@article{PingelArvindKoellnetal.2016, author = {Pingel, Patrick and Arvind, Malavika and K{\"o}lln, Lisa and Steyrleuthner, Robert and Kraffert, Felix and Behrends, Jan and Janietz, Silvia and Neher, Dieter}, title = {p-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane}, series = {Advanced electronic materials}, volume = {2}, journal = {Advanced electronic materials}, publisher = {Wiley-Blackwell}, address = {Hoboken}, issn = {2199-160X}, doi = {10.1002/aelm.201600204}, pages = {7}, year = {2016}, abstract = {State-of-the-art p-type doping of organic semiconductors is usually achieved by employing strong -electron acceptors, a prominent example being tetrafluorotetracyanoquinodimethane (F(4)TCNQ). Here, doping of the semiconducting model polymer poly(3-hexylthiophene), P3HT, using the strong Lewis acid tris(pentafluorophenyl)borane (BCF) as a dopant, is investigated by admittance, conductivity, and electron paramagnetic resonance measurements. The electrical characteristics of BCF- and F(4)TCNQ-doped P3HT layers are shown to be very similar in terms of the mobile hole density and the doping efficiency. Roughly 18\% of the employed dopants create mobile holes in either F-4 TCNQ- or BCF-doped P3HT, while the majority of doping-induced holes remain strongly Coulomb-bound to the dopant anions. Despite similar hole densities, conductivity and hole mobility are higher in BCF-doped P3HT layers than in F(4)TCNQ-doped samples. This and the good solubility in many organic solvents render BCF very useful for p-type doping of organic semiconductors.}, language = {en} }