@article{Pietsch2002, author = {Pietsch, Ullrich}, title = {Reversible negative thermal expansion of polymer films}, year = {2002}, language = {en} } @article{Pietsch2000, author = {Pietsch, Ullrich}, title = {Investigations of semiconductor surfaces and interfaces by X-ray grazing incidence diffraction}, issn = {0011-3891}, year = {2000}, language = {en} } @article{PietschBarberkaGeueetal.1997, author = {Pietsch, Ullrich and Barberka, Thomas Andreas and Geue, Thomas and St{\"o}mmer, Ralph}, title = {X-ray scattering from thin organic films and multilayers}, year = {1997}, language = {en} } @article{PietschBhattacharyaMukherjeeetal.2003, author = {Pietsch, Ullrich and Bhattacharya, M. K. and Mukherjee, M. and Sanyal, M. K. and Geue, Thomas and Grenzer, J{\"o}rg}, title = {Energy dispersive x-ray reflectivity technique to study thermal properties of polymer films}, year = {2003}, language = {en} } @article{PietschBhattacharyaSanyaletal.2005, author = {Pietsch, Ullrich and Bhattacharya, M. K. and Sanyal, M. K. and Geue, Thomas}, title = {Glass transition in Ultrathin Polymer Films : a Thermal Expansion Study}, year = {2005}, abstract = {The glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of the glass transition temperature (T-g) as the thickness of an ultrathin polymer film reduces below the radius of gyration but the change in the average T-g was found to be very small. The existence of reversible negative and positive thermal expansion below and above T-g increased the sensitivity of our thickness measurements performed using energy-dispersive x-ray reflectivity. A simple model of the T-g variation as a function of depth expected from sliding motion could explain the results}, language = {en} } @article{PietschBodenthinGrenzeretal.2005, author = {Pietsch, Ullrich and Bodenthin, Yves and Grenzer, J{\"o}rg and Geue, Thomas and M{\"o}hwald, Helmuth and Kurth, Dirk G.}, title = {Structure and temperature behavior of metallo-supramolecular assemblies}, year = {2005}, abstract = {A detailed structural analysis of a Langmuir-Blodgett (LB) multilayer composed of a polyelectrolyte-amphiphile complex (PAC) is presented. The PAC is self-assembled from metal ions, ditopic bis-terpyridines, and amphiphiles. The vertical structure of the LB multilayer is investigated by X-ray reflectometry. The multilayer has a periodicity of 57 A, which corresponds to an architecture of flat lying metallo-supramolecular coordination polyelectrolyte (MEPE) rods and upright-standing amphiphiles (dihexadecyl phosphate, DHP). In-plane diffraction reveals hexagonal packing of the DHP molecules. Using extended X-ray absorption fine structure (EXAFS) experiments, we prove that the central metal ion is coordinated to the terpyridine moieties in a pseudo-octahedral coordination environment. The Fe-N bond distances are 1.82 and 2.0 angstrom, respectively. Temperature resolved measurements indicate a reversible phase transition in a temperature range up to 55 degrees C. EXAFS measurements indicate a lengthening of the average Fe-N bond distance from 1.91 to 1.95 angstrom. The widening of the coordination cage upon heating is expected to lower the ligand field stabilization, thus giving rise to spin transitions in these composite materials}, language = {en} } @article{PietschBodenthinMoehwaldetal.2005, author = {Pietsch, Ullrich and Bodenthin, Yves and M{\"o}hwald, Helmuth and Kurth, Dirk G.}, title = {Inducing spin crossover in metallo-supramolecular polyelectrolytes through an amphiphilic phase transition}, year = {2005}, abstract = {A phase transition in an amphiphilic mesophase is explored to deliberately induce mechanical strain in an assembly of tightly coupled metal ion coordination centers. Melting of the alkyl chains in the amphiphilic mesophase causes distortion of the coordination geometry around the central transition metal ion. As a result, the crystal field splitting of the d-orbital subsets decreases resulting in a spin transition from a low-spin to a high-spin state. The diamagnetic-paramagnetic transition is reversible. This concept is demonstrated in a metallo-supramolecular coordination polyelectrolyte-amphiphile complex self-assembled from ditopic bis-terpyridines, Fe(II) as central transition metal, and dialkyl phosphates as amphiphiles. The magnetic properties are studied in a Langmuir-Blodgett multilayer. The modularity of this concept provides extensive control of structure and function from molecular to macroscopic length scales and gives access to a wide range of new molecular magnetic architectures such as nanostructures, thin films, and liquid crystals}, language = {en} } @article{PietschDarowskiUlyanenkovetal.2000, author = {Pietsch, Ullrich and Darowski, Nora and Ulyanenkov, A. and Grenzer, J{\"o}rg and Wang, K. H. and Forchel, Alfred}, title = {Analysis of the strain distribution in lateral nanostructures for interpreting photoluminescence data}, year = {2000}, language = {en} } @article{PietschDavaasambuuKochinetal.2004, author = {Pietsch, Ullrich and Davaasambuu, Jav and Kochin, V. and Schwarz, K. H. and Blaha, Pawel}, title = {The atomistic origin of the inverse piezoelectric effect in a-quartz}, year = {2004}, abstract = {Ab initio calculations have been carried out using the FP-APW+lo method in order to understand the atomic origin of the inverse piezoelectric effect in x-quartz. The external electric field was modelled by a saw-like potential V-ext in order to achieve translational symmetry within a supercell (SC) containing 72 atoms. The original trigonal quartz structure was repeated along the [110] direction, which corresponds to the direction of the external field. An electric field with 550 kV/mm was applied and the atomic positions of the SC were relaxed until the forces acting on the atoms vanished. In parts of the SC, V-ext changes almost linearly and thus the relaxed atomic positions can be used to determine the structural response due to the external electric field. The calculations provide the piezoelectric modulus of the correct order of magnitude. In contrast to previous models and in agreement with recent experimental results, the atomic origin of the piezoelectric effect can be described by a rotation of slightly deformed SiO4 tetrahedra against each other. The change of the Si-O bond lengths and the tetrahedral O-Si-O angles is one order of magnitude smaller than that of the Si-O-Si angles between neighbouring tetrahedra. The calculated changes of X-ray structure factors are in agreement with experiment when the theoretical data are extrapolated down to the much smaller field strength that is applied in the experiment (E < 10 kV/mm). (C) 2004 Elsevier Ltd. All rights reserved}, language = {en} } @article{PietschDavaasambuuPucheretal.2003, author = {Pietsch, Ullrich and Davaasambuu, Jav and Pucher, Andreas and Kochin, V.}, title = {Atomistic origin of the inverse piezoelectric effect in alpha-SiO2 and alpha-GaPO4}, issn = {0295-5075}, year = {2003}, language = {en} } @article{PietschGeueHennebergetal.2003, author = {Pietsch, Ullrich and Geue, Thomas and Henneberg, Oliver and Saphiannikova, Marina}, title = {X-ray investigations of formation efficiency of buried azobenzene polymer density gratings}, doi = {10.1063/1.1554753}, year = {2003}, language = {en} } @article{PietschGrenzerBischoff2005, author = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Bischoff, Lothar}, title = {Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and An ion beam implantation}, year = {2005}, abstract = {Strain analysis of a laterally patterned Si-wafer was carried out utilizing X-ray grazing-incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 x 10(14) cm(-2)) or 70 keV Ge++ ions (dose: 8 X 10(14) cm(-1)). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (c) 2005 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim}, language = {en} } @article{PietschGrenzerGeueetal.2001, author = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Geue, Thomas and Neißendorfer, Frank and Brezesinski, Gerald and Symietz, Christian and M{\"o}hwald, Helmuth and Gudat, Wolfgang}, title = {The energy dispersive reflectometer at BESSY II : a challenge for thin film analysis}, issn = {0167- 5087}, year = {2001}, language = {en} } @article{PietschGrenzerGrigorianetal.2004, author = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Grigorian, Souren A. and Weyers, Markus and Zeimer, Ute and Feranchuk, S. and Fricke, J. and Kissel, H. and Knauer, A. and Tr{\"a}nkle, G.}, title = {Nanoengineering of lateral strain-modulation in quantum well heterostructures}, year = {2004}, abstract = {We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stressor layer grown on top of a single quantum well which itself is not patterned. The three-dimensional (3D) strain distribution within the lateral nanostructure is calculated using linear elasticity theory applying a finite element technique. Based on the deformation potential approach the calculated strain distribution is translated into a local variation of the band-gap energy. Using a given vertical layer structure we are able to optimize the geometrical parameters to provide a nanostructure with maximum lateral band-gap variation. Experimentally such a structure was realized by etching a surface grating into a tensile-strained InGaP stressor layer grown on top of a compressively strained InGaAs-single quantum well. The achieved 3D strain distribution and the induced band-gap variation are successfully probed by x-ray grazing incidence diffraction and low-temperature photoluminescence measurements, respectively}, language = {en} } @article{PietschGrigorianGrenzeretal.2003, author = {Pietsch, Ullrich and Grigorian, Souren A. and Grenzer, J{\"o}rg and Feranchuk, S. and Zeimer, Ute}, title = {Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures}, year = {2003}, language = {en} } @article{PietschGrigorianGrenzeretal.2003, author = {Pietsch, Ullrich and Grigorian, Souren A. and Grenzer, J{\"o}rg and Vartanyants, Ivan A.}, title = {Thermal diffuse scattering in grazing incidence diffraction}, year = {2003}, language = {en} } @article{PietschGuptaGuptaetal.2004, author = {Pietsch, Ullrich and Gupta, Ajay and Gupta, Mukul and Ayachit, S. and Rajagopalan, S. and Balamurgan, A. K. and Tyagi, A. K.}, title = {Iron self-diffusion in nanocrystalline FeCr thin films}, year = {2004}, abstract = {Thin films of amorphous Fe85Zr15 alloy were deposited by ion-beam sputtering of a composite target. Analogous to the melt-spun amorphous alloys of similar composition, the crystallization of the amorphous film occurs in two steps, however, with a substantially reduced thermal stability. After completion of the first crystallization step which starts at 473 K, the microstructure consists of 12 nm nanocrystals of bcc-Fe embedded in a grain boundary region of the remaining amorphous phase. At 673 K, the remaining amorphous phase transforms into the Fe2Zr alloy. The self-diffusion measurements of iron in the nanocrystalline state and in the parent amorphous state has been carried out using secondary ion mass spectroscopy (SIMS) depth profiling and neutron reflectivity techniques. In contrast to the case of finemet Fe73.5Si13.5B9Nb3Cu1 alloy, where a significant enhancement of diffusivity takes place in the nanocrystalline state, in the present case the diffusivity in the nanocrystalline state is similar to that in the parent amorphous state. It is suggested that in this system the atomic diffusion occurs mainly via the grain boundary regions. The calculated values of the pre-exponential factor and the activation energy for the diffusion are D-0 = 1 x 10(-14+/-1) m(2)/s and E = (0.7 +/- 0.1) eV respectively. (C) 2004 Published by Elsevier B.V.}, language = {en} } @article{PietschGuptaPauletal.2004, author = {Pietsch, Ullrich and Gupta, Amod and Paul, A. and Meneghini, C. and Mibu, K. and Maddalena, S. and Dal Toe, S. and Principi, G.}, title = {Structural characterization of epitaxial Fe/Cr multilayers using anomalous x-ray scattering and neutron reflectivity}, year = {2004}, abstract = {The interface structure of epitaxial Fe/Cr multilayers was studied using anomalous X-ray and neutron reflectivity. The analysis of X-ray reflectivity at three different energies provided a reliable information about the interface roughnesses. It is found that the Cr-on-Fc interface is more diffused as compared to the Fe-on-Cr interface and that the roughness exhibits a significant increase with increasing depth. The magnetic roughness, as determined from neutron reflectivity, is lower than the geometrical roughness, in conformity with the behavior of a number of magnetic thin films and multilayers. (C) 2004 Elsevier B.V. All rights reserved}, language = {en} } @article{PietschHansen1996, author = {Pietsch, Ullrich and Hansen, N. K.}, title = {A critical review of the valence charge density in GaAs}, year = {1996}, language = {en} } @article{PietschHazraChinietal.2004, author = {Pietsch, Ullrich and Hazra, S. and Chini, T. K. and Sanyal, M. K. and Grenzer, J{\"o}rg}, title = {Ripple structure of crystalline layers in ion beam induced Si wafers}, year = {2004}, abstract = {Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved x-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses (similar to7x10(17) ions/cm(2)), starting from initiation at low doses (similar to1x10(17) ions/cm(2)) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID technique reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15\% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple}, language = {en} } @article{PietschHesseZhuangetal.2003, author = {Pietsch, Ullrich and Hesse, A. and Zhuang, Y. and Hol{\´y}, Vaclav and Stangl, Jochen and Zerlauth, S. and Schaffler, F. and Bauer, G{\"u}nther}, title = {X-ray grazing-incidence study of inhomogeneous strain relaxation in Si/SiGe wires}, issn = {0168-583X}, year = {2003}, language = {en} } @article{PietschHolyStroemmeretal.1995, author = {Pietsch, Ullrich and Hol{\´y}, Vaclav and Str{\"o}mmer, R. and Englisch, Uwe}, title = {X-ray and neutron diffuse scattering from multilayers of fatty acid salt molecules}, year = {1995}, language = {en} } @book{PietschHolyBaumbach2004, author = {Pietsch, Ullrich and Hol{\´y}, V{\´a}clav and Baumbach, Tilo}, title = {High resolution X-ray scattering from thin films and lateral nanostructures}, series = {Advanced texts in physics : physics and astronomy online library}, journal = {Advanced texts in physics : physics and astronomy online library}, edition = {2. ed.}, publisher = {Springer}, address = {New York}, isbn = {0-387-40092-3}, pages = {XVI, 408 S. : graph. Darst.}, year = {2004}, language = {en} } @article{PietschJarreSaldittetal.2004, author = {Pietsch, Ullrich and Jarre, A. and Salditt, T. and Panzner, Tobias and Pfeiffer, F.}, title = {White beam x-ray waveguide optics}, year = {2004}, abstract = {We report a white beam x-ray waveguide (WG) experiment. A resonant beam coupler x-ray waveguide (RBC) is used simultaneously as a broad bandpass (or multibandpass) monochromator and as a beam compressor. We show that, depending on the geometrical properties of the WG, the exiting beam consists of a defined number of wavelengths which can be shifted by changing the angle of incidence of the white x-ray synchrotron beam. The characteristic far-field pattern is recorded as a function of exit angle and energy. This x-ray optical setup may be used to enhance the intensity of coherent x-ray WG beams since the full energetic acceptance of the WG mode is transmitted. (C) 2004 American Institute of Physics}, language = {en} } @article{PietschKubowiczThuenemannetal.2003, author = {Pietsch, Ullrich and Kubowicz, Stephan and Th{\"u}nemann, Andreas F. and Geue, Thomas and Watson, M. D. and Tchebotareva, N. and M{\"u}llen, K.}, title = {X-ray reflectivity study of an amphiphilic hex-peri-hexabenzocoronene at a structured silicon wafer surface}, year = {2003}, language = {en} } @article{PietschLeitenbergerWendrocketal.2003, author = {Pietsch, Ullrich and Leitenberger, Wolfram and Wendrock, Horst and Bischoff, Lothar and Panzner, Tobias and Grenzer, J{\"o}rg and Pucher, Andreas}, title = {Double pinhole diffraction of white synchrotron radiation}, year = {2003}, language = {en} } @article{PietschMukhopadhyaySanyaletal.2004, author = {Pietsch, Ullrich and Mukhopadhyay, M. K. and Sanyal, M. K. and Datta, A. and Mukherjee, M. and Geue, Thomas and Grenzer, J{\"o}rg}, title = {Transition from two-dimensional to three-dimensional melting in Langmuir-Blodgett films}, year = {2004}, abstract = {Results of energy-dispersive x-ray reflectivity and grazing incidence diffraction studies of Langmuir-Blodgett films exhibited evolution of conventional three-dimensional melting from continuous melting, characteristic of two- dimensional systems, as a function of deposited monolayers. Continuous expansion followed by a sharp phase transition of the in-plane lattice was observed before the melting point and found to be independent of number of deposited layers. Evolution of conventional melting with an increase in the number of monolayers could be quantified by measuring stiffness against tilting of the vertical stack of molecules, which are kept together by an internal field. The internal field as defined in this model reduces as the in-plane lattice expands and the sample temperature approaches melting point. The sharpness of the melting transition, which has been approximated by a Langevin function, increases with the number of deposited monolayers}, language = {en} } @article{PietschPanznerLeitenbergeretal.2003, author = {Pietsch, Ullrich and Panzner, Tobias and Leitenberger, Wolfram and Grenzer, J{\"o}rg and Bodenthin, Th. and Geue, Thomas and M{\"o}hwald, Helmuth}, title = {Coherence experiments at the energy-dispersive reflectometry beamline at BESSY II}, year = {2003}, language = {en} } @article{PietschPanznerLeitenbergeretal.2005, author = {Pietsch, Ullrich and Panzner, Tobias and Leitenberger, Wolfram and Vartanyants, Ivan A.}, title = {Coherence experiments using white synchrotron radiation}, year = {2005}, abstract = {Experiments at the bending magnet beamline at BESSY II (EDR beamline) profit from the excellent coherence properties of third generation synchrotron sources. Considering the exponentially decaying incident spectrum, and because no optical elements are installed except slits and vacuum windows, coherence experiments can be performed between 5 keV < E < 15 keV. First, the energy dependence of spatial coherence properties were determined measuring diffraction at single and double pinholes. Next, the coherent white radiation was used to probe the morphology of thin films in reflection geometry. The recorded intensity maps (reflectivity versus sample position) provide speckle patterns which reveal the locally varying sample morphology. Setting the incident angle, alpha(i), smaller or larger than the critical angle of total external reflection, alpha(c), one should be able to separate the surface height profile from the subsurface density modulation of a sample. The validity of this approach is verified at the example of reciprocal space maps taken from a polymer surface where we could reconstruct the lateral height profile from speckle data. (C) 2004 Elsevier B.V. All rights reserved}, language = {en} } @article{PietschPanznerLeitenbergeretal.2005, author = {Pietsch, Ullrich and Panzner, Tobias and Leitenberger, Wolfram and Vartanyants, Ivan A.}, title = {Coherence experiments at the EDR-beamline of BESSY II}, year = {2005}, language = {en} } @article{PietschPanznerPfeifferetal.2005, author = {Pietsch, Ullrich and Panzner, Tobias and Pfeiffer, Franz and Robinson, Ian K.}, title = {Substrate morphology repetition in "thick" polymer films}, year = {2005}, abstract = {Using Grazing-incidence small-angle scattering (GISAXS) technique we investigated the surface morphology of polymer films spin-coated on different silicon substrates. As substrates we used either technologically smooth silicon wafers or the same silicon wafer coated with thin aluminium or gold films which show a granular structure at the surface. Although the polymer thickness exceeds 300 nm the GISAXS pattern of the film shows the same in-plane angle distribution Delta2theta as the underlying substrate. Annealing the polymer films at a temperature above its glass transition temperature Delta2theta changed from a broad to a narrow distribution as it is typically for films on pure silicon. The experiment can be interpreted by roughness replication and density fluctuation within the polymer film created while spin-coating at room temperature. Due to the low segment mobility there are density fluctuations which repeat the surface morphology of the substrate. Above the glass temperature the polymer density can be homogenized independently from the morphology of the substrate. (C) 2004 Elsevier B.V. All rights reserved}, language = {en} } @article{PietschRochonNatansohn2000, author = {Pietsch, Ullrich and Rochon, Paul and Natansohn, Almeria}, title = {Formation of a buried lateral density grating in azopenzene polymer films}, year = {2000}, language = {en} } @article{PietschSaphiannikovaHennebergetal.2004, author = {Pietsch, Ullrich and Saphiannikova, Marina and Henneberg, Oliver and Geue, Thomas}, title = {Non-linear effects during inscription of azobenzene surface relief gratings}, year = {2004}, language = {en} } @article{PietschStahnDavaasambuuetal.2001, author = {Pietsch, Ullrich and Stahn, Jochen and Davaasambuu, Jav and Pucher, Andreas}, title = {Electric field induced charge density variations in partially-ionic compounds}, issn = {0022-3697}, year = {2001}, language = {en} } @article{PietschTsirelsonGorfan2003, author = {Pietsch, Ullrich and Tsirelson, Vladimir G. and Gorfan, S. V.}, title = {X-ray scattering amplitude of an atom in a permanent external electric field}, year = {2003}, language = {en} } @article{PietschZeimerGrenzeretal.2003, author = {Pietsch, Ullrich and Zeimer, Ute and Grenzer, J{\"o}rg and Grigorian, Souren A. and Fricke, J. and Gramlich, S. and Bugge, F. and Weyers, Markus and Trankle, G.}, title = {Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs- nanostructures}, year = {2003}, language = {en} } @article{PietschZeimerHofmannetal.2001, author = {Pietsch, Ullrich and Zeimer, Ute and Hofmann, L. and Grenzer, J{\"o}rg and Gramlich, S.}, title = {Strain induced compositional modulations in AlGaAs overlayers induced by lateral surface gratings}, issn = {0272-9172}, year = {2001}, language = {en} } @article{PoloucekPietschGeueetal.2001, author = {Poloucek, P. and Pietsch, Ullrich and Geue, Thomas and Symietz, Christian and Brezesinski, Gerald}, title = {X-ray reflectivity analysis of thin complex Langmuir-Blodgett films}, year = {2001}, language = {en} } @article{ReddyGuptaGomeetal.2009, author = {Reddy, Raghavendra V. and Gupta, Ajay and Gome, Anil and Leitenberger, Wolfram and Pietsch, Ullrich}, title = {In situ x-ray reflectivity and grazing incidence x-ray diffraction study of L1(0) ordering in Fe-57/Pt multilayers}, issn = {0953-8984}, doi = {10.1088/0953-8984/21/18/186002}, year = {2009}, abstract = {In situ high temperature x-ray reflectivity and grazing incidence x-ray diffraction measurements in the energy dispersive mode are used to study the ordered face-centered tetragonal (fct) L1(0) phase formation in [Fe(19 angstrom)/ Pt(25 angstrom)](x10) multilayers prepared by ion beam sputtering. With the in situ x-ray measurements it is observed that (i) the multilayer structure first transforms to a disordered FePt and subsequently to an ordered fct L1(0) phase, (ii) the ordered fct L1(0) FePt peaks start to appear at 320°C annealing, (iii) the activation energy of the interdiffusion is 0.8 eV and (iv) ordered fct FePt grains have preferential out-of-plane texture. The magneto-optical Kerr effect and conversion electron Mossbauer spectroscopies are used to study the magnetic properties of the as- deposited and 400°C annealed multilayers. The magnetic data for the 400°C annealed sample indicate that the magnetization is at an angle of ~50° from the plane of the film.}, language = {en} } @article{ReicheBarberkaJanietzetal.1994, author = {Reiche, J{\"u}rgen and Barberka, Thomas Andreas and Janietz, Dietmar and Hofmann, Dieter and Pietsch, Ullrich and Brehmer, Ludwig}, title = {X-ray structure investigation and computer modelling of Langmuir-Blodgett films formed from disc-shaped pentaalkines}, year = {1994}, language = {en} } @article{ReicheBarberkaKnochenhaueretal.1994, author = {Reiche, J{\"u}rgen and Barberka, Thomas Andreas and Knochenhauer, Gerald and Woolley, Martin and Pietsch, Ullrich}, title = {Comprehensive structure investigation and computer modelling of perfluorododecanoic acid multilayers formed by in-vacuo thermal evaporation}, year = {1994}, language = {en} } @article{ReicheDietzelFreydanketal.1995, author = {Reiche, J{\"u}rgen and Dietzel, Birgit and Freydank, Anke-Christine and Geue, Thomas and Pietsch, Ullrich and Brehmer, Ludwig}, title = {Lateral structure of thermally treated oxadiazole Langmuir-Blodgett films}, year = {1995}, language = {en} } @article{ReicheKnochenhauerBarberkaetal.1995, author = {Reiche, J{\"u}rgen and Knochenhauer, Gerald and Barberka, Thomas Andreas and Geue, Thomas and Pietsch, Ullrich and Brehmer, Ludwig and Hodge, P. and Tredgold, Richard H.}, title = {In-plane structure of perfluorotetra decanoic acid Langmuir-Blodgett films and films formed by vacuum deposition}, year = {1995}, language = {en} } @article{ReicheKnochenhauerDieteletal.1997, author = {Reiche, J{\"u}rgen and Knochenhauer, Gerald and Dietel, Reinhard and Freydank, Anke-Christine and Zetzsche, Thomas and Pietsch, Ullrich and Brehmer, Ludwig and Barberka, Thomas Andreas and Geue, Thomas}, title = {Structure of thermally treated oxadiazoleamide Langmuir-Blodgett films}, year = {1997}, abstract = {The thermal treatment of Y-type Langmuir-Blodgett (LB) films formed from the amphiphilic derivative of 2,5- diphenyl-1,3,4-oxadiazole 1 results in changes of the molecular packing. These changes have been analysed by a combination of X-ray specular reflectivity data, X-ray grazing incidence diffraction data and scanning force microscopy images, On the basis of these experimental data we have simulated possible supramolecular structures, These simulations provide insight into the intermolecular interactions giving rise to the observed structural transitions. The crystalline structure induced by thermal treatment of the LB films is characterized by a uniaxial texture, which is correlated with the dipping direction during deposition of the LB film.}, language = {en} } @article{ReichePenacoradaGeueetal.1995, author = {Reiche, J{\"u}rgen and Penacorada, Florencio and Geue, Thomas and Pietsch, Ullrich and Brehmer, Ludwig}, title = {In-plane structure of uranylarachidate multilayers}, year = {1995}, language = {en} } @article{ReichePenacoradaGeueetal.1997, author = {Reiche, J{\"u}rgen and Penacorada, Florencio and Geue, Thomas and Pietsch, Ullrich and Brehmer, Ludwig}, title = {Monolayers and multilayers of uranyl arachidate : in-plane structure of uranyl arachidate multilayers}, year = {1997}, abstract = {The molecular in-plane structure of uranyl arachidate Langmuir-Blodgett (LB) films formed at different subphase pH values was analysed by means of X-ray grazing-incidence diffraction. For multilayers formed at low subphase pH a reorganisation of the arachidic acid film structure is confirmed. At appropriate subphase pH values, reorganisation of the film structure, e.g. via the formation of three-dimensional crystallites, is prevented by the presence of the uranyl ions and by the subsequent introduction of conformational disorder (gauche defects) in the alkyl chains. The observation of a macroscopic flow-induced in-plane texture in these uranyl arachidate LB films has profound implications for the design of ordered, supramolecular structures by the Langmuir-Blodgett technique.}, language = {en} } @article{ReichePietschFinketal.1992, author = {Reiche, J{\"u}rgen and Pietsch, Ullrich and Fink, Hans-Peter and Lemmetyinen, Helge}, title = {A comparison fo x-ray methods for structure refinement of Langmuir-Blodgett multilayers}, year = {1992}, abstract = {The possibilities and limits of structure refinement of Langmuir-Blodgett films by means of symmetrical reflection of X- rays are described using the example of a stearic acid multilayer. Three different techniques for the determiantion of the electron density profile from reflectivity data are compared; a Fourier method, a Patterson method, and model calculations. The important role of the a priori information for finding the besft structure model is outlined.}, language = {en} } @article{ReinholdGeueHuberetal.2009, author = {Reinhold, Beate and Geue, Thomas and Huber, Patrick and Sant, Tushar and Pietsch, Ullrich and Sztucki, Michael}, title = {In situ and ex situ SAXS investigation of colloidal sedimentation onto laterally patterned support}, issn = {0743-7463}, doi = {10.1021/La803078b}, year = {2009}, abstract = {We report on in situ investigations of colloidal ordering during gravity sedimentation from a colloidal suspension onto a prepatterned support using a polymeric surface relief grating (SRG) as the support. The ordering of colloids with a diameter of 420 nm was investigated by means of grazing-incidence small-angle X-ray scattering (GISAXS) and transmission SAXS using a preparation cell guaranteeing stable temperature and humidity. GISAXS was used for in situ monitoring of the time evolution of colloidal ordering within the whole illuminated sample area. The onset of ordering was indicated by the increase of integrated intensity within a small time frame shortly before complete evaporation of the dispersant. Single domains of coated samples were investigated ex situ by SAXS in transmission geometry where the irradiated sample area was 200 x 200 mu m(2) only. Domains with the typical size of a few millimeters were observed varying in orientation and crystallographic structure for various positions at the sample. They were mainly oriented along the grooves of the grating, confirming the influence of the underlying grating on colloidal ordering.}, language = {en} } @article{RosePietschZeimer1997, author = {Rose, Dirk and Pietsch, Ullrich and Zeimer, Ute}, title = {Characterization of InGaAs single quantum wells buried in GaAs[001] by grazing incidence diffraction}, year = {1997}, language = {en} } @article{SaphiannikovaGeueHennebergetal.2004, author = {Saphiannikova, Marina and Geue, Thomas and Henneberg, Oliver and Morawetz, Knut and Pietsch, Ullrich}, title = {Linear viscoelastic analysis of formation and relaxation of azobenzene polymer gratings}, doi = {10.1063/1.1642606}, year = {2004}, abstract = {Surface relief gratings on azobenzene containing polymer films were prepared under irradiation by actinic light. Finite element modeling of the inscription process was carried out using linear viscoelastic analysis. It was assumed that under illumination the polymer film undergoes considerable plastification, which reduces its original Young's modulus by at least three orders of magnitude. Force densities of about 10(11) N/m(3) were necessary to reproduce the growth of the surface relief grating. It was shown that at large deformations the force of surface tension becomes comparable to the inscription force and therefore plays an essential role in the retardation of the inscription process. In addition to surface profiling the gradual development of an accompanying density grating was predicted for the regime of continuous exposure. Surface grating development under pulselike exposure cannot be explained in the frame of an incompressible fluid model. However, it was easily reproduced using the viscoelastic model with finite compressibility. (C) 2004 American Institute of Physics}, language = {en} }