@article{NeumannNoeskeBachetal.2011,
  author    = {Neumann, Mike and Noeske, Robert and Bach, Grete and Glaubauf, Thomas and Bartoszek, Michael and Strauch, Peter},
  title     = {A procedure for rapid determination of the silicon content in plant materials},
  series = {Zeitschrift f{\"u}r Naturforschung : B, Chemical sciences},
  volume    = {66},
  journal   = {Zeitschrift f{\"u}r Naturforschung : B, Chemical sciences},
  number    = {3},
  publisher = {De Gruyter},
  address   = {T{\"u}bingen},
  issn      = {0932-0776},
  pages     = {289 -- 294},
  year      = {2011},
  abstract  = {An efficient, reliable and low-cost procedure to determine the silicon content in plant material is presented which allows to monitor the agricultural aspects like growth and yield. The presented procedure consists of a hydrochloric acid pre-treatment and a subsequent thermal oxidation. The method is compared to other processes like dissolution in hydrofluoric acid combined with ICP OES, energy-dispersive X-ray fluorescence spectroscopy (EDXRF) or aqua regia treatment.},
  language  = {en}
}
@article{NeumannNoeskeTaubertetal.2012,
  author    = {Neumann, Mike and Noeske, Robert and Taubert, Andreas and Tiersch, Brigitte and Strauch, Peter},
  title     = {Highly structured, biomorphous beta-SiC with high specific surface area from Equisetaceae},
  series = {Journal of materials chemistry},
  volume    = {22},
  journal   = {Journal of materials chemistry},
  number    = {18},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {0959-9428},
  doi       = {10.1039/c2jm30253e},
  pages     = {9046 -- 9051},
  year      = {2012},
  abstract  = {Mesoporous, highly structured silicon carbide (beta-SiC) was synthesised from renewable plant materials (two Equisetaceae species) in a one-step carbothermal process at remarkably low temperatures down to 1200 degrees C. The SiC precursor is a silicon-carbon mixture with finely dispersed carbon prepared by pyrolysis of the organic plant matrix. Yields are 3 to 100\% (omega(Si/Si) related to the silicon deposited in the plant material), depending on reaction temperature and time. IR spectroscopy, X-ray diffraction, and nitrogen sorption prove the formation of high-purity beta-SiC with minor inorganic impurities after purification and a high specific surface area of up to 660 m(2) g(-1). Scanning electron microscopy shows that the plant morphology is maintained in the final SiC. Sedimentation analysis finds a mean particle size (diameters d(50)) of 20 mu m.},
  language  = {en}
}