@article{SteyrleuthnerDiPietroCollinsetal.2014,
  author    = {Steyrleuthner, Robert and Di Pietro, Riccardo and Collins, Brian A. and Polzer, Frank and Himmelberger, Scott and Schubert, Marcel and Chen, Zhihua and Zhang, Shiming and Salleo, Alberto and Ade, Harald W. and Facchetti, Antonio and Neher, Dieter},
  title     = {The Role of Regioregularity, Crystallinity, and Chain Orientation on Electron Transport in a High-Mobility n-Type Copolymer},
  series = {Journal of the American Chemical Society},
  volume    = {136},
  journal   = {Journal of the American Chemical Society},
  number    = {11},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0002-7863},
  doi       = {10.1021/ja4118736},
  pages     = {4245 -- 4256},
  year      = {2014},
  language  = {en}
}
@article{LuBlakesleyHimmelbergeretal.2013,
  author    = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter},
  title     = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors},
  series = {Nature Communications},
  volume    = {4},
  journal   = {Nature Communications},
  number    = {1-2},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/ncomms2587},
  pages     = {8},
  year      = {2013},
  abstract  = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.},
  language  = {en}
}
@article{LuDiPietroKoellnetal.2016,
  author    = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter},
  title     = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends},
  series = {Advanced electronic materials},
  volume    = {2},
  journal   = {Advanced electronic materials},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.201600267},
  pages     = {2344 -- 2351},
  year      = {2016},
  abstract  = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.},
  language  = {en}
}