@article{LuBlakesleyHimmelbergeretal.2013,
  author    = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter},
  title     = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors},
  series = {Nature Communications},
  volume    = {4},
  journal   = {Nature Communications},
  number    = {1-2},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/ncomms2587},
  pages     = {8},
  year      = {2013},
  abstract  = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.},
  language  = {en}
}
@article{MuellerNanovaGlaseretal.2016,
  author    = {Mueller, Lars and Nanova, Diana and Glaser, Tobias and Beck, Sebastian and Pucci, Annemarie and Kast, Anne K. and Schroeder, Rasmus R. and Mankel, Eric and Pingel, Patrick and Neher, Dieter and Kowalsky, Wolfgang and Lovrincic, Robert},
  title     = {Charge-Transfer-Solvent Interaction Predefines Doping Efficiency in p-Doped P3HT Films},
  series = {Chemistry of materials : a publication of the American Chemical Society},
  volume    = {28},
  journal   = {Chemistry of materials : a publication of the American Chemical Society},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0897-4756},
  doi       = {10.1021/acs.chemmater.6b01629},
  pages     = {4432 -- 4439},
  year      = {2016},
  abstract  = {Efficient electrical doping of organic semiconductors is a necessary prerequisite for the fabrication of high performance organic electronic devices. In this work, we study p-type doping of poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) spin-cast from two different solvents. Using electron diffraction, we find strong dopant-induced pi-pi-stacking for films from the solvent chloroform, but not from chlorobenzene. This image is confirmed and expanded by the analysis of vibrational features of P3HT and polaron absorptions using optical spectroscopy. Here, a red-shifted polaron absorption is found in doped films from chloroform, caused by a higher conjugation length of the polymer backbone. These differences result in a higher conductivity of films from chloroform. We use optical spectroscopy on the corresponding blend solutions to shed light on the origin of this effect and propose a model to explain why solutions of doped P3HT reveal more aggregation of charged molecules in chlorobenzene, whereas more order is finally observed in dried films from chloroform. Our study emphasizes the importance of solvent parameters exceeding the bare solubility of pure dopant and host material for the preparation of highly conductive doped films.},
  language  = {en}
}