@article{KegelmannTockhornWolffetal.2019,
  author    = {Kegelmann, Lukas and Tockhorn, Philipp and Wolff, Christian Michael and M{\´a}rquez, Jos{\´e} A. and Caicedo D{\´a}vila, Sebasti{\´a}n and Korte, Lars and Unold, Thomas and Loevenich, Wilfried and Neher, Dieter and Rech, Bernd and Albrecht, Steve},
  title     = {Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells},
  series = {ACS applied materials \& interfaces},
  volume    = {11},
  journal   = {ACS applied materials \& interfaces},
  number    = {9},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1944-8244},
  doi       = {10.1021/acsami.9b01332},
  pages     = {9172 -- 9181},
  year      = {2019},
  abstract  = {Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22\%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7\% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.},
  language  = {en}
}
@article{TockhornSutterCruzBournazouetal.2022,
  author    = {Tockhorn, Philipp and Sutter, Johannes and Cruz Bournazou, Alexandros and Wagner, Philipp and J{\"a}ger, Klaus and Yoo, Danbi and Lang, Felix and Grischek, Max and Li, Bor and Li, Jinzhao and Shargaieva, Oleksandra and Unger, Eva and Al-Ashouri, Amran and K{\"o}hnen, Eike and Stolterfoht, Martin and Neher, Dieter and Schlatmann, Rutger and Rech, Bernd and Stannowski, Bernd and Albrecht, Steve and Becker, Christiane},
  title     = {Nano-optical designs for high-efficiency monolithic perovskite-silicon tandem solar cells},
  series = {Nature nanotechnology},
  volume    = {17},
  journal   = {Nature nanotechnology},
  number    = {11},
  publisher = {Nature Publishing Group},
  address   = {London [u.a.]},
  issn      = {1748-3387},
  doi       = {10.1038/s41565-022-01228-8},
  pages     = {1214 -- 1221},
  year      = {2022},
  abstract  = {Designing gentle sinusoidal nanotextures enables the realization of high-efficiency perovskite-silicon solar cells <br /> Perovskite-silicon tandem solar cells offer the possibility of overcoming the power conversion efficiency limit of conventional silicon solar cells. Various textured tandem devices have been presented aiming at improved optical performance, but optimizing film growth on surface-textured wafers remains challenging. Here we present perovskite-silicon tandem solar cells with periodic nanotextures that offer various advantages without compromising the material quality of solution-processed perovskite layers. We show a reduction in reflection losses in comparison to planar tandems, with the new devices being less sensitive to deviations from optimum layer thicknesses. The nanotextures also enable a greatly increased fabrication yield from 50\% to 95\%. Moreover, the open-circuit voltage is improved by 15 mV due to the enhanced optoelectronic properties of the perovskite top cell. Our optically advanced rear reflector with a dielectric buffer layer results in reduced parasitic absorption at near-infrared wavelengths. As a result, we demonstrate a certified power conversion efficiency of 29.80\%.},
  language  = {en}
}