@article{RivnaySteyrleuthnerJimisonetal.2011,
  author    = {Rivnay, Jonathan and Steyrleuthner, Robert and Jimison, Leslie H. and Casadei, Alberto and Chen, Zhihua and Toney, Michael F. and Facchetti, Antonio and Neher, Dieter and Salleo, Alberto},
  title     = {Drastic control of texture in a high performance n-Type polymeric semiconductor and implications for charge transport},
  series = {Macromolecules : a publication of the American Chemical Society},
  volume    = {44},
  journal   = {Macromolecules : a publication of the American Chemical Society},
  number    = {13},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0024-9297},
  doi       = {10.1021/ma200864s},
  pages     = {5246 -- 5255},
  year      = {2011},
  abstract  = {Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer [N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5\% face-on to 94.6\% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40\% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material.},
  language  = {en}
}
@article{TurnerPingelSteyrleuthneretal.2011,
  author    = {Turner, Sarah T. and Pingel, Patrick and Steyrleuthner, Robert and Crossland, Edward J. W. and Ludwigs, Sabine and Neher, Dieter},
  title     = {Quantitative analysis of bulk heterojunction films using linear absorption spectroscopy and solar cell performance},
  series = {Advanced functional materials},
  volume    = {21},
  journal   = {Advanced functional materials},
  number    = {24},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1616-301X},
  doi       = {10.1002/adfm.201101583},
  pages     = {4640 -- 4652},
  year      = {2011},
  abstract  = {A fundamental understanding of the relationship between the bulk morphology and device performance is required for the further development of bulk heterojunction organic solar cells. Here, non-optimized (chloroform cast) and nearly optimized (solvent-annealed o-dichlorobenzene cast) P3HT:PCBM blend films treated over a range of annealing temperatures are studied via optical and photovoltaic device measurements. Parameters related to the P3HT aggregate morphology in the blend are obtained through a recently established analytical model developed by F. C. Spano for the absorption of weakly interacting H-aggregates. Thermally induced changes are related to the glass transition range of the blend. In the chloroform prepared devices, the improvement in device efficiency upon annealing within the glass transition range can be attributed to the growth of P3HT aggregates, an overall increase in the percentage of chain crystallinity, and a concurrent increase in the hole mobilities. Films treated above the glass transition range show an increase in efficiency and fill factor not only associated with the change in chain crystallinity, but also with a decrease in the energetic disorder. On the other hand, the properties of the P3HT phase in the solvent-annealed o-dichlorobenzene cast blends are almost indistinguishable from those of the corresponding pristine P3HT layer and are only weakly affected by thermal annealing. Apparently, slow drying of the blend allows the P3HT chains to crystallize into large domains with low degrees of intra- and interchain disorder. This morphology appears to be most favorable for the efficient generation and extraction of charges.},
  language  = {en}
}
@article{BlakesleySchubertSteyrleuthneretal.2011,
  author    = {Blakesley, James C. and Schubert, Marcel and Steyrleuthner, Robert and Chen, Zhihua and Facchetti, Antonio and Neher, Dieter},
  title     = {Time-of-flight measurements and vertical transport in a high electron-mobility polymer},
  series = {Applied physics letters},
  volume    = {99},
  journal   = {Applied physics letters},
  number    = {18},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.3657827},
  pages     = {3},
  year      = {2011},
  abstract  = {We investigate charge transport in a high-electron mobility polymer, poly(N, N-bis 2-octyldodecyl-naphthalene-1,4,5,8-bis dicarboximide-2,6-diyl-alt-5,5-2,2-bithiophene) [P(NDI2OD-T2), Polyera ActivInk (TM) N2200]. Time-of-flight measurements reveal electron mobilities approaching those measured in field-effect transistors, the highest ever recorded in a conjugated polymer using this technique. The modest temperature dependence and weak dispersion of the transients indicate low energetic disorder in this material. Steady-state electron-only current measurements reveal a barrier to injection of about 300 meV. We propose that this barrier is located within the P(NDI2OD-T2) film and arises from molecular orientation effects.},
  language  = {en}
}