"u}ller, J{\"u}rgen}, publisher = {Universit{\"a}tsverlag Potsdam}, address = {Potsdam}, isbn = {978-3-86956-547-7}, issn = {1613-5652}, doi = {10.25932/publishup-56371}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-563712}, publisher = {Universit{\"a}t Potsdam}, pages = {x, 277}, year = {2022}, abstract = {The "HPI Future SOC Lab" is a cooperation of the Hasso Plattner Institute (HPI) and industry partners. Its mission is to enable and promote exchange and interaction between the research community and the industry partners. The HPI Future SOC Lab provides researchers with free of charge access to a complete infrastructure of state of the art hard and software. This infrastructure includes components, which might be too expensive for an ordinary research environment, such as servers with up to 64 cores and 2 TB main memory. The offerings address researchers particularly from but not limited to the areas of computer science and business information systems. Main areas of research include cloud computing, parallelization, and In-Memory technologies. This technical report presents results of research projects executed in 2018. Selected projects have presented their results on April 17th and November 14th 2017 at the Future SOC Lab Day events.}, language = {en} }