@article{DiPietroErdmannCarpenteretal.2017,
  author    = {Di Pietro, Riccardo and Erdmann, Tim and Carpenter, Joshua H. and Wang, Naixiang and Shivhare, Rishi Ramdas and Formanek, Petr and Heintze, Cornelia and Voit, Brigitte and Neher, Dieter and Ade, Harald W. and Kiriy, Anton},
  title     = {Synthesis of High-Crystallinity DPP Polymers with Balanced Electron and Hole Mobility},
  series = {Chemistry of materials : a publication of the American Chemical Society},
  volume    = {29},
  journal   = {Chemistry of materials : a publication of the American Chemical Society},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0897-4756},
  doi       = {10.1021/acs.chemmater.7b04423},
  pages     = {10220 -- 10232},
  year      = {2017},
  language  = {en}
}
@article{LuDiPietroKoellnetal.2016,
  author    = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter},
  title     = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends},
  series = {Advanced electronic materials},
  volume    = {2},
  journal   = {Advanced electronic materials},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.201600267},
  pages     = {2344 -- 2351},
  year      = {2016},
  abstract  = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.},
  language  = {en}
}
@article{DiPietroNasrallahCarpenteretal.2016,
  author    = {Di Pietro, Riccardo and Nasrallah, Iyad and Carpenter, Joshua and Gann, Eliot and K{\"o}lln, Lisa Sophie and Thomsen, Lars and Venkateshvaran, Deepak and Sadhanala, Aditya and Chabinyc, Michael and McNeill, Christopher R. and Facchetti, Antonio and Ade, Harald W. and Sirringhaus, Henning and Neher, Dieter},
  title     = {Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors},
  series = {Advanced functional materials},
  volume    = {26},
  journal   = {Advanced functional materials},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1616-301X},
  doi       = {10.1002/adfm.201602080},
  pages     = {8011 -- 8022},
  year      = {2016},
  language  = {en}
}
@article{SteyrleuthnerDiPietroCollinsetal.2014,
  author    = {Steyrleuthner, Robert and Di Pietro, Riccardo and Collins, Brian A. and Polzer, Frank and Himmelberger, Scott and Schubert, Marcel and Chen, Zhihua and Zhang, Shiming and Salleo, Alberto and Ade, Harald W. and Facchetti, Antonio and Neher, Dieter},
  title     = {The Role of Regioregularity, Crystallinity, and Chain Orientation on Electron Transport in a High-Mobility n-Type Copolymer},
  series = {Journal of the American Chemical Society},
  volume    = {136},
  journal   = {Journal of the American Chemical Society},
  number    = {11},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0002-7863},
  doi       = {10.1021/ja4118736},
  pages     = {4245 -- 4256},
  year      = {2014},
  language  = {en}
}
@article{DiPietroVenkateshvaranKlugetal.2014,
  author    = {Di Pietro, Riccardo and Venkateshvaran, Deepak and Klug, Andreas and List-Kratochvil, Emil J. W. and Facchetti, Antonio and Sirringhaus, Henning and Neher, Dieter},
  title     = {Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors},
  series = {Applied physics letters},
  volume    = {104},
  journal   = {Applied physics letters},
  number    = {19},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.4876057},
  pages     = {5},
  year      = {2014},
  abstract  = {A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials. (C) 2014 AIP Publishing LLC.},
  language  = {en}
}
@article{TremelFischerKayunkidetal.2014,
  author    = {Tremel, Kim and Fischer, Florian S. U. and Kayunkid, Navaphun and Di Pietro, Riccardo and Tkachov, Roman and Kiriy, Anton and Neher, Dieter and Ludwigs, Sabine and Brinkmann, Martin},
  title     = {Charge transport anisotropy in highly oriented thin films of the acceptor polymer P(NDI2OD-T2)},
  series = {dvanced energy materials},
  volume    = {4},
  journal   = {dvanced energy materials},
  number    = {10},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1614-6832},
  doi       = {10.1002/aenm.201301659},
  pages     = {13},
  year      = {2014},
  abstract  = {The nanomorphology of the high mobility polymer poly{[N,N'-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} P(NDI2OD-T2) in thin films is explored as a function of different annealing conditions and correlated to optical and electrical properties. While nanofibrils with face-on orientation in form I are obtained directly after spin-coating and annealing below the melt transition temperature, clear evidence of lamellar structures is found after melt-annealing followed by slow cooling to room temperature. Interestingly these structural changes are accompanied by distinct changes in the absorption patterns. Electron diffraction measurements further show clear transitions towards predominant edge-on oriented chains in form II upon melt-annealing. Large-scale alignment with dichroic ratios up to 10 and improved order is achieved by high temperature rubbing and subsequent post-rubbing annealing. These highly oriented morphologies allow anisotropic in-plane charge transport to be probed with top-gate transistors parallel and perpendicular to the polymer chain direction. Mobilities up to 0.1 cm(2) V-1 s(-1) are observed parallel to the polymer chain, which is up to 10 times higher than those perpendicular to the polymer chain.},
  language  = {en}
}
@article{LuBlakesleyHimmelbergeretal.2013,
  author    = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter},
  title     = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors},
  series = {Nature Communications},
  volume    = {4},
  journal   = {Nature Communications},
  number    = {1-2},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/ncomms2587},
  pages     = {8},
  year      = {2013},
  abstract  = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.},
  language  = {en}
}