@article{RubenssonSoderstromBinggelietal.2015,
  author    = {Rubensson, Jan-Erik and Soderstrom, Johan and Binggeli, Christian and Grasjo, Joakim and Andersson, Johan and Sathe, Conny and Hennies, Franz and Bisogni, Valentina and Huang, Yaobo and Olalde, Paul and Schmitt, Thorsten and Strocov, Vladimir N. and F{\"o}hlisch, Alexander and Kennedy, Brian and Pietzsch, Annette},
  title     = {Rydberg-Resolved Resonant Inelastic Soft X-Ray Scattering: Dynamics at Core Ionization Thresholds},
  series = {Physical review letters},
  volume    = {114},
  journal   = {Physical review letters},
  number    = {13},
  publisher = {American Physical Society},
  address   = {College Park},
  issn      = {0031-9007},
  doi       = {10.1103/PhysRevLett.114.133001},
  pages     = {5},
  year      = {2015},
  abstract  = {Resonant inelastic x-ray scattering spectra excited in the immediate vicinity of the core-level ionization thresholds of N-2 have been recorded. Final states of well-resolved symmetry-selected Rydberg series converging to valence-level ionization thresholds with vibrational excitations are observed. The results are well described by a quasi-two-step model which assumes that the excited electron is unaffected by the radiative decay. This threshold dynamics simplifies the interpretation of resonant inelastic x-ray scattering spectra considerably and facilitates characterization of low-energy excited final states in molecular systems.},
  language  = {en}
}
@article{ArhammarPietzschBocketal.2011,
  author    = {Arhammar, C. and Pietzsch, Annette and Bock, Nicolas and Holmstroem, Erik and Araujo, C. Moyses and Grasjo, Johan and Zhao, Shuxi and Green, Sara and Peery, T. and Hennies, Franz and Amerioun, Shahrad and F{\"o}hlisch, Alexander and Schlappa, Justine and Schmitt, Thorsten and Strocov, Vladimir N. and Niklasson, Gunnar A. and Wallace, Duane C. and Rubensson, Jan-Erik and Johansson, Borje and Ahuja, Rajeev C.},
  title     = {Unveiling the complex electronic structure of amorphous metal oxides},
  series = {Proceedings of the National Academy of Sciences of the United States of America},
  volume    = {108},
  journal   = {Proceedings of the National Academy of Sciences of the United States of America},
  number    = {16},
  publisher = {National Acad. of Sciences},
  address   = {Washington},
  issn      = {0027-8424},
  doi       = {10.1073/pnas.1019698108},
  pages     = {6355 -- 6360},
  year      = {2011},
  abstract  = {Amorphous materials represent a large and important emerging area of material's science. Amorphous oxides are key technological oxides in applications such as a gate dielectric in Complementary metal-oxide semiconductor devices and in Silicon-Oxide-Nitride-Oxide-Silicon and TANOS (TaN-Al2O3-Si3N4-SiO2-Silicon) flash memories. These technologies are required for the high packing density of today's integrated circuits. Therefore the investigation of defect states in these structures is crucial. In this work we present X-ray synchrotron measurements, with an energy resolution which is about 5-10 times higher than is attainable with standard spectrometers, of amorphous alumina. We demonstrate that our experimental results are in agreement with calculated spectra of amorphous alumina which we have generated by stochastic quenching. This first principles method, which we have recently developed, is found to be superior to molecular dynamics in simulating the rapid gas to solid transition that takes place as this material is deposited for thin film applications. We detect and analyze in detail states in the band gap that originate from oxygen pairs. Similar states were previously found in amorphous alumina by other spectroscopic methods and were assigned to oxygen vacancies claimed to act mutually as electron and hole traps. The oxygen pairs which we probe in this work act as hole traps only and will influence the information retention in electronic devices. In amorphous silica oxygen pairs have already been found, thus they may be a feature which is characteristic also of other amorphous metal oxides.},
  language  = {en}
}