@phdthesis{Mandal2020,
  author    = {Mandal, Partha Sarathi},
  title     = {Controlling the surface band gap in topological states of matter},
  doi       = {10.25932/publishup-48045},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-480459},
  school      = {Universit{\"a}t Potsdam},
  pages     = {122},
  year      = {2020},
  abstract  = {In the present study, we employ the angle-resolved photoemission spectroscopy (ARPES) technique to study the electronic structure of topological states of matter. In particular, the so-called topological crystalline insulators (TCIs) Pb1-xSnxSe and Pb1-xSnxTe, and the Mn-doped Z2 topological insulators (TIs) Bi2Te3 and Bi2Se3. The Z2 class of strong topological insulators is protected by time-reversal symmetry and is characterized by an odd number of metallic Dirac type surface states in the surface Brillouin zone. The topological crystalline insulators on the other hand are protected by the individual crystal symmetries and exhibit an even number of Dirac cones. The topological properties of the lead tin chalcogenides topological crystalline insulators can be tuned by temperature and composition. Here, we demonstrate that Bi-doping of the Pb1-xSnxSe(111) epilayers induces a quantum phase transition from a topological crystalline insulator to a Z2 topological insulator. This occurs because Bi-doping lifts the fourfold valley degeneracy in the bulk. As a consequence a gap appears at ⌈¯, while the three Dirac cones at the M̅ points of the surface Brillouin zone remain intact. We interpret this new phase transition is caused by lattice distortion. Our findings extend the topological phase diagram enormously and make strong topological insulators switchable by distortions or electric field. In contrast, the bulk Bi doping of epitaxial Pb1-xSnxTe(111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface. Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provide quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point which has not been experimentally observed to date. Our low temperature ARPES studies unambiguously reveal the magnetic gap of Mn-doped Bi2Te3. Our analysis shows a five times larger gap size below the Tc than theoretically predicted. We assign this enhancement to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, a self-organized alternating sequence of MnBi2Te4 septuple and Bi2Te3quintuple layers is formed. This enhances the wave-function overlap and gives rise to a large magnetic gap. Mn-doped Bi2Se3 forms similar heterostructure, but only a nonmagnetic gap is observed in this system. This correlates with the difference in magnetic anisotropy due to the much larger spin-orbit interaction in Bi2Te3 compared to Bi2Se3. These findings provide crucial insights for pushing lossless transport in topological insulators towards room-temperature applications.},
  language  = {en}
}
@article{RienksWimmerSanchezBarrigaetal.2019,
  author    = {Rienks, Emile D. L. and Wimmer, S. and Sanchez-Barriga, Jaime and Caha, O. and Mandal, Partha Sarathi and Ruzicka, J. and Ney, A. and Steiner, H. and Volobuev, V. V. and Groiss, H. and Albu, M. and Kothleitner, G. and Michalicka, J. and Khan, S. A. and Minar, J. and Ebert, H. and Bauer, G. and Freyse, Friedrich and Varykhalov, Andrei and Rader, Oliver and Springholz, Gunther},
  title     = {Large magnetic gap at the Dirac point in Bi2Te3/MnBi2Te4 heterostructures},
  series = {Nature : the international weekly journal of science},
  volume    = {576},
  journal   = {Nature : the international weekly journal of science},
  number    = {7787},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {0028-0836},
  doi       = {10.1038/s41586-019-1826-7},
  pages     = {423 -- 428},
  year      = {2019},
  abstract  = {Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE), which provides quantized edge states for lossless charge-transport applications(1-8). The edge states are hosted by a magnetic energy gap at the Dirac point(2), but hitherto all attempts to observe this gap directly have been unsuccessful. Observing the gap is considered to be essential to overcoming the limitations of the QAHE, which so far occurs only at temperatures that are one to two orders of magnitude below the ferromagnetic Curie temperature, T-C (ref. (8)). Here we use low-temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi2Te3, which displays ferromagnetic out-of-plane spin texture and opens up only below T-C. Surprisingly, our analysis reveals large gap sizes at 1 kelvin of up to 90 millielectronvolts, which is five times larger than theoretically predicted(9). Using multiscale analysis we show that this enhancement is due to a remarkable structure modification induced by Mn doping: instead of a disordered impurity system, a self-organized alternating sequence of MnBi2Te4 septuple and Bi2Te3 quintuple layers is formed. This enhances the wavefunction overlap and size of the magnetic gap(10). Mn-doped Bi2Se3 (ref. (11)) and Mn-doped Sb2Te3 form similar heterostructures, but for Bi2Se3 only a nonmagnetic gap is formed and the magnetization is in the surface plane. This is explained by the smaller spin-orbit interaction by comparison with Mn-doped Bi2Te3. Our findings provide insights that will be crucial in pushing lossless transport in topological insulators towards room-temperature applications.},
  language  = {en}
}