@article{PingelArvindKoellnetal.2016,
  author    = {Pingel, Patrick and Arvind, Malavika and K{\"o}lln, Lisa and Steyrleuthner, Robert and Kraffert, Felix and Behrends, Jan and Janietz, Silvia and Neher, Dieter},
  title     = {p-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane},
  series = {Advanced electronic materials},
  volume    = {2},
  journal   = {Advanced electronic materials},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.201600204},
  pages     = {7},
  year      = {2016},
  abstract  = {State-of-the-art p-type doping of organic semiconductors is usually achieved by employing strong -electron acceptors, a prominent example being tetrafluorotetracyanoquinodimethane (F(4)TCNQ). Here, doping of the semiconducting model polymer poly(3-hexylthiophene), P3HT, using the strong Lewis acid tris(pentafluorophenyl)borane (BCF) as a dopant, is investigated by admittance, conductivity, and electron paramagnetic resonance measurements. The electrical characteristics of BCF- and F(4)TCNQ-doped P3HT layers are shown to be very similar in terms of the mobile hole density and the doping efficiency. Roughly 18\% of the employed dopants create mobile holes in either F-4 TCNQ- or BCF-doped P3HT, while the majority of doping-induced holes remain strongly Coulomb-bound to the dopant anions. Despite similar hole densities, conductivity and hole mobility are higher in BCF-doped P3HT layers than in F(4)TCNQ-doped samples. This and the good solubility in many organic solvents render BCF very useful for p-type doping of organic semiconductors.},
  language  = {en}
}
@article{MuellerNanovaGlaseretal.2016,
  author    = {Mueller, Lars and Nanova, Diana and Glaser, Tobias and Beck, Sebastian and Pucci, Annemarie and Kast, Anne K. and Schroeder, Rasmus R. and Mankel, Eric and Pingel, Patrick and Neher, Dieter and Kowalsky, Wolfgang and Lovrincic, Robert},
  title     = {Charge-Transfer-Solvent Interaction Predefines Doping Efficiency in p-Doped P3HT Films},
  series = {Chemistry of materials : a publication of the American Chemical Society},
  volume    = {28},
  journal   = {Chemistry of materials : a publication of the American Chemical Society},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0897-4756},
  doi       = {10.1021/acs.chemmater.6b01629},
  pages     = {4432 -- 4439},
  year      = {2016},
  abstract  = {Efficient electrical doping of organic semiconductors is a necessary prerequisite for the fabrication of high performance organic electronic devices. In this work, we study p-type doping of poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) spin-cast from two different solvents. Using electron diffraction, we find strong dopant-induced pi-pi-stacking for films from the solvent chloroform, but not from chlorobenzene. This image is confirmed and expanded by the analysis of vibrational features of P3HT and polaron absorptions using optical spectroscopy. Here, a red-shifted polaron absorption is found in doped films from chloroform, caused by a higher conjugation length of the polymer backbone. These differences result in a higher conductivity of films from chloroform. We use optical spectroscopy on the corresponding blend solutions to shed light on the origin of this effect and propose a model to explain why solutions of doped P3HT reveal more aggregation of charged molecules in chlorobenzene, whereas more order is finally observed in dried films from chloroform. Our study emphasizes the importance of solvent parameters exceeding the bare solubility of pure dopant and host material for the preparation of highly conductive doped films.},
  language  = {en}
}