@article{LuBlakesleyHimmelbergeretal.2013,
  author    = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter},
  title     = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors},
  series = {Nature Communications},
  volume    = {4},
  journal   = {Nature Communications},
  number    = {1-2},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/ncomms2587},
  pages     = {8},
  year      = {2013},
  abstract  = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.},
  language  = {en}
}