@phdthesis{Pampuch2000,
  author    = {Pampuch, Carsten},
  title     = {Elektronische Struktur niedrigdimensionaler Systeme auf Oberfl{\"a}chen mit zweiz{\"a}hliger Symmetrie},
  pages     = {98 S.},
  year      = {2000},
  language  = {de}
}
@article{RaderPampuchShikinetal.2004,
  author    = {Rader, Oliver and Pampuch, Carsten and Shikin, A. M. and Gudat, Wolfgang and Okabayashi, J. and Mizokawa, T. and Fujimori, A. and Hayashi, T. and Tanaka, M. and Tanaka, A. and Kimura, A.},
  title     = {Resonant photoemission of Ga1-xMnxAs at the Mn L edge},
  year      = {2004},
  abstract  = {Ga1-xMnxAs, x=0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1x1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L-3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L-3 on-resonance photoemission spectrum for model parameters Delta, U-dd, and (pdsigma) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L-3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory},
  language  = {en}
}