@article{SteigertKojdaIbacetaJanaetal.2022,
  author    = {Steigert, Alexander and Kojda, Sandrino Danny and Ibaceta-Ja{\~n}a, Josefa Fernanda and Abou-Ras, Daniel and Gunder, Ren{\´e} and Alktash, Nivin and Habicht, Klaus and Wagner, Markus Raphael and Klenk, Reiner and Raoux, Simone and Szyszka, Bernd and Lauermann, Iver and Muydinov, Ruslan},
  title     = {Water-assisted crystallization of amorphous indium zinc oxide films},
  series = {Materials today. Communications},
  volume    = {31},
  journal   = {Materials today. Communications},
  publisher = {Elsevier},
  address   = {Amsterdam},
  issn      = {2352-4928},
  doi       = {10.1016/j.mtcomm.2022.103213},
  pages     = {10},
  year      = {2022},
  abstract  = {Transparent conductive materials based on indium oxide remain yet irreplaceable in various optoelectronic applications. Amorphous oxides appear especially attractive for technology as they are isotropic, demonstrate relatively high electron mobility and can be processed at low temperatures. Among them is indium zinc oxide (IZO) with a large zinc content that is crucial for keeping the amorphous state but redundant for the doping. In this work we investigated water-free and water containing IZO films obtained by radio frequency sputtering. The correlation between temperature driven changes of the chemical state, the optical and electrical properties as well as the progression of crystallization was in focus. Such characterization methods as: scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, temperature dependent Hall-effect measurements and others were applied. Temperature dependent electrical properties of amorphous IZO and IZO:H2O films were found to evolve similarly. Based on our experience in In2O3:H2O (In2O3:H or IOH) we proposed an explanation for the changes observed. Water admixture was found to decrease crystallization temperature of IZO significantly from similar to 550 degrees C to similar to 280 degrees C. Herewith, the presence and concentration of water and/or hydroxyls was found to determine Zn distribution in the film. In particular, Zn enrichment was detected at the film's surface respective to the high water and/or hydroxyl amount. Raman spectra revealed a two-dimensional crystallization of w-ZnO which precedes regardless water presence an extensive In2O3 crystallization. An abrupt loss of electron mobility as a result of crystallization was attributed to the formation of ZnO interlayer on grain boundaries.},
  language  = {en}
}
@article{BalderasValadezAntunezOliveMendezetal.2017,
  author    = {Balderas-Valadez, Ruth Fabiola and Antunez, E. E. and Olive-Mendez, Sion Federico and Pacholski, Claudia and Campos-Alvarez, Jose and Bokhimi, Xim and Agarwal, V.},
  title     = {Porous silicon pillar and bilayer structure as a nucleation center for the formation of aligned vanadium pentoxide nanorods},
  series = {Ceramics International},
  volume    = {43},
  journal   = {Ceramics International},
  publisher = {Elsevier},
  address   = {Oxford},
  issn      = {0272-8842},
  doi       = {10.1016/j.ceramint.2017.03.114},
  pages     = {8023 -- 8030},
  year      = {2017},
  abstract  = {Porous silicon single layer (PSM), bilayer (PSB) and pillar (PSP) structures have been evaluated as nucleation centers for vanadium pentoxide (V2O5) crystals. Deposition of vanadium precursor over different substrates (drop casting technique), followed by annealing treatment under Ar-H-2 (5\% H-2) atmosphere, induced crystallization of vanadium oxide. With respect to c-Si/SiO2 substrate, V2O5 nanorods with relatively large aspect ratio were formed over and within PSP structures. On the other hand, pores in PSM and PSB were found to be filled with relatively smaller crystals. Additionally, PSB provided a nucleation substrate capable to align the nanocrystals in a preferential orientation, while V2O5 crystals grown on PSP were found to be randomly aligned around the nanoporous pillar microstructure. Nanorods and nanocrystals were identified as V2O5 by temperature-controlled XRD measurements and evidence of their crystalline nature was observed via transmission electron microscopy. A careful analysis of electronic microscopy images allows the identification of the facets composing the ends of the crystals and its corresponding surface free energy has been evaluated employing the Wulff theorem. Such high surface area composite structures have potential applications as cathode material in Lithium-ion batteries.},
  language  = {en}
}
@article{EmmerlingOrgzallDietzeletal.2012,
  author    = {Emmerling, Franziska and Orgzall, Ingo and Dietzel, Birgit and Schulz, Burkhard and Larrucea, Julen},
  title     = {Ordering the amorphous - Structures in PBD LED materials},
  series = {Journal of molecular structure},
  volume    = {1030},
  journal   = {Journal of molecular structure},
  number    = {23},
  publisher = {Elsevier},
  address   = {Amsterdam},
  issn      = {0022-2860},
  doi       = {10.1016/j.molstruc.2012.04.040},
  pages     = {209 -- 215},
  year      = {2012},
  abstract  = {The class of 2,5 disubstituted-1,3,4-oxadiazoles containing a biphenyl unit on one side is intensively used as electron transport materials to enhance the performance of organic light emitting diodes (OLEDs). In contrast to the ongoing research on these materials insights in their structure-property relationships are still incomplete. To overcome the structural tentativeness and ambiguities the crystal structures of 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, that of the related compound 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole and of 2-(4-biphenylyl)-5-(2,6-dimethylphenyl)-1,3,4-oxadiazole are determined. A comparison with the results of GAUSSIAN03 calculations and similar compounds in the Cambridge Structural Database leads to a profound characterization.},
  language  = {en}
}