@article{HesseKlierSgarzietal.2018,
  author    = {Hesse, Julia and Klier, Dennis Tobias and Sgarzi, Massimo and Nsubuga, Anne and Bauer, Christoph and Grenzer, Joerg and H{\"u}bner, Rene and Wislicenus, Marcus and Joshi, Tanmaya and Kumke, Michael Uwe and Stephan, Holger},
  title     = {Rapid Synthesis of Sub-10nm Hexagonal NaYF4-Based Upconverting Nanoparticles using Therminol((R))66},
  series = {ChemistryOpen : including thesis treasury},
  volume    = {7},
  journal   = {ChemistryOpen : including thesis treasury},
  number    = {2},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {2191-1363},
  doi       = {10.1002/open.201700186},
  pages     = {159 -- 168},
  year      = {2018},
  abstract  = {We report a simple one-pot method for the rapid preparation of sub-10nm pure hexagonal (-phase) NaYF4-based upconverting nanoparticles (UCNPs). Using Therminol((R))66 as a co-solvent, monodisperse UCNPs could be obtained in unusually short reaction times. By varying the reaction time and reaction temperature, it was possible to control precisely the particle size and crystalline phase of the UCNPs. The upconversion (UC) luminescence properties of the nanocrystals were tuned by varying the concentrations of the dopants (Nd3+ and Yb3+ sensitizer ions and Er3+ activator ions). The size and phase-purity of the as-synthesized core and core-shell nanocrystals were assessed by using complementary transmission electron microscopy, dynamic light scattering, X-ray diffraction, and small-angle X-ray scattering studies. In-depth photophysical evaluation of the UCNPs was pursued by using steady-state and time-resolved luminescence spectroscopy. An enhancement in the UC intensity was observed if the nanocrystals, doped with optimized concentrations of lanthanide sensitizer/activator ions, were further coated with an inert/active shell. This was attributed to the suppression of surface-related luminescence quenching effects.},
  language  = {en}
}
@article{ZeimerPietschGrenzeretal.2005,
  author    = {Zeimer, Ute and Pietsch, Ullrich and Grenzer, Joerg and Fricke, J. and Knauer, A. and Weyers, Markus},
  title     = {Optimised two layer overgrowth of a lateral strain-modulated nanostructure},
  issn      = {0925-8388},
  year      = {2005},
  abstract  = {Recently it has been shown that lateral carrier confinement in an InGaAs quantum well (QW) embedded in GaAs can be achieved by using a laterally patterned InGaP stressor layer on top of the heterostructure. To exploit this effect in a device the structure has to be planarized by a second epitaxial step. It has been shown that the lateral strain modulation almost vanishes after overgrowth with GaAs, whereas overgrowth with a single ternary layer of opposite strain compared to the stressor layer suffers from strain induced decomposition. Here we show that the lateral carrier confinement of the initially free standing nanostructure can almost be maintained using a two step process for overgrowth, where a strained thin ternary layer is grown first followed by GaAs up to complete planarization of the patterned structure. Thickness and composition of the ternary layer are adjusted on the basis of finite element calculations of the strain distribution (FEM). The strain field achieved after overgrowth is probed by X-ray grazing- incidence diffraction (GID). (c) 2005 Elsevier B.V. All rights reserved},
  language  = {en}
}