@article{UlyanenkovKlemradtPietsch1998, author = {Ulyanenkov, A. and Klemradt, U. and Pietsch, Ullrich}, title = {Investigation of strain relaxation in GaInAs/GaAs superlattices by x-ray diffuse scattering}, year = {1998}, language = {en} } @article{UlyanenkovDarowskiGrenzeretal.1999, author = {Ulyanenkov, A. and Darowski, Nora and Grenzer, J{\"o}rg and Pietsch, Ullrich and Wang, K. H. and Forchel, Alfred}, title = {Evaluation of strain distribution in freestanding and bruied lateral nanostructures}, year = {1999}, language = {en} } @article{UlyanenkovBaumbachDarowskietal.1999, author = {Ulyanenkov, A. and Baumbach, Tilo and Darowski, Nora and Pietsch, Ullrich and Wang, K. H. and Forchel, Alfred and Wiebach, T.}, title = {Investigation of the in-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]}, year = {1999}, language = {en} } @article{TsirelsonAvilovLepeshovetal.2001, author = {Tsirelson, Vladimir G. and Avilov, Anatoly S. and Lepeshov, G. G. and Kuligin, A. K. and Stahn, Jochen and Pietsch, Ullrich and Spence, J. C. H.}, title = {Quantitative Analysis of the Inner-Crystal Electrostatic Potential of several Rock-Salt-Structure Crystals Using Accurate Electron-Diffraction Data}, issn = {1089-5647}, year = {2001}, language = {en} } @article{TsirelsonAbramovZavodniketal.1998, author = {Tsirelson, Vladimir G. and Abramov, Yury Fedorovich and Zavodnik, Valerie E. and Stash, Adam I. and Belokoneva, Elena L. and Stahn, Jochen and Pietsch, Ullrich and Feil, Dirk}, title = {Critical pionts in a crystal an procrystal}, year = {1998}, language = {en} } @article{ThuenemannKubowiczPietsch2000, author = {Th{\"u}nemann, Andreas F. and Kubowicz, Stephan and Pietsch, Ullrich}, title = {Ultra-thin solid polyelectrolyte-surfactant complex films : structure and wetting}, year = {2000}, language = {en} } @article{TalalaevTommElsaesseretal.2005, author = {Talalaev, V and Tomm, JW and Elsaesser, T and Zeimer, Ute and Fricke, J and Knauer, A and Kissel, H and Weyers, Markus and Tarasov, GG and Grenzer, J{\"o}rg and Pietsch, Ullrich}, title = {Carrier dynamics in laterally strain-modulated InGaAs quantum wells}, year = {2005}, abstract = {We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a patterned stressor layer. The structure thus contains QW- and quantum-wire-like areas. At low excitation densities, photoluminescence (PL) transients from both areas are well described by a rate equation model for a three-level system with a saturable interlevel carrier transfer representing the lateral drift of carriers from the QW regions into the wires. Small-signal carrier lifetimes for QW, wires, and transfer time from QW to wire are 180, 190, and 28 ps, respectively. For high excitation densities the time constants of the observed transients increase, in agreement with the model. In addition, QW and wire PL lines merge indicating a smoothening of the potential difference, i.e., the effective carrier confinement caused by the stressor structure becomes weaker with increasing excitation. (c) 2005 American Institute of Physics}, language = {en} } @article{StoemmerMartinGeueetal.1998, author = {St{\"o}mmer, Ralph and Martin, C. R. and Geue, Thomas and G{\"o}bel, H. and Hub, W. and Pietsch, Ullrich}, title = {Comparative studies of fractal parameters of Si(100) surfaces measured by X-ray scattering and atomic force microscopy}, year = {1998}, language = {en} } @article{StoemmerGoebelHubetal.1998, author = {St{\"o}mmer, Ralph and G{\"o}bel, H. and Hub, W. and Pietsch, Ullrich}, title = {X-ray scattering from silicon surfaces}, year = {1998}, language = {en} } @article{StruthDecherSchmittetal.1999, author = {Struth, Bernd and Decher, Gero and Schmitt, J. and Hofmeister, Wolfgang and Neißendorfer, Frank and Pietsch, Ullrich and Brezesinski, Gerald and M{\"o}hwald, Helmuth}, title = {Chemical modification of Topaz surfaces}, issn = {0928-4931}, year = {1999}, language = {en} }