@article{GhaniOpitzPingeletal.2015,
  author    = {Ghani, Fatemeh and Opitz, Andreas and Pingel, Patrick and Heimel, Georg and Salzmann, Ingo and Frisch, Johannes and Neher, Dieter and Tsami, Argiri and Scherf, Ullrich and Koch, Norbert},
  title     = {Charge Transfer in and Conductivity of Molecularly Doped Thiophene-Based Copolymers},
  series = {Journal of polymer science : B, Polymer physics},
  volume    = {53},
  journal   = {Journal of polymer science : B, Polymer physics},
  number    = {1},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {0887-6266},
  doi       = {10.1002/polb.23631},
  pages     = {58 -- 63},
  year      = {2015},
  abstract  = {The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.},
  language  = {en}
}
@article{SalzmannHeimelDuhmetal.2012,
  author    = {Salzmann, Ingo and Heimel, Georg and Duhm, Steffen and Oehzelt, Martin and Pingel, Patrick and George, Benjamin M. and Schnegg, Alexander and Lips, Klaus and Blum, Ralf-Peter and Vollmer, Antje and Koch, Norbert},
  title     = {Intermolecular hybridization governs molecular electrical doping},
  series = {Physical review letters},
  volume    = {108},
  journal   = {Physical review letters},
  number    = {3},
  publisher = {American Physical Society},
  address   = {College Park},
  issn      = {0031-9007},
  doi       = {10.1103/PhysRevLett.108.035502},
  pages     = {5},
  year      = {2012},
  abstract  = {Current models for molecular electrical doping of organic semiconductors are found to be at odds with other well-established concepts in that field, like polaron formation. Addressing these inconsistencies for prototypical systems, we present experimental and theoretical evidence for intermolecular hybridization of organic semiconductor and dopant frontier molecular orbitals. Common doping-related observations are attributed to this phenomenon, and controlling the degree of hybridization emerges as a strategy for overcoming the present limitations in the yield of doping-induced charge carriers.},
  language  = {en}
}
@article{LangeReiterPaetzeletal.2014,
  author    = {Lange, Ilja and Reiter, Sina and Paetzel, Michael and Zykov, Anton and Nefedov, Alexei and Hildebrandt, Jana and Hecht, Stefan and Kowarik, Stefan and Woell, Christof and Heimel, Georg and Neher, Dieter},
  title     = {Tuning the work function of polar zinc oxide surfaces using modified phosphonic acid self-assembled monolayers},
  series = {Advanced functional materials},
  volume    = {24},
  journal   = {Advanced functional materials},
  number    = {44},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1616-301X},
  doi       = {10.1002/adfm.201401493},
  pages     = {7014 -- 7024},
  year      = {2014},
  abstract  = {Zinc oxide (ZnO) is regarded as a promising alternative material for transparent conductive electrodes in optoelectronic devices. However, ZnO suffers from poor chemical stability. ZnO also has a moderate work function (WF), which results in substantial charge injection barriers into common (organic) semiconductors that constitute the active layer in a device. Controlling and tuning the ZnO WF is therefore necessary but challenging. Here, a variety of phosphonic acid based self-assembled monolayers (SAMs) deposited on ZnO surfaces are investigated. It is demonstrated that they allow the tuning the WF over a wide range of more than 1.5 eV, thus enabling the use of ZnO as both the hole-injecting and electron-injecting contact. The modified ZnO surfaces are characterized using a number of complementary techniques, demonstrating that the preparation protocol yields dense, well-defined molecular monolayers.},
  language  = {en}
}