@article{ChenLangeAndjelkovicetal.2020, author = {Chen, Junchao and Lange, Thomas and Andjelkovic, Milos and Simevski, Aleksandar and Krstić, Miloš}, title = {Prediction of solar particle events with SRAM-based soft error rate monitor and supervised machine learning}, series = {Microelectronics reliability}, volume = {114}, journal = {Microelectronics reliability}, publisher = {Elsevier}, address = {Oxford}, issn = {0026-2714}, doi = {10.1016/j.microrel.2020.113799}, pages = {6}, year = {2020}, abstract = {This work introduces an embedded approach for the prediction of Solar Particle Events (SPEs) in space applications by combining the real-time Soft Error Rate (SER) measurement with SRAM-based detector and the offline trained machine learning model. The proposed approach is intended for the self-adaptive fault-tolerant multiprocessing systems employed in space applications. With respect to the state-of-the-art, our solution allows for predicting the SER 1 h in advance and fine-grained hourly tracking of SER variations during SPEs as well as under normal conditions. Therefore, the target system can activate the appropriate mechanisms for radiation hardening before the onset of high radiation levels. Based on the comparison of five different machine learning algorithms trained with the public space flux database, the preliminary results indicate that the best prediction accuracy is achieved with the recurrent neural network (RNN) with long short-term memory (LSTM).}, language = {en} } @article{ChenLangeAndjelkovicetal.2022, author = {Chen, Junchao and Lange, Thomas and Andjelkovic, Marko and Simevski, Aleksandar and Lu, Li and Krstić, Miloš}, title = {Solar particle event and single event upset prediction from SRAM-based monitor and supervised machine learning}, series = {IEEE transactions on emerging topics in computing / IEEE Computer Society, Institute of Electrical and Electronics Engineers}, volume = {10}, journal = {IEEE transactions on emerging topics in computing / IEEE Computer Society, Institute of Electrical and Electronics Engineers}, number = {2}, publisher = {Institute of Electrical and Electronics Engineers}, address = {[New York, NY]}, issn = {2168-6750}, doi = {10.1109/TETC.2022.3147376}, pages = {564 -- 580}, year = {2022}, abstract = {The intensity of cosmic radiation may differ over five orders of magnitude within a few hours or days during the Solar Particle Events (SPEs), thus increasing for several orders of magnitude the probability of Single Event Upsets (SEUs) in space-borne electronic systems. Therefore, it is vital to enable the early detection of the SEU rate changes in order to ensure timely activation of dynamic radiation hardening measures. In this paper, an embedded approach for the prediction of SPEs and SRAM SEU rate is presented. The proposed solution combines the real-time SRAM-based SEU monitor, the offline-trained machine learning model and online learning algorithm for the prediction. With respect to the state-of-the-art, our solution brings the following benefits: (1) Use of existing on-chip data storage SRAM as a particle detector, thus minimizing the hardware and power overhead, (2) Prediction of SRAM SEU rate one hour in advance, with the fine-grained hourly tracking of SEU variations during SPEs as well as under normal conditions, (3) Online optimization of the prediction model for enhancing the prediction accuracy during run-time, (4) Negligible cost of hardware accelerator design for the implementation of selected machine learning model and online learning algorithm. The proposed design is intended for a highly dependable and self-adaptive multiprocessing system employed in space applications, allowing to trigger the radiation mitigation mechanisms before the onset of high radiation levels.}, language = {en} } @article{AndjelkovićChenSimevskietal.2021, author = {Andjelković, Marko and Chen, Junchao and Simevski, Aleksandar and Schrape, Oliver and Krstić, Miloš and Kraemer, Rolf}, title = {Monitoring of particle count rate and LET variations with pulse stretching inverters}, series = {IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society}, volume = {68}, journal = {IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society}, number = {8}, publisher = {Institute of Electrical and Electronics Engineers}, address = {New York, NY}, issn = {0018-9499}, doi = {10.1109/TNS.2021.3076400}, pages = {1772 -- 1781}, year = {2021}, abstract = {This study investigates the use of pulse stretching (skew-sized) inverters for monitoring the variation of count rate and linear energy transfer (LET) of energetic particles. The basic particle detector is a cascade of two pulse stretching inverters, and the required sensing area is obtained by connecting up to 12 two-inverter cells in parallel and employing the required number of parallel arrays. The incident particles are detected as single-event transients (SETs), whereby the SET count rate denotes the particle count rate, while the SET pulsewidth distribution depicts the LET variations. The advantage of the proposed solution is the possibility to sense the LET variations using fully digital processing logic. SPICE simulations conducted on IHP's 130-nm CMOS technology have shown that the SET pulsewidth varies by approximately 550 ps over the LET range from 1 to 100 MeV center dot cm(2) center dot mg(-1). The proposed detector is intended for triggering the fault-tolerant mechanisms within a self-adaptive multiprocessing system employed in space. It can be implemented as a standalone detector or integrated in the same chip with the target system.}, language = {en} } @article{SchrapeAndjelkovicBreitenreiteretal.2021, author = {Schrape, Oliver and Andjelkovic, Marko and Breitenreiter, Anselm and Zeidler, Steffen and Balashov, Alexey and Krstić, Miloš}, title = {Design and evaluation of radiation-hardened standard cell flip-flops}, series = {IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society: 1, Regular papers}, volume = {68}, journal = {IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society: 1, Regular papers}, number = {11}, publisher = {Inst. of Electr. and Electronics Engineers}, address = {New York, NY}, issn = {1549-8328}, doi = {10.1109/TCSI.2021.3109080}, pages = {4796 -- 4809}, year = {2021}, abstract = {Use of a standard non-rad-hard digital cell library in the rad-hard design can be a cost-effective solution for space applications. In this paper we demonstrate how a standard non-rad-hard flip-flop, as one of the most vulnerable digital cells, can be converted into a rad-hard flip-flop without modifying its internal structure. We present five variants of a Triple Modular Redundancy (TMR) flip-flop: baseline TMR flip-flop, latch-based TMR flip-flop, True-Single Phase Clock (TSPC) TMR flip-flop, scannable TMR flip-flop and self-correcting TMR flipflop. For all variants, the multi-bit upsets have been addressed by applying special placement constraints, while the Single Event Transient (SET) mitigation was achieved through the usage of customized SET filters and selection of optimal inverter sizes for the clock and reset trees. The proposed flip-flop variants feature differing performance, thus enabling to choose the optimal solution for every sensitive node in the circuit, according to the predefined design constraints. Several flip-flop designs have been validated on IHP's 130nm BiCMOS process, by irradiation of custom-designed shift registers. It has been shown that the proposed TMR flip-flops are robust to soft errors with a threshold Linear Energy Transfer (LET) from (32.4 MeV.cm(2)/mg) to (62.5 MeV.cm(2)/mg), depending on the variant.}, language = {en} } @misc{AndjelkovicBabicLietal.2019, author = {Andjelkovic, Marko and Babic, Milan and Li, Yuanqing and Schrape, Oliver and Krstić, Miloš and Kraemer, Rolf}, title = {Use of decoupling cells for mitigation of SET effects in CMOS combinational gates}, series = {2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)}, journal = {2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)}, publisher = {IEEE}, address = {New York}, isbn = {978-1-5386-9562-3}, doi = {10.1109/ICECS.2018.8617996}, pages = {361 -- 364}, year = {2019}, abstract = {This paper investigates the applicability of CMOS decoupling cells for mitigating the Single Event Transient (SET) effects in standard combinational gates. The concept is based on the insertion of two decoupling cells between the gate's output and the power/ground terminals. To verify the proposed hardening approach, extensive SPICE simulations have been performed with standard combinational cells designed in IHP's 130 nm bulk CMOS technology. Obtained simulation results have shown that the insertion of decoupling cells results in the increase of the gate's critical charge, thus reducing the gate's soft error rate (SER). Moreover, the decoupling cells facilitate the suppression of SET pulses propagating through the gate. It has been shown that the decoupling cells may be a competitive alternative to gate upsizing and gate duplication for hardening the gates with lower critical charge and multiple (3 or 4) inputs, as well as for filtering the short SET pulses induced by low-LET particles.}, language = {en} } @article{BreitenreiterAndjelkovićSchrapeetal.2022, author = {Breitenreiter, Anselm and Andjelković, Marko and Schrape, Oliver and Krstić, Miloš}, title = {Fast error propagation probability estimates by answer set programming and approximate model counting}, series = {IEEE Access}, volume = {10}, journal = {IEEE Access}, publisher = {Inst. of Electr. and Electronics Engineers}, address = {Piscataway}, issn = {2169-3536}, doi = {10.1109/ACCESS.2022.3174564}, pages = {51814 -- 51825}, year = {2022}, abstract = {We present a method employing Answer Set Programming in combination with Approximate Model Counting for fast and accurate calculation of error propagation probabilities in digital circuits. By an efficient problem encoding, we achieve an input data format similar to a Verilog netlist so that extensive preprocessing is avoided. By a tight interconnection of our application with the underlying solver, we avoid iterating over fault sites and reduce calls to the solver. Several circuits were analyzed with varying numbers of considered cycles and different degrees of approximation. Our experiments show, that the runtime can be reduced by approximation by a factor of 91, whereas the error compared to the exact result is below 1\%.}, language = {en} } @article{LiBreitenreiterAndjelkovicetal.2020, author = {Li, Yuanqing and Breitenreiter, Anselm and Andjelkovic, Marko and Chen, Junchao and Babic, Milan and Krstić, Miloš}, title = {Double cell upsets mitigation through triple modular redundancy}, series = {Microelectronics Journal}, volume = {96}, journal = {Microelectronics Journal}, publisher = {Elsevier}, address = {Oxford}, issn = {0026-2692}, doi = {10.1016/j.mejo.2019.104683}, pages = {8}, year = {2020}, abstract = {A triple modular redundancy (TMR) based design technique for double cell upsets (DCUs) mitigation is investigated in this paper. This technique adds three extra self-voter circuits into a traditional TMR structure to enable the enhanced error correction capability. Fault-injection simulations show that the soft error rate (SER) of the proposed technique is lower than 3\% of that of TMR. The implementation of this proposed technique is compatible with the automatic digital design flow, and its applicability and performance are evaluated on an FIFO circuit.}, language = {en} } @article{AndjelkovicSimevskiChenetal.2022, author = {Andjelkovic, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenkovic, Zoran and Krstić, Miloš and Ilic, Stefan and Ristic, Goran and Jaksic, Aleksandar and Vasovic, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.}, title = {A design concept for radiation hardened RADFET readout system for space applications}, series = {Microprocessors and microsystems}, volume = {90}, journal = {Microprocessors and microsystems}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0141-9331}, doi = {10.1016/j.micpro.2022.104486}, pages = {18}, year = {2022}, abstract = {Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.}, language = {en} } @article{RisticIlicAndjelkovicetal.2022, author = {Ristic, Goran S. and Ilic, Stefan D. and Andjelkovic, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksic, Aleksandar B.}, title = {Sensitivity and fading of irradiated RADFETs with different gate voltages}, series = {Nuclear Instruments and Methods in Physics Research Section A}, volume = {1029}, journal = {Nuclear Instruments and Methods in Physics Research Section A}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0168-9002}, doi = {10.1016/j.nima.2022.166473}, pages = {7}, year = {2022}, abstract = {The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.}, language = {en} }