@article{AndjelkovicSimevskiChenetal.2022,
  author    = {Andjelkovic, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenkovic, Zoran and Krstić, Miloš and Ilic, Stefan and Ristic, Goran and Jaksic, Aleksandar and Vasovic, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.},
  title     = {A design concept for radiation hardened RADFET readout system for space applications},
  series = {Microprocessors and microsystems},
  volume    = {90},
  journal   = {Microprocessors and microsystems},
  publisher = {Elsevier},
  address   = {Amsterdam},
  issn      = {0141-9331},
  doi       = {10.1016/j.micpro.2022.104486},
  pages     = {18},
  year      = {2022},
  abstract  = {Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.},
  language  = {en}
}
@article{RisticIlicAndjelkovicetal.2022,
  author    = {Ristic, Goran S. and Ilic, Stefan D. and Andjelkovic, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksic, Aleksandar B.},
  title     = {Sensitivity and fading of irradiated RADFETs with different gate voltages},
  series = {Nuclear Instruments and Methods in Physics Research Section A},
  volume    = {1029},
  journal   = {Nuclear Instruments and Methods in Physics Research Section A},
  publisher = {Elsevier},
  address   = {Amsterdam},
  issn      = {0168-9002},
  doi       = {10.1016/j.nima.2022.166473},
  pages     = {7},
  year      = {2022},
  abstract  = {The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.},
  language  = {en}
}