@article{SchrapeAndjelkovicBreitenreiteretal.2021,
  author    = {Schrape, Oliver and Andjelkovic, Marko and Breitenreiter, Anselm and Zeidler, Steffen and Balashov, Alexey and Krstić, Miloš},
  title     = {Design and evaluation of radiation-hardened standard cell flip-flops},
  series = {IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society: 1, Regular papers},
  volume    = {68},
  journal   = {IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society: 1, Regular papers},
  number    = {11},
  publisher = {Inst. of Electr. and Electronics Engineers},
  address   = {New York, NY},
  issn      = {1549-8328},
  doi       = {10.1109/TCSI.2021.3109080},
  pages     = {4796 -- 4809},
  year      = {2021},
  abstract  = {Use of a standard non-rad-hard digital cell library in the rad-hard design can be a cost-effective solution for space applications. In this paper we demonstrate how a standard non-rad-hard flip-flop, as one of the most vulnerable digital cells, can be converted into a rad-hard flip-flop without modifying its internal structure. We present five variants of a Triple Modular Redundancy (TMR) flip-flop: baseline TMR flip-flop, latch-based TMR flip-flop, True-Single Phase Clock (TSPC) TMR flip-flop, scannable TMR flip-flop and self-correcting TMR flipflop. For all variants, the multi-bit upsets have been addressed by applying special placement constraints, while the Single Event Transient (SET) mitigation was achieved through the usage of customized SET filters and selection of optimal inverter sizes for the clock and reset trees. The proposed flip-flop variants feature differing performance, thus enabling to choose the optimal solution for every sensitive node in the circuit, according to the predefined design constraints. Several flip-flop designs have been validated on IHP's 130nm BiCMOS process, by irradiation of custom-designed shift registers. It has been shown that the proposed TMR flip-flops are robust to soft errors with a threshold Linear Energy Transfer (LET) from (32.4 MeV.cm(2)/mg) to (62.5 MeV.cm(2)/mg), depending on the variant.},
  language  = {en}
}
@article{LiBreitenreiterAndjelkovicetal.2020,
  author    = {Li, Yuanqing and Breitenreiter, Anselm and Andjelkovic, Marko and Chen, Junchao and Babic, Milan and Krstić, Miloš},
  title     = {Double cell upsets mitigation through triple modular redundancy},
  series = {Microelectronics Journal},
  volume    = {96},
  journal   = {Microelectronics Journal},
  publisher = {Elsevier},
  address   = {Oxford},
  issn      = {0026-2692},
  doi       = {10.1016/j.mejo.2019.104683},
  pages     = {8},
  year      = {2020},
  abstract  = {A triple modular redundancy (TMR) based design technique for double cell upsets (DCUs) mitigation is investigated in this paper. This technique adds three extra self-voter circuits into a traditional TMR structure to enable the enhanced error correction capability. Fault-injection simulations show that the soft error rate (SER) of the proposed technique is lower than 3\% of that of TMR. The implementation of this proposed technique is compatible with the automatic digital design flow, and its applicability and performance are evaluated on an FIFO circuit.},
  language  = {en}
}
@article{ChenLangeAndjelkovicetal.2022,
  author    = {Chen, Junchao and Lange, Thomas and Andjelkovic, Marko and Simevski, Aleksandar and Lu, Li and Krstic, Milos},
  title     = {Solar particle event and single event upset prediction from SRAM-based monitor and supervised machine learning},
  series = {IEEE transactions on emerging topics in computing / IEEE Computer Society, Institute of Electrical and Electronics Engineers},
  volume    = {10},
  journal   = {IEEE transactions on emerging topics in computing / IEEE Computer Society, Institute of Electrical and Electronics Engineers},
  number    = {2},
  publisher = {Institute of Electrical and Electronics Engineers},
  address   = {[New York, NY]},
  issn      = {2168-6750},
  doi       = {10.1109/TETC.2022.3147376},
  pages     = {564 -- 580},
  year      = {2022},
  abstract  = {The intensity of cosmic radiation may differ over five orders of magnitude within a few hours or days during the Solar Particle Events (SPEs), thus increasing for several orders of magnitude the probability of Single Event Upsets (SEUs) in space-borne electronic systems. Therefore, it is vital to enable the early detection of the SEU rate changes in order to ensure timely activation of dynamic radiation hardening measures. In this paper, an embedded approach for the prediction of SPEs and SRAM SEU rate is presented. The proposed solution combines the real-time SRAM-based SEU monitor, the offline-trained machine learning model and online learning algorithm for the prediction. With respect to the state-of-the-art, our solution brings the following benefits: (1) Use of existing on-chip data storage SRAM as a particle detector, thus minimizing the hardware and power overhead, (2) Prediction of SRAM SEU rate one hour in advance, with the fine-grained hourly tracking of SEU variations during SPEs as well as under normal conditions, (3) Online optimization of the prediction model for enhancing the prediction accuracy during run-time, (4) Negligible cost of hardware accelerator design for the implementation of selected machine learning model and online learning algorithm. The proposed design is intended for a highly dependable and self-adaptive multiprocessing system employed in space applications, allowing to trigger the radiation mitigation mechanisms before the onset of high radiation levels.},
  language  = {en}
}
@misc{AndjelkovicBabicLietal.2019,
  author    = {Andjelkovic, Marko and Babic, Milan and Li, Yuanqing and Schrape, Oliver and Krstić, Miloš and Kraemer, Rolf},
  title     = {Use of decoupling cells for mitigation of SET effects in CMOS combinational gates},
  series = {2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)},
  journal   = {2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)},
  publisher = {IEEE},
  address   = {New York},
  isbn      = {978-1-5386-9562-3},
  doi       = {10.1109/ICECS.2018.8617996},
  pages     = {361 -- 364},
  year      = {2019},
  abstract  = {This paper investigates the applicability of CMOS decoupling cells for mitigating the Single Event Transient (SET) effects in standard combinational gates. The concept is based on the insertion of two decoupling cells between the gate's output and the power/ground terminals. To verify the proposed hardening approach, extensive SPICE simulations have been performed with standard combinational cells designed in IHP's 130 nm bulk CMOS technology. Obtained simulation results have shown that the insertion of decoupling cells results in the increase of the gate's critical charge, thus reducing the gate's soft error rate (SER). Moreover, the decoupling cells facilitate the suppression of SET pulses propagating through the gate. It has been shown that the decoupling cells may be a competitive alternative to gate upsizing and gate duplication for hardening the gates with lower critical charge and multiple (3 or 4) inputs, as well as for filtering the short SET pulses induced by low-LET particles.},
  language  = {en}
}
@phdthesis{Andjelkovic2021,
  author    = {Andjelkovic, Marko},
  title     = {A methodology for characterization, modeling and mitigation of single event transient effects in CMOS standard combinational cells},
  doi       = {10.25932/publishup-53484},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-534843},
  school      = {Universit{\"a}t Potsdam},
  pages     = {xxiv, 216},
  year      = {2021},
  abstract  = {With the downscaling of CMOS technologies, the radiation-induced Single Event Transient (SET) effects in combinational logic have become a critical reliability issue for modern integrated circuits (ICs) intended for operation under harsh radiation conditions. The SET pulses generated in combinational logic may propagate through the circuit and eventually result in soft errors. It has thus become an imperative to address the SET effects in the early phases of the radiation-hard IC design. In general, the soft error mitigation solutions should accommodate both static and dynamic measures to ensure the optimal utilization of available resources. An efficient soft-error-aware design should address synergistically three main aspects: (i) characterization and modeling of soft errors, (ii) multi-level soft error mitigation, and (iii) online soft error monitoring. Although significant results have been achieved, the effectiveness of SET characterization methods, accuracy of predictive SET models, and efficiency of SET mitigation measures are still critical issues. Therefore, this work addresses the following topics: (i) Characterization and modeling of SET effects in standard combinational cells, (ii) Static mitigation of SET effects in standard combinational cells, and (iii) Online particle detection, as a support for dynamic soft error mitigation. Since the standard digital libraries are widely used in the design of radiation-hard ICs, the characterization of SET effects in standard cells and the availability of accurate SET models for the Soft Error Rate (SER) evaluation are the main prerequisites for efficient radiation-hard design. This work introduces an approach for the SPICE-based standard cell characterization with the reduced number of simulations, improved SET models and optimized SET sensitivity database. It has been shown that the inherent similarities in the SET response of logic cells for different input levels can be utilized to reduce the number of required simulations. Based on characterization results, the fitting models for the SET sensitivity metrics (critical charge, generated SET pulse width and propagated SET pulse width) have been developed. The proposed models are based on the principle of superposition, and they express explicitly the dependence of the SET sensitivity of individual combinational cells on design, operating and irradiation parameters. In contrast to the state-of-the-art characterization methodologies which employ extensive look-up tables (LUTs) for storing the simulation results, this work proposes the use of LUTs for storing the fitting coefficients of the SET sensitivity models derived from the characterization results. In that way the amount of characterization data in the SET sensitivity database is reduced significantly. The initial step in enhancing the robustness of combinational logic is the application of gate-level mitigation techniques. As a result, significant improvement of the overall SER can be achieved with minimum area, delay and power overheads. For the SET mitigation in standard cells, it is essential to employ the techniques that do not require modifying the cell structure. This work introduces the use of decoupling cells for improving the robustness of standard combinational cells. By insertion of two decoupling cells at the output of a target cell, the critical charge of the cell's output node is increased and the attenuation of short SETs is enhanced. In comparison to the most common gate-level techniques (gate upsizing and gate duplication), the proposed approach provides better SET filtering. However, as there is no single gate-level mitigation technique with optimal performance, a combination of multiple techniques is required. This work introduces a comprehensive characterization of gate-level mitigation techniques aimed to quantify their impact on the SET robustness improvement, as well as introduced area, delay and power overhead per gate. By characterizing the gate-level mitigation techniques together with the standard cells, the required effort in subsequent SER analysis of a target design can be reduced. The characterization database of the hardened standard cells can be utilized as a guideline for selection of the most appropriate mitigation solution for a given design. As a support for dynamic soft error mitigation techniques, it is important to enable the online detection of energetic particles causing the soft errors. This allows activating the power-greedy fault-tolerant configurations based on N-modular redundancy only at the high radiation levels. To enable such a functionality, it is necessary to monitor both the particle flux and the variation of particle LET, as these two parameters contribute significantly to the system SER. In this work, a particle detection approach based on custom-sized pulse stretching inverters is proposed. Employing the pulse stretching inverters connected in parallel enables to measure the particle flux in terms of the number of detected SETs, while the particle LET variations can be estimated from the distribution of SET pulse widths. This approach requires a purely digital processing logic, in contrast to the standard detectors which require complex mixed-signal processing. Besides the possibility of LET monitoring, additional advantages of the proposed particle detector are low detection latency and power consumption, and immunity to error accumulation. The results achieved in this thesis can serve as a basis for establishment of an overall soft-error-aware database for a given digital library, and a comprehensive multi-level radiation-hard design flow that can be implemented with the standard IC design tools. The following step will be to evaluate the achieved results with the irradiation experiments.},
  language  = {en}
}